SiC Coating/Coated Graphite Substrate/Tray yeSemiconductor

Tsananguro pfupi:

VET Energy SiC Coated Graphite Susceptor yeEpitaxial Growth chigadzirwa chine simba guru chakagadzirirwa kupa mashandiro akasimba uye akavimbika kwenguva yakareba. Chine simba rakanaka kwazvo rekudzivirira kupisa uye kufanana kwekupisa, kuchena kwakanyanya, uye kuramba kukurwa kwevhu, zvichiita kuti ive mhinduro yakakwana yekugadzirisa wafer.


Ruzivo rweChigadzirwa

Matagi eChigadzirwa

SiC coating/coated yeGraphite susceptor yeSemiconductor
 
IyoSiC Coated Graphite Substratemhinduro yakasimba uye inoshanda zvakanaka yakagadzirirwa kusangana nezvinodiwa zvakanyanya neindasitiri yekugadzirisa semiconductor. Ine jira rekuchena kwakanyanyasilicon carbide (SiC) coating, substrate iyi inopa kugadzikana kwakanyanya kwekupisa, kuramba kuoxidation, uye hupenyu hwebasa hurefu, zvichiita kuti ive yakakodzera kushandiswa muMOCVD processes, graphite wafer carriers, nedzimwe nzvimbo dzinopisa zvakanyanya.

 Zvimiro: 
· Kudzivirira Kupisa Kwakanaka
· Kudzivirira Kuvhunduka Kwemuviri Kwakanaka
· Kurwisa Makemikoro Zvakanaka
· Kuchena Kwakanyanya
· Kuwanikwa muchimiro chakaoma
· Inoshandiswa pasi peOxidizing Atmosphere

Kushanda:

3

Zvimiro zveChigadzirwa uye Mabhenefiti:

1. Kuramba Kunopisa Kwakanyanya:Nekuchena kwakanyanyaSiC coating, substrate inotsungirira tembiricha yakanyanya, ichivimbisa kushanda kwakasimba munzvimbo dzinoda simba dzakadai se epitaxy uye semiconductor manufactures.

2. Kugara Kwakasimba:Zvikamu zvegrafiti zvakaputirwa neSiC zvakagadzirirwa kudzivirira ngura yemakemikari uye oxidation, zvichiwedzera hupenyu hwesubstrate kana tichienzanisa negrafiti dzakajairwa.

3. Graphite Yakaputirwa neVitreous:Maumbirwo akasiyana e vitreous eSiC coatinginopa kuomarara kwepamusoro, zvichideredza kusakara panguva yekugadzirisa kupisa kwakanyanya.

4. Kuputira kweSiC Yakachena Kwazvo:Substrate yedu inoita kuti pave nekusvibiswa kushoma mumabasa e semiconductor anonyanya kunzwisisika, zvichipa kuvimbika kumaindasitiri anoda kuchena kwakasimba kwezvinhu.

5. Kushandiswa kweMusika Wakakura:IyoSiC yakafukidzwa negraphite susceptorMusika unoramba uchikura sezvo kudiwa kwezvigadzirwa zvemhando yepamusoro zveSiC zvakaputirwa mukugadzira semiconductor kuri kuwedzera, zvichiita kuti substrate iyi ive chinhu chakakosha mumusika wekutakura graphite wafer pamwe nemusika we silicon carbide coated graphite trays.

Hunhu Hwakajairika hweBase Graphite Material:

Kuwanda Kunoonekwa: 1.85 g/cm3
Kuramba kweMagetsi: 11 μΩm
Simba reFlexural: 49 MPa (500kgf/cm2)
Kuoma kweGungwa: 58
Dota: <5ppm
Kufambisa kwekupisa: 116 W/mK (100 kcal/mhr-℃)

 

CVD SiC薄膜基本物理性能

Hunhu hweCVD SiCkuputira

性质 / Property

典型数值 / Typical Value

晶体结构 / Crystal Structure

FCC β phase 多晶,主要為(111)取向)

密度 / Density

3.21 g/cm³

硬度 / Kuoma

2500 维氏硬度 (500g mutoro)

晶粒大小 / Grain SiZe

2 ~ 10μm

纯度 / Chemical Purity

99.99995%

热容 / Heat Capacity

640 J·kg-1·K-1

升华温度 / Sublimation Temperature

2700℃

抗弯强度 / Flexural Strength

415 MPa RT ine mapoinzi mana

杨氏模量 / Young's Modulus

430 Gpa 4pt bend, 1300℃

导热系数 / Thermal Conductivity

300W·m-1·K-1

热膨胀系数 / Thermal Expansion(CTE)

4.5×10-6K-1

1

2

 

 

VET Energy ndiyo kambani chaiyo inogadzira zvigadzirwa zve graphite ne silicon carbide zvakagadzirwa ne SiC coating, TaC coating, glassy carbon coating, pyrolytic carbon coating, nezvimwewo, inogona kupa zvikamu zvakasiyana-siyana zvakagadzirwa ne semiconductor ne photovoltaic industry.

Chikwata chedu chehunyanzvi chinobva kumasangano makuru ekutsvagisa emuno, chinogona kukupa mhinduro dzehunyanzvi.

Tinogara tichigadzira maitiro epamusoro-soro kuti tipe zvinhu zvepamusoro-soro, uye takagadzira tekinoroji yakasarudzika ine patent, iyo inogona kuita kuti kubatana pakati pe coating ne substrate kuve kwakasimba uye kusanyanya kupatsanurwa.

Tinokugamuchirai neushamwari kuti mushanyire fekitori yedu, ngatikurukurei zvakawanda!

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