Rufin SiC/Rufin Graphite Mai Rufi/Tere don Semiconductor

SiC Rufi/Graphite Substrate/Tre don Semiconductor Hoton da aka Fito

Takaitaccen Bayani:

Maganin Gaske Mai Rufi na VET Energy SiC don Ci gaban Epitaxial samfuri ne mai inganci wanda aka ƙera don samar da aiki mai dorewa da aminci na tsawon lokaci. Yana da juriyar zafi mai kyau da daidaiton zafi, tsarki mai yawa, juriyar zaizayar ƙasa, wanda hakan ya sa ya zama mafita mafi kyau ga aikace-aikacen sarrafa wafer.

Aika mana imel Sauke shi azaman PDF

Cikakken Bayani game da Samfurin

Alamun Samfura

Rufin SiC/mai rufi da sinadarin graphite don semiconductor

TheSubstrate Graphite Mai Rufi na SiCmafita ce mai ɗorewa kuma mai inganci wacce aka tsara don biyan buƙatun masana'antar sarrafa semiconductor mai tsauri. Yana da tsari mai tsabta sosai.shafi na silicon carbide (SiC)Wannan substrate yana ba da kwanciyar hankali na zafi mai kyau, juriya ga iskar shaka, da tsawon rai na sabis, wanda hakan ya sa ya dace da amfani a cikin hanyoyin MOCVD, masu ɗaukar wafer na graphite, da sauran yanayin zafi mai yawa.

Siffofi:
· Kyakkyawan Juriyar Girgizar Zafi
· Kyakkyawan Juriyar Girgiza ta Jiki
· Kyakkyawan juriya ga sinadarai
· Tsarkakakken Tsarkakakke
· Samuwa a Siffa Mai Hadari
· Ana iya amfani da shi a ƙarƙashin Yanayi Mai Haɗakarwa

Aikace-aikace:

Siffofin Samfura da Fa'idodi:

1. Mafi kyawun Juriya ga Zafin Jiki:Tare da tsarki mai girmaShafi na SiC, substrate yana jure yanayin zafi mai tsanani, yana tabbatar da aiki mai dorewa a cikin yanayi masu wahala kamar ƙirƙirar epitaxy da semiconductor.

2. Ingantaccen Dorewa:An ƙera sassan graphite mai rufi na SiC don tsayayya da lalata sinadarai da iskar shaka, wanda ke ƙara tsawon rayuwar substrate idan aka kwatanta da substrates na graphite na yau da kullun.

3. Graphite Mai Rufi Mai Vitreous:Tsarin vitreous na musamman naShafi na SiCyana ba da kyakkyawan taurin saman, yana rage lalacewa da tsagewa yayin sarrafa zafi mai yawa.

4. Shafi Mai Tsarkakakken SiC:Tsarinmu yana tabbatar da ƙarancin gurɓatawa a cikin hanyoyin samar da sinadarai masu mahimmanci, yana ba da aminci ga masana'antu waɗanda ke buƙatar tsaftar abu mai tsauri.

5. Aikace-aikacen Kasuwa Mai Faɗi:TheMai hana graphite mai rufi na SiCKasuwa tana ci gaba da girma yayin da buƙatar samfuran SiC masu rufi na ci gaba a masana'antar semiconductor ke ƙaruwa, yana sanya wannan substrate a matsayin babban ɗan wasa a cikin kasuwar ɗaukar kaya ta graphite wafer da kasuwar tiren graphite mai rufi da silicon carbide.

Al'adar Kayan Graphite na Tushe:

Yawa Mai Bayyana:	1.85 g/cm3
Juriyar Lantarki:	11 μΩm
Ƙarfin Lankwasawa:	49 MPa (500kgf/cm2)
Taurin bakin teku:	58
Toka:	<5ppm
Tsarin kwararar zafi:	116 W/mK (100 kcal/mhr-℃)

CVD SiC薄膜基本物理性能 Abubuwan asali na zahiri na CVD SiCshafi
性质 / Dukiya	典型数值 / Ƙimar Taimako
晶体结构 / Crystal Structure	FCC β lokaci 多晶，主要为（111）取向
密度 / Yawan yawa	3.21 g/cm³
硬度 / Hardness	2500 维氏硬度 (500g kaya)
晶粒大小 / Hatsi SiZe	2 ~ 10μm
纯度 / Sinadaran Tsabta	99.99995%
热容 / Ƙarfin Zafi	640 J·kg^-1·K^-1
升华温度 / Sublimation Temperature	2700℃
抗弯强度 / Ƙarfin Ƙarfi	415 MPa RT maki 4
杨氏模量 / Matasa's Modul	430 GPA lanƙwasa 4pt, 1300℃
导热系数 / Thermal Conductivity	300W·m^-1·K^-1
热膨胀系数 / Thermal Expansion(CTE)	4.5×10^-6K^-1

VET Energy ita ce ainihin masana'antar samfuran graphite da silicon carbide na musamman tare da rufin daban-daban kamar murfin SiC, murfin TaC, murfin carbon mai gilashi, murfin carbon pyrolytic, da sauransu, wanda zai iya samar da sassa daban-daban na musamman don masana'antar semiconductor da photovoltaic.

Ƙungiyarmu ta fasaha ta fito ne daga manyan cibiyoyin bincike na cikin gida, waɗanda za su iya samar muku da ƙarin mafita na kayan aiki na ƙwararru.

Muna ci gaba da haɓaka hanyoyin ci gaba don samar da kayan aiki masu inganci, kuma mun yi amfani da fasahar mallakar fasaha ta musamman, wadda za ta iya sa haɗin da ke tsakanin murfin da substrate ya yi ƙarfi kuma ya zama ba shi da sauƙin rabuwa.

Barka da zuwa ka ziyarci masana'antarmu, bari mu ci gaba da tattaunawa!