Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorgoyan baya da aka ƙera na musamman da na'urar dumama da ake amfani da ita don riƙewa da ɗora matattarar sinadarai yayin ayyukan masana'antu kamar Deposition ko hanyoyin Epitoxy.

Tsarinsa ya haɗa da yawanci silinda ko ɗan ƙaramin ganga mai siffa, saman yana fasalta aljihu da yawa ko dandamali don sanya wafers, na iya zama ƙaƙƙarfan ƙira ko ƙira, ya danganta da hanyar dumama.

Babban ayyuka na mai ciwon ganga na epitaxial:

1. Mai ɗaukar Wafer da Kula da Zazzabi
An ƙera saman mai ɗaukar hoto tare da aljihunan wafer da yawa (kamar tsarin hexagonal ko octagonal), wanda zai iya tallafawa wafers 6-15 lokaci guda. Babban thermal conductivity na high-tsarki graphite (120-150W / mK) yana tabbatar da saurin canja wurin zafi, haɗe tare da aikin juyawa (5-20 RPM), wanda ke haifar da karkacewar yanayin zafin jiki na <± 1 ℃ da epitaxial Layer kauri uniformity na <1%.

2. Inganta reactant gas kwarara shugabanci
Tsarin microstructure na farfajiyar mai susceptor na iya karya tasirin layin iyaka, yana ba da izinin rarraba iskar gas iri ɗaya (kamar SiH4, NH3) da haɓaka daidaiton ƙimar ajiya.

3. Anti gurbacewa da kariya daga lalata
Matsalolin graphite suna da saurin lalacewa da sakin ƙazantattun ƙarfe (kamar Fe, Ni) a yanayin zafi mai girma, yayin da murfin CVD SiC mai kauri na 100μm zai iya samar da shinge mai yawa don murkushe graphite volatilization, yana haifar da ƙarancin lahani na <0.1 lahani / cm ².

Aikace-aikace:
-Ana amfani da shi don haɓakar haɓakar silicon epitaxial
- Hakanan ana amfani da shi don epitaxy na sauran kayan semiconductor kamar GaAs, InP, da sauransu.

VET Energy yana amfani da ginshiƙi mai tsabta tare da CVD-SiC shafi don haɓaka kwanciyar hankali na sinadarai:

1. High tsarki graphite abu
High thermal watsin: da thermal watsin graphite sau uku na silicon, wanda zai iya sauri canja wurin zafi daga dumama tushen zuwa wafer da kuma rage dumama lokaci.
Ƙarfin injina: Ƙarfin ginshiƙi na isostatic ≥ 1.85 g/cm ³, mai iya jure yanayin zafi sama da 1200 ℃ ba tare da nakasawa ba.

2. CVD SiC shafi
A β - SiC Layer aka kafa a saman graphite ta hanyar sinadarai tururi jijiya (CVD), tare da tsarki na ≥ 99.99995%, da uniformity kuskure na shafi kauri ne kasa da ± 5%, da kuma surface roughness ne kasa da Ra0.5um.

3. Inganta ayyuka:
Juriya na lalata: zai iya jure manyan iskar gas kamar Cl2, HCl, da sauransu, na iya tsawaita tsawon rayuwar GaN epitaxy sau uku a cikin yanayin NH3.
Kwanciyar hankali na thermal: Ƙimar haɓakar haɓakar thermal (4.5 × 10-6/℃) ya dace da graphite don guje wa fashewar rufin da ya haifar da canjin zafin jiki.
Tauri da Sawa Juriya: Taurin Vickers ya kai 28GPa, wanda shine sau 10 sama da graphite kuma yana iya rage haɗarin fashewar wafer.