I-SiC Coating/Coated Graphite Substrate/Tray ye-Semiconductor

Inkcazo emfutshane:

I-VET Energy SiC Coated Graphite Susceptor ye-Epitaxial Growth yimveliso esebenza kakuhle kakhulu eyenzelwe ukubonelela ngokusebenza okuzinzileyo nokuthembekileyo kwixesha elide. Inokumelana okuhle kakhulu nobushushu kunye nokufana kobushushu, ubunyulu obuphezulu, ukumelana nokukhukuliseka, nto leyo eyenza ukuba ibe sisisombululo esifanelekileyo sokusetyenziswa kwe-wafer.

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I-SiC coating/coated ye-Graphite susceptor ye-Semiconductor

II-SiC Coated Graphite Substratesisisombululo esihlala ixesha elide nesisebenzayo esenzelwe ukuhlangabezana neemfuno ezingqongqo zoshishino lokucubungula ii-semiconductor. Sinomaleko wobunyulu obuphezului-silicon carbide (SiC) yokwaleka, le substrate inika uzinzo olukhethekileyo lobushushu, ukumelana ne-oxidation, kunye nobomi benkonzo obude, okwenza ukuba ilungele ukusetyenziswa kwiinkqubo ze-MOCVD, ii-graphite wafer carriers, kunye nezinye iindawo ezinobushushu obuphezulu.

Iimbonakalo:
· Ukumelana kakuhle nobushushu
· Ukumelana kakuhle nomothuko womzimba
· Ukumelana kakuhle kweekhemikhali
· Ucoceko Oluphezulu Kakhulu
· Ukufumaneka kwiMilo eNcinci
·Ingasetyenziswa phantsi kwe-Oxidizing Atmosphere

Isicelo:

Iimpawu zeMveliso kunye neeNzuzo:

1. Ukumelana okuphezulu kobushushu:Ngobunyulu obuphezuluUkwaleka kweSiC, i-substrate iyakwazi ukumelana namaqondo obushushu aphezulu, iqinisekisa ukusebenza rhoqo kwiindawo ezifuna amandla afana ne-epitaxy kunye nokuveliswa kwe-semiconductor.

2. Ukuqina Okuphuculweyo:Izixhobo zegrafiti ezigqunywe yiSiC zenzelwe ukumelana nokugqwala kweekhemikhali kunye ne-oxidation, nto leyo eyandisa ubomi be-substrate xa ithelekiswa ne-substrates zegrafiti eziqhelekileyo.

3. I-Graphite Egqunywe Nge-Vitreous:Ulwakhiwo olukhethekileyo lwe-vitreousUkwaleka kweSiCinika ubulukhuni obubalaseleyo bomphezulu, inciphisa ukuguguleka ngexesha lokucubungula amaqondo obushushu aphezulu.

4. Ukwaleka kwe-SiC ecocekileyo kakhulu:Isiseko sethu siqinisekisa ungcoliseko oluncinci kwiinkqubo ze-semiconductor ezinobuthathaka, nto leyo enika ukuthembeka kumashishini afuna ubumsulwa obuqinileyo bezinto.

5. Isicelo seMarike ebanzi:II-SiC egqunywe yi-graphite susceptorImarike iyaqhubeka nokukhula njengoko imfuno yeemveliso ezigqunywe yiSiC eziphucukileyo kwimveliso ye-semiconductor isanda, nto leyo ebeka le substrate njengomdlali ophambili kwimarike yokuthwala i-graphite wafer kunye nemarike yeetreyi ze-graphite ezigqunywe yisilicon carbide.

Iimpawu eziqhelekileyo zezinto ezisisiseko zeGraphite:

Ubuninzi Obubonakalayo:	1.85 g/cm3
Ukumelana nombane:	11 μΩm
Amandla okuGuquka:	I-49 MPa (500kgf/cm2)
Ukuqina koLwandle:	58
Uthuthu:	<5ppm
Ukuqhuba kwe-Thermal:	116 W/mK (100 kcal/mhr-℃)

I-CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko zomzimba ze-CVD SiCugqubuthelo
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
晶体结构 / Crystal Structure	FCC β isigaba 多晶，主要為(111）取向)
密度 / Ubuninzi	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Grain SiZe	2 ~ 10μm
纯度 / Ucoceko lweMichiza	99.99995%
热容 / Umthamo wobushushu	640 J·kg^-1·K^-1
升华温度 / Ubushushu bokunciphisa	2700℃
抗弯强度 / Amandla e-Flexural	I-415 MPa RT 4-point
杨氏模量 / Young's Modulus	I-430 Gpa 4pt bend, 1300℃
导热系数 / Thermal Conductivity	300W·m^-1·K^-1
热膨胀系数 / Ukwandiswa kweThermal(CTE)	4.5×10^-6K^-1

I-VET Energy ngumvelisi wokwenyani weemveliso zegrafiti kunye ne-silicon carbide ezenzelwe wena kunye neengubo ezahlukeneyo ezifana ne-SiC coating, i-TaC coating, i-glassy carbon coating, i-pyrolytic carbon coating, njl.njl., inokubonelela ngeendawo ezahlukeneyo ezenzelwe wena kwishishini le-semiconductor kunye ne-photovoltaic.

Iqela lethu lobuchwephesha livela kumaziko ophando aphambili asekhaya, linokubonelela ngezisombululo zezinto zobungcali ngakumbi kuwe.

Sihlala siphuhlisa iinkqubo eziphambili ukuze sinikezele ngezixhobo eziphucukileyo, kwaye sisebenze ubuchwepheshe obukhethekileyo obunelungelo lobunikazi, obunokwenza ukubopha phakathi kwengubo kunye nesiseko kube nzima kwaye kungabi lula ukwahlukana.

Wamkelekile ngobubele ukuba undwendwele umzi-mveliso wethu, makhe sixoxe ngakumbi!