Na'urar Susceptor na Ganga Mai Rufi ta SiC ta Musamman

Mai hana gangababban sashi ne a cikin hanyoyin haɓakar epitaxial na semiconductor kamar MOCVD, MBE, da CVD. Ana amfani da shi galibi don ɗaukar wafers a cikin ɗakunan amsawa masu zafi da kuma samar da yanayi mai kyau da kwanciyar hankali na filin zafi don tabbatar da daidaiton ajiyar yadudduka na epitaxial (kamar GaN, SiC, da sauransu). Babban aikinsa shine cimma daidaito mai girma na zafin saman wafer ta hanyar sarrafa filin zafi daidai, ta haka ne tabbatar da kauri, yawan shan ƙwayoyi, da kuma daidaiton tsarin lu'ulu'u na fina-finan siririn epitaxial.

Muna amfani da fasaharmu mai lasisi don ƙirƙirarmai cutar da gangatare da tsarki mai matuƙar girma, daidaiton shafi mai kyau da kuma kyakkyawan rayuwar sabis, da kuma juriyar sinadarai masu ƙarfi da kuma yanayin kwanciyar hankali na thermal.

Makamashin VET yana amfani da graphite mai tsarki mai ƙarfi tare da murfin CVD-SiC don haɓaka daidaiton sinadarai:

1. Babban tsarkin kayan graphite
Babban ƙarfin lantarki na zafi: ƙarfin lantarki na graphite ya ninka na silicon sau uku, wanda zai iya canja wurin zafi daga tushen dumama zuwa wafer cikin sauri kuma ya rage lokacin dumama.
Ƙarfin injina: Yawan graphite mai matsin lamba na isostatic ≥ 1.85 g/cm³, yana iya jure yanayin zafi sama da 1200 ℃ ba tare da nakasa ba.

2. Rufin CVD SiC
Ana samar da Layer β-SiC a saman graphite ta hanyar adana tururin sinadarai (CVD), tare da tsarkin ≥ 99.99995%, kuskuren daidaito na kauri na shafi bai wuce ±5% ba, kuma kauri na saman bai wuce Ra0.5um ba.

3. Inganta aiki:
Juriyar Tsatsa: zai iya jure iskar gas mai yawan lalata kamar Cl2, HCl, da sauransu, zai iya tsawaita rayuwar GaN epitaxy sau uku a cikin yanayin NH3.
Kwanciyar hankali: Matsakaicin faɗaɗa zafi (4.5 × 10-6/℃) ya dace da graphite don guje wa tsagewar rufi da canjin yanayin zafi ke haifarwa.
Tauri da Juriyar Sawa: Taurin Vickers ya kai 28 GPa, wanda ya fi graphite sau 10 kuma yana iya rage haɗarin karyewar wafer.