ʻO ka SiC Coating/Coated Graphite Substrate/Tray no ka Semiconductor

ʻO ke kiʻi i hōʻike ʻia ʻo SiC Coating/Coated Graphite Substrate/Tray no ka Semiconductor

Wehewehe Pōkole:

ʻO ka VET Energy SiC Coated Graphite Susceptor no ka Epitaxial Growth he huahana hana kiʻekiʻe i hoʻolālā ʻia e hāʻawi i ka hana kūlike a hilinaʻi hoʻi i kahi manawa lōʻihi. Loaʻa iā ia ke kūpaʻa wela maikaʻi loa a me ke kūlike wela, ka maʻemaʻe kiʻekiʻe, ke kūpaʻa i ka ʻino, e lilo ia i hopena kūpono no nā noi hana wafer.

E leka uila mai iā mākou Hoʻoiho ma ke ʻano he PDF

Nā kikoʻī huahana

Nā Lepili Huahana

ʻO ka uhi ʻana/uhi ʻia ʻo SiC o ka mea hoʻopili Graphite no Semiconductor

ʻO kaʻO ka SiC Coated Graphite Substratehe hopena paʻa loa a kūpono hoʻi i hoʻolālā ʻia e hoʻokō i nā koi koʻikoʻi o ka ʻoihana hana semiconductor. Hōʻike ʻia kahi papa o ka maʻemaʻe kiʻekiʻeuhi ʻana o ka silicon carbide (SiC), hāʻawi kēia substrate i ke kūpaʻa wela kūikawā, ke kūpaʻa oxidation, a me ke ola lawelawe lōʻihi, e kūpono ana no nā noi ma nā kaʻina hana MOCVD, nā mea lawe wafer graphite, a me nā wahi wela kiʻekiʻe ʻē aʻe.

Nā Hiʻohiʻona:
· Kū'ē Kū'ē Wela Maika'i Loa
· Kū'ē Kū'ē Kino Maika'i Loa
· Kū'ē Kemika Maikaʻi Loa
· Maʻemaʻe Kiʻekiʻe Loa
· Loaʻa i ke ʻano paʻakikī
· Hiki ke hoʻohana ʻia ma lalo o ka Oxidizing Atmosphere

Noi：

Nā Hiʻohiʻona Huahana a me nā Pono:

1. Ke kūpaʻa wela kiʻekiʻe:Me ka maʻemaʻe kiʻekiʻeUhi ʻana SiC, kū ka substrate i nā mahana koʻikoʻi, e hōʻoiaʻiʻo ana i ka hana mau i nā wahi koi e like me ka epitaxy a me ka hana semiconductor.

2. Hoʻonui ʻia ke kūpaʻa:Ua hoʻolālā ʻia nā ʻāpana graphite i uhi ʻia me SiC e pale aku i ka pala kemika a me ka oxidation, e hoʻonui ana i ke ola o ka substrate i hoʻohālikelike ʻia me nā substrates graphite maʻamau.

3. Graphite i uhi ʻia me ka vitreous:ʻO ke ʻano vitreous kū hoʻokahi o kaUhi ʻana SiChāʻawi i ka paʻakikī o ka ʻili maikaʻi loa, e hoʻemi ana i ke komo a me ka waimaka i ka wā o ka hana ʻana i ka mahana kiʻekiʻe.

4. Uhi SiC Maʻemaʻe Kiʻekiʻe:Hoʻomaopopo kā mākou substrate i ka liʻiliʻi o ka haumia i nā kaʻina hana semiconductor koʻikoʻi, e hāʻawi ana i ka hilinaʻi no nā ʻoihana e pono ai ka maʻemaʻe o nā mea.

5. Hoʻohana mākeke ākea:ʻO kaʻO ka mea hoʻopaʻa graphite i uhi ʻia me SiCKe hoʻomau nei ka mākeke e ulu i ka piʻi ʻana o ke koi no nā huahana SiC i uhi ʻia i ka hana semiconductor, e hoʻonoho ana i kēia substrate ma ke ʻano he mea pāʻani koʻikoʻi ma ka mākeke lawe wafer graphite a me ka mākeke pā graphite i uhi ʻia me ka silicon carbide.

Nā Waiwai Maʻamau o ka Mea Graphite Base:

Ka nui o ka ʻike ʻia:	1.85 g/cm3
Ke kū'ē uila:	11 μΩm
Ikaika Flexural:	49 MPa (500kgf/cm2)
Paʻakikī Kahakai:	58
Lehu:	<5ppm
Ka Hoʻokele Wela:	116 W/mK (100 kcal/mhr-℃)

CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCuhi ʻana
性质 / Waiwai	典型数值 / Waiwai maʻamau
晶体结构 / Kahua Crystal	FCC β phase 多晶，主要为（111）取向
密度 / Density	3.21 g/cm³
硬度 / Paʻakiki	2500 维氏硬度（500g load）
晶粒大小 / Grain SiZe	2~10μm
纯度 / Maʻemaʻe Kemika	99.99995%
热容 / Kaha Wela	640 J·kg^-1·K^-1
升华温度 / Kaumaha Sublimation	2700℃
抗弯强度 / Ikaika Flexural	415 MPa RT 4-kiko
杨氏模量 / Young's Modulus	430 Gpa 4pt kūlou, 1300 ℃
导热系数 / Hoʻokaʻawale wela	300W·m^-1·K^-1
热膨胀系数 / Hoʻonui Thermal(CTE)	4.5×10^-6K^-1

ʻO VET Energy ka mea hana maoli o nā huahana graphite a me silicon carbide i hoʻopilikino ʻia me nā uhi like ʻole e like me ka uhi ʻana o SiC, ka uhi ʻana o TaC, ka uhi ʻana o ke kalapona aniani, ka uhi ʻana o ke kalapona pyrolytic, a me nā mea ʻē aʻe, hiki ke hoʻolako i nā ʻāpana like ʻole no ka ʻoihana semiconductor a me ka photovoltaic.

Loaʻa kā mākou hui loea mai nā ʻoihana noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā hoʻonā mea ʻoihana hou aku nāu.

Ke hoʻomau nei mākou i ka hoʻomohala ʻana i nā kaʻina hana holomua e hoʻolako i nā mea holomua hou aʻe, a ua hana i kahi ʻenehana i hoʻopaʻa ʻia, hiki ke hoʻopaʻa i ka pilina ma waena o ka uhi a me ka substrate a emi iki ka maʻalahi o ka hemo ʻana.

Ke hoʻokipa maikaʻi nei iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou aku kākou!