Dahaarka SiC/Graphite Substrate/Saxan loogu talagalay Semiconductor

Sharaxaad Gaaban:

Susceptor-ka VET Energy SiC ee Dahaaran ee Graphite-ka ee Kobaca Epitaxial waa badeeco waxqabad sare leh oo loogu talagalay inay bixiso waxqabad joogto ah oo la isku halleyn karo muddo dheer. Waxay leedahay iska caabin kulayl oo aad u wanaagsan iyo isku mid ahaanshaha kulaylka, daahirnimo sare, iska caabin nabaad-guur, taasoo ka dhigaysa xalka ugu habboon ee codsiyada habaynta wafer-ka.

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Faahfaahinta Badeecada

Calaamadaha Alaabta

Dahaarka SiC/dahaarka leh ee sumowga garaafka ee loogu talagalay Semiconductor

TheSubstrate Graphite oo SiC ah oo dahaaranwaa xal aad u waara oo hufan oo loogu talagalay inuu daboolo baahiyaha adag ee warshadaha wax soo saarka semiconductor-ka. Iyada oo leh lakab nadiifin sare leh.dahaarka silikoon carbide (SiC), substrate-kani wuxuu bixiyaa xasillooni kuleyl oo heer sare ah, iska caabin oksaydh, iyo cimri dheer oo adeeg ah, taasoo ka dhigaysa mid ku habboon codsiyada hababka MOCVD, sidayaasha wafer-ka graphite, iyo deegaanno kale oo heerkul sare leh.

Astaamaha:
· Iska caabinta Shoogga Kulaylka oo Aad u Fiican
· Iska caabinta Shoogga Jirka ee aadka u Fiican
· Iska caabinta Kiimikada ee aadka u Fiican
· Nadiifin Sare oo Aad u Sareysa
· Helitaanka qaab adag
· Lagu isticmaali karo jawiga oksaydhaynta

Codsiga:

Astaamaha iyo Faa'iidooyinka Badeecada:

1. Iska caabinta Kulaylka Sare:Iyada oo leh daahirnimo sareDahaarka SiC, substrate-ku wuxuu u adkeysan karaa heerkulka xad-dhaafka ah, isagoo hubinaya waxqabad joogto ah oo ka jira jawiyo adag sida sameynta epitaxy iyo semiconductor.

2. Waara oo La Xoojiyay:Qaybaha garaafitka ee dahaarka leh ee SiC waxaa loogu talagalay inay iska caabiyaan daxalka kiimikada iyo oksaydhka, taasoo kordhinaysa cimriga substrate-ka marka loo eego substrate-ka caadiga ah ee garaafitka.

3. Garaafit Dahaarka leh oo Vitreous ah:Qaab-dhismeedka vitreous-ka gaarka ah eeDahaarka SiCwaxay bixisaa adkeysi dusha sare oo aad u fiican, iyadoo yareyneysa xirashada iyo jeexitaanka inta lagu jiro habaynta heerkulka sare.

4. Dahaarka SiC ee Nadiifka Sare:Substrate-kayagu wuxuu hubiyaa wasakhowga ugu yar ee hababka semiconductor-ka xasaasiga ah, isagoo siinaya isku hallayn warshadaha u baahan daahirnimo agab oo adag.

5. Codsiga Suuqa Ballaaran:TheSusceptor-ka graphite-ka ee dahaarka leh ee SiCSuuqu wuu sii kordhayaa iyadoo baahida loo qabo alaabada dahaarka leh ee SiC ee horumarsan ee wax soo saarka semiconductor-ka ay sii kordhayso, taasoo ka dhigaysa substrate-kan mid muhiim u ah suuqa side-ka wafer-ka graphite iyo suuqa saxamada graphite-ka ee silicon carbide-ka lagu dahaadhay.

Sifooyinka Caadiga ah ee Walxaha Garaafiga Saldhigga ah:

Cufnaanta Muuqda:	1.85 g/cm3
Iska caabinta Korontada:	11 μΩm
Xoogga Laab-jeexa:	49 MPa (500kgf/cm2)
Adkaanta Xeebta:	58
Dambas:	<5ppm
Qaboojinta Kulaylka:	116 W/mK (100 kcal/mhr-℃)

CVD SiC薄膜基本物理性能 Sifooyinka aasaasiga ah ee jireed ee CVD SiCdahaarka
性质 / Hanti	典型数值 / Qiimaha Caadiga ah
晶体结构 / Crystal Structure	FCC β wajiga 多晶，主要为（111）取向
密度 / Cufnaanta	3.21 g/cm³
硬度 / Adag	2500 维氏硬度（500g oo culeys ah
晶粒大小 / Hadhuudhka SiZe	2 ~ 10μm
纯度 / Nadiifnimada Kiimikada	99.99995%
热容 / Awoodda kulaylka	640 J·kg^-1·K^-1
升华温度 / Heerkulka Sublimation	2700℃
抗弯强度 / Xoog Jilicsan	415 MPa RT 4-dhibcood
杨氏模量 / Da'yarta Modulus	430 GPA 4pt laab, 1300℃
导热系数 / Habdhaqanka kulaylka	300W·m^-1·K^-1
热膨胀系数 / Balaadhinta kulaylka(CTE)	4.5 × 10^-6K^-1

VET Energy waa soo saaraha dhabta ah ee alaabada graphite iyo silicon carbide ee loo habeeyay oo leh dahaadh kala duwan sida dahaarka SiC, dahaarka TaC, dahaarka kaarboonka galaaska ah, dahaarka kaarboonka pyrolytic, iwm., waxay bixin kartaa qaybo kala duwan oo loogu talagalay warshadaha semiconductor-ka iyo photovoltaic.

Kooxdayada farsamada waxay ka timaadaa hay'adaha cilmi-baarista ee ugu sarreeya gudaha, waxayna ku siin karaan xalal agab xirfadeed oo dheeraad ah.

Waxaan si joogto ah u horumarinnaa habab horumarsan si aan u bixinno agab horumarsan, waxaana ka shaqeynay tignoolajiyad gaar ah oo shati leh, taas oo ka dhigi karta isku xirka u dhexeeya dahaarka iyo substrate-ka mid adag oo aan u nuglaan kala go'a.

Si diirran ayaan kuugu soo dhaweyneynaa inaad booqato warshaddayada, aan yeelano dood dheeraad ah!