Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorna'urar tallafi da dumama ce da aka tsara musamman don riƙewa da dumama abubuwan semiconductor yayin ayyukan ƙera kamar Tsarin Deposition ko Epitaxy.

Tsarinsa ya ƙunshi siffar silinda ko ɗan ganga, saman yana da aljihuna ko dandamali da yawa don sanya wafers ɗin, ƙirar na iya zama mai ƙarfi ko mara zurfi, ya danganta da hanyar dumama.

Babban aikin mai hana epitaxial barrel:

1. Mai ɗaukar Wafer da Kula da Zafin Jiki
An tsara saman susceptor ɗin da aljihun wafer da yawa (kamar tsarin hexagonal ko octagonal), wanda zai iya ɗaukar wafers 6-15 a lokaci guda. Babban ƙarfin wutar lantarki na graphite mai tsarki (120-150W/mK) yana tabbatar da canja wurin zafi cikin sauri, tare da aikin juyawa (5-20 RPM), wanda ke haifar da karkacewar zafin saman wafer na <± 1 ℃ da daidaiton kauri na epitaxial Layer na <1%.

2. Inganta alkiblar kwararar iskar gas mai amsawa
Tsarin ƙananan sassan saman susceptor na iya karya tasirin layin iyaka, yana ba da damar rarraba iskar gas mai amsawa iri ɗaya (kamar SiH4, NH3) da kuma inganta daidaiton adadin ajiya.

3. Kariyar hana gurɓatawa da kuma hana lalata
Abubuwan da aka yi wa graphite suna da saurin ruɓewa da kuma sakin ƙazanta na ƙarfe (kamar Fe,Ni) a yanayin zafi mai yawa, yayin da murfin CVD SiC mai kauri 100μm zai iya samar da shinge mai yawa don hana graphite volatilization, wanda ke haifar da ƙarancin lahani na wafer na <0.1 lahani/cm².

Aikace-aikace:
- Ana amfani da shi musamman don haɓakar ƙwayoyin cuta na silicon
- Hakanan ya dace da epitaxy na sauran kayan semiconductor kamar GaAs, InP, da sauransu.

Makamashin VET yana amfani da graphite mai tsarki mai ƙarfi tare da murfin CVD-SiC don haɓaka daidaiton sinadarai:

1. Babban tsarkin kayan graphite
Babban ƙarfin lantarki na zafi: ƙarfin lantarki na graphite ya ninka na silicon sau uku, wanda zai iya canja wurin zafi daga tushen dumama zuwa wafer cikin sauri kuma ya rage lokacin dumama.
Ƙarfin injina: Yawan graphite mai matsin lamba na isostatic ≥ 1.85 g/cm³, yana iya jure yanayin zafi sama da 1200 ℃ ba tare da nakasa ba.

2. Rufin CVD SiC
Ana samar da Layer β-SiC a saman graphite ta hanyar adana tururin sinadarai (CVD), tare da tsarkin ≥ 99.99995%, kuskuren daidaito na kauri na shafi bai wuce ±5% ba, kuma kauri na saman bai wuce Ra0.5um ba.

3. Inganta aiki:
Juriyar Tsatsa: zai iya jure iskar gas mai yawan lalata kamar Cl2, HCl, da sauransu, zai iya tsawaita rayuwar GaN epitaxy sau uku a cikin yanayin NH3.
Kwanciyar hankali: Matsakaicin faɗaɗa zafi (4.5 × 10-6/℃) ya dace da graphite don guje wa tsagewar rufi da canjin yanayin zafi ke haifarwa.
Tauri da Juriyar Sawa: Taurin Vickers ya kai 28 GPa, wanda ya fi graphite sau 10 kuma yana iya rage haɗarin karyewar wafer.