Keɓance SiC Mai Rufaffen Barrel Susceptor

Maganin gangababban sashi ne a cikin matakai na ci gaban semiconductor epitaxial kamar MOCVD, MBE, CVD. Ana amfani da shi galibi don ɗaukar wafers a cikin ɗakuna masu zafi masu zafi da samar da daidaitaccen yanayin filin zafi don tabbatar da daidaitaccen jita-jita na yadudduka na epitaxial (kamar GaN, SiC, da sauransu). Babban aikinsa shi ne cimma daidaituwar yanayin zafin jiki na wafer ta hanyar daidaitaccen sarrafa filin zafi, ta haka ne ke tabbatar da kauri, maida hankali kan doping, da tsarin kristal daidaito na fina-finan bakin ciki na epitaxial.

Muna amfani da fasahar mu ta haƙƙin mallaka don yinmai cutarwa gangatare da tsafta mai mahimmanci, daidaitaccen sutura mai kyau da kuma kyakkyawan rayuwar sabis, kazalika da juriya na sinadarai da kaddarorin kwanciyar hankali na thermal.

VET Energy yana amfani da ginshiƙi mai tsabta tare da CVD-SiC shafi don haɓaka kwanciyar hankali na sinadarai:

1. High tsarki graphite abu
High thermal watsin: da thermal watsin graphite sau uku na silicon, wanda zai iya sauri canja wurin zafi daga dumama tushen zuwa wafer da kuma rage dumama lokaci.
Ƙarfin injina: Ƙarfin ginshiƙi na isostatic ≥ 1.85 g/cm ³, mai iya jure yanayin zafi sama da 1200 ℃ ba tare da nakasawa ba.

2. CVD SiC shafi
A β - SiC Layer aka kafa a saman graphite ta hanyar sinadarai tururi jijiya (CVD), tare da tsarki na ≥ 99.99995%, da uniformity kuskure na shafi kauri ne kasa da ± 5%, da kuma surface roughness ne kasa da Ra0.5um.

3. Inganta ayyuka:
Juriya na lalata: zai iya jure manyan iskar gas kamar Cl2, HCl, da sauransu, na iya tsawaita tsawon rayuwar GaN epitaxy sau uku a cikin yanayin NH3.
Kwanciyar hankali na thermal: Ƙimar haɓakar haɓakar thermal (4.5 × 10-6/℃) ya dace da graphite don guje wa fashewar rufin da ya haifar da canjin zafin jiki.
Tauri da Sawa Juriya: Taurin Vickers ya kai 28GPa, wanda shine sau 10 sama da graphite kuma yana iya rage haɗarin fashewar wafer.