Tus neeg raug mob ntawm lub thoobyog ib qho tseem ceeb hauv cov txheej txheem loj hlob ntawm semiconductor epitaxial xws li MOCVD, MBE, CVD. Nws feem ntau yog siv los nqa cov wafers hauv cov chav kub siab thiab muab ib puag ncig thermal field uas sib xws thiab ruaj khov kom ntseeg tau tias cov txheej epitaxial raug tso tawm (xws li GaN, SiC, thiab lwm yam). Nws lub luag haujlwm tseem ceeb yog ua kom muaj kev sib xws siab ntawm qhov kub ntawm wafer los ntawm kev tswj hwm thermal field, yog li ua kom ntseeg tau tias qhov tuab, doping concentration, thiab cov qauv siv lead ua ke ntawm cov yeeb yaj kiab nyias epitaxial.
Peb siv peb cov thev naus laus zis patented los ua kom lub tshuab ua haujlwm tau zoolub thawv susceptornrog rau kev ntshiab siab heev, kev sib npaug zoo thiab lub neej ua haujlwm zoo heev, nrog rau kev tiv taus tshuaj lom neeg siab thiab kev ruaj khov thermal.
VET Zog siv cov graphite purity siab nrog CVD-SiC txheej los txhim kho kev ruaj khov tshuaj lom neeg:
1. Cov khoom siv graphite purity siab
Kev ua kom sov siab: qhov ua kom sov ntawm graphite yog peb zaug ntawm silicon, uas tuaj yeem hloov pauv cua sov sai sai los ntawm qhov chaw cua sov mus rau wafer thiab ua kom lub sijhawm cua sov luv dua.
Lub zog kho tshuab: Isostatic siab graphite ceev ≥ 1.85 g / cm ³, muaj peev xwm tiv taus qhov kub siab tshaj 1200 ℃ yam tsis muaj kev hloov pauv.
2. CVD SiC txheej
Ib txheej β - SiC yog tsim rau ntawm qhov chaw ntawm graphite los ntawm kev tso pa tshuaj lom neeg (CVD), nrog qhov huv ntawm ≥ 99.99995%, qhov yuam kev sib xws ntawm cov txheej tuab yog tsawg dua ± 5%, thiab qhov roughness ntawm qhov chaw yog tsawg dua Ra0.5um.
3. Kev txhim kho kev ua tau zoo:
Kev tiv thaiv corrosion: tuaj yeem tiv taus cov pa roj corrosive siab xws li Cl2, HCl, thiab lwm yam, tuaj yeem ntev lub neej ntawm GaN epitaxy los ntawm peb zaug hauv NH3 ib puag ncig.
Kev ruaj khov ntawm thermal: Tus coefficient ntawm thermal expansion (4.5 × 10-6 / ℃) phim graphite kom tsis txhob muaj kev tawg ntawm txheej txheej los ntawm kev hloov pauv ntawm qhov kub thiab txias.
Kev Nyuaj Siab thiab Kev Hnav Tsis Taus: Qhov Vickers hardness ncav cuag 28 GPa, uas yog 10 npaug siab dua graphite thiab tuaj yeem txo qhov kev pheej hmoo ntawm kev khawb wafer.
| CVD SiC薄膜基本物理性能 Cov khoom siv lub cev yooj yim ntawm CVD SiCtxheej | |
| 性质 / Khoom vaj khoom tsev | 典型数值 / Tus nqi ib txwm muaj |
| 晶体结构 / Cov Qauv Siv Crystal | FCC β theem多晶, 主要为(111) Ib |
| 密度 / Qhov Ceev | 3.21 g/cm³ |
| 硬度 / Qhov nyuaj | 2500 维氏硬度 (500g load) |
| 晶粒大小 / Cov nplej loj | 2 ~ 10μm |
| 纯度 / Kev Ntshiab Tshuaj | 99.99995% |
| Cov duab / Peev Xwm Kub | 640 J·kg-1·K-1 |
| 升华温度 Kub Sublimation | 2700 ℃ |
| 抗弯强度 Lub zog flexural | 415 MPa RT 4-point |
| 杨氏模量 / Cov Modulus Hluas | 430 Gpa 4pt khoov, 1300 ℃ |
| 导热系数 / ThermalKev coj ua hluav taws xob | 300W·m-1·K-1 |
| 热膨胀系数 / Kev nthuav dav thermal (CTE) | 4.5 × 10-6K-1 |
Ningbo VET Energy Technology Co., Ltd yog ib lub tuam txhab ua lag luam siab heev uas tsom mus rau kev tsim kho thiab tsim cov khoom siv siab heev, cov ntaub ntawv thiab cov thev naus laus zis suav nrog graphite, silicon carbide, ceramics, kev kho qhov chaw zoo li SiC txheej, TaC txheej, iav carbon txheej, pyrolytic carbon txheej, thiab lwm yam, cov khoom no tau siv dav hauv photovoltaic, semiconductor, lub zog tshiab, metallurgy, thiab lwm yam.
Peb pab neeg kev tshaj lij los ntawm cov tsev kawm tshawb fawb hauv tsev sab saum toj, thiab tau tsim ntau yam thev naus laus zis patented los xyuas kom meej tias cov khoom ua tau zoo thiab zoo, kuj tseem tuaj yeem muab cov neeg siv khoom nrog cov khoom siv tshaj lij.
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