Mawonekedwe:
· Kukana Kwambiri Kutentha ndi Kugwedezeka
· Kulimbana Kwambiri ndi Kugwedezeka Kwathupi
· Kukana Mankhwala Kwambiri
· Chiyero Chapamwamba Kwambiri
· Kupezeka mu mawonekedwe ovuta
· Ingagwiritsidwe ntchito pansi pa mpweya woipa
Ntchito:
Zinthu ndi Ubwino wa Zamalonda:
1. Kukana Kwambiri Kutentha:Ndi chiyero chapamwambaChophimba cha SiC, gawo lapansi limapirira kutentha kwambiri, kuonetsetsa kuti likugwira ntchito bwino m'malo ovuta monga epitaxy ndi semiconductor.
2. Kulimba Kwambiri:Zigawo za graphite zophimbidwa ndi SiC zimapangidwa kuti zisawonongeke ndi mankhwala komanso kusungunuka kwa okosijeni, zomwe zimawonjezera moyo wa substrate poyerekeza ndi substrates wamba za graphite.
3. Graphite Yokutidwa ndi Vitreous:Kapangidwe kapadera ka vitreous kaChophimba cha SiCimapereka kuuma kwabwino kwambiri pamwamba, kuchepetsa kuwonongeka ndi kung'ambika panthawi yokonza kutentha kwambiri.
4. Chophimba Choyera Kwambiri cha SiC:Chogwirira chathu chimatsimikizira kuti sichikuipitsidwa kwambiri mu njira zochepetsera kuipitsidwa kwa semiconductor, zomwe zimapangitsa kuti mafakitale omwe amafunikira kuyera kwambiri zinthu azikhala odalirika.
5. Kugwiritsa Ntchito Msika Waukulu:TheSiC yokutidwa ndi graphite susceptorMsika ukupitilira kukula pamene kufunikira kwa zinthu zapamwamba zopangidwa ndi SiC popanga zinthu za semiconductor kukukwera, zomwe zikuyika gawo ili ngati wosewera wofunikira pamsika wa graphite wafer carrier komanso msika wa silicon carbide coated graphite trays.
Katundu Wamba wa Zida Zoyambira za Graphite:
| Kuchuluka Koonekera: | 1.85 g/cm3 |
| Kukana kwa Magetsi: | 11 μΩm |
| Mphamvu Yosinthasintha: | 49 MPa (500kgf/cm2) |
| Kulimba kwa Pagombe: | 58 |
| Phulusa: | <5ppm |
| Kutentha kwa Matenthedwe: | 116 W/mK (100 kcal/mhr-℃) |
| Matenda a mtima (CVD) SiC薄膜基本物理性能 Makhalidwe oyambira a CVD SiCchophimba | |
| 性质 / Katundu | 典型数值 / Mtengo Wodziwika |
| 晶体结构 / Crystal Structure | FCC β phase 多晶,主要為(111)取向) |
| 密度 / Density | 3.21 g/cm³ |
| 硬度 / Kuuma | 2500 维氏硬度 (500g katundu) |
| 晶粒大小 / Grain SiZe | 2 ~ 10μm |
| 纯度 / Chemical Purity | 99.99995% |
| 热容 / Kutentha Mphamvu | 640 J·kg-1·K-1 |
| 升华温度 / Sublimation Kutentha | 2700℃ |
| 抗弯强度 / Flexural Strength | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt kupindika, 1300℃ |
| 导热系数 / Thermal Conductivity | 300W·m-1·K-1 |
| 热膨胀系数 / Thermal Expansion(CTE) | 4.5×10-6K-1 |
VET Energy ndiye kampani yeniyeni yopanga zinthu zopangidwa ndi graphite ndi silicon carbide zokhala ndi zokutira zosiyanasiyana monga zokutira za SiC, zokutira za TaC, zokutira za kaboni wagalasi, zokutira za pyrolytic carbon, ndi zina zotero, imatha kupereka magawo osiyanasiyana opangidwa ndi makina a semiconductor ndi photovoltaic.
Gulu lathu laukadaulo limachokera ku mabungwe apamwamba ofufuza za m'dziko muno, ndipo lingakupatseni mayankho aukadaulo ambiri.
Timapanga njira zamakono nthawi zonse kuti tipereke zipangizo zamakono kwambiri, ndipo tapanga ukadaulo wapadera wokhala ndi patent, womwe ungapangitse kuti mgwirizano pakati pa chophimba ndi substrate ukhale wolimba komanso wosasinthasintha.
Tikulandirani mosangalala kuti mudzacheze fakitale yathu, tiyeni tikambirane zambiri!
-
Ma Substrates/Zonyamulira za Graphite zokhala ndi Silicon Carbi...
-
SiC Coated Graphite Susceptor Yopangira UV-LED Yakuya
-
Chonyamulira cha MOCVD Graphite chokhala ndi CVD SiC Coating
-
CVD Silicon Carbide Coating MOCVD Susceptor
-
Silicon Carbide Epitaxial Sheet Thireyi Yopangira Semico ...
-
Silikoni Carbide Yokutidwa ndi Graphite Substrate ya S ...









