Epitaxial Epi Graphite chim Susceptor

Kev Piav Qhia Luv:

VET Zog tsom mus rau kev tshawb fawb thiab kev tsim cov khoom siv graphite siab-purity, los ntawm kev siv tshuab CVD txheej txheem ywj pheej, tus susceptor ua ke cov thermal conductivity ntawm graphite nrog rau qhov tsis kam oxidation ntawm SiC, thiab tuaj yeem ua haujlwm ruaj khov ntawm qhov kub siab ntawm 1600 ℃, nrog rau lub neej ntev dua peb zaug.

 

 


Cov Lus Qhia Txog Khoom

Cov Cim Npe Khoom

Epitaxial Epi Graphite chim Susceptor

Epitaxial Epi Graphite chim Susceptoryog ib qho khoom siv txhawb nqa thiab cua sov uas tsim tshwj xeeb siv los tuav thiab ua kom sov cov khoom siv semiconductor thaum lub sijhawm tsim khoom xws li Deposition lossis Epitaxy.

Nws cov qauv muaj xws li feem ntau yog cylindrical lossis me ntsis zoo li lub thoob, nto muaj ntau lub hnab lossis platforms rau kev tso cov wafers, tuaj yeem yog cov qauv khov kho lossis khoob, nyob ntawm txoj kev cua sov.

Cov haujlwm tseem ceeb ntawm epitaxial barrel susceptor:

1. Wafer Carrier thiab Kub Tswj
Qhov chaw susceptor yog tsim los nrog ntau lub hnab tshos wafer (xws li hexagonal lossis octagonal arrangement), uas tuaj yeem txhawb nqa 6-15 wafers tib lub sijhawm. Lub zog thermal conductivity siab ntawm high-purity graphite (120-150W / mK) ua kom muaj kev hloov pauv cua sov sai, ua ke nrog kev ua haujlwm tig (5-20 RPM), ua rau qhov kub ntawm qhov chaw wafer ntawm <± 1 ℃ thiab epitaxial txheej thickness uniformity ntawm <1%.

2. Kev txhim kho ntawm cov roj reactant ntws kev taw qhia
Lub microstructure ntawm qhov chaw susceptor tuaj yeem rhuav tshem cov nyhuv ntawm cov ciam teb, uas tso cai rau kev faib tawm ntawm cov pa roj teb (xws li SiH4, NH3) thiab txhim kho qhov sib xws ntawm cov nqi tso tawm.

3. Tiv thaiv kev ua qias tuaj thiab tiv thaiv kev xeb
Cov khoom siv graphite yooj yim lwj thiab tso cov hlau tsis huv (xws li Fe, Ni) ntawm qhov kub siab, thaum lub txheej CVD SiC tuab 100μm tuaj yeem tsim cov khoom thaiv ntom ntom los tiv thaiv graphite volatilization, ua rau muaj qhov tsis zoo ntawm wafer <0.1 qhov tsis zoo / cm ².

Cov ntawv thov:
-Feem ntau siv rau kev loj hlob ntawm silicon epitaxial
- Kuj siv tau rau epitaxy ntawm lwm cov ntaub ntawv semiconductor xws li GaAs, InP, thiab lwm yam.

VET Zog siv cov graphite purity siab nrog CVD-SiC txheej los txhim kho kev ruaj khov tshuaj lom neeg:

1. Cov khoom siv graphite purity siab
Kev ua kom sov siab: qhov ua kom sov ntawm graphite yog peb zaug ntawm silicon, uas tuaj yeem hloov pauv cua sov sai sai los ntawm qhov chaw cua sov mus rau wafer thiab ua kom lub sijhawm cua sov luv dua.
Lub zog kho tshuab: Isostatic siab graphite ceev ≥ 1.85 g / cm ³, muaj peev xwm tiv taus qhov kub siab tshaj 1200 ℃ yam tsis muaj kev hloov pauv.

2. CVD SiC txheej
Ib txheej β - SiC yog tsim rau ntawm qhov chaw ntawm graphite los ntawm kev tso pa tshuaj lom neeg (CVD), nrog qhov huv ntawm ≥ 99.99995%, qhov yuam kev sib xws ntawm cov txheej tuab yog tsawg dua ± 5%, thiab qhov roughness ntawm qhov chaw yog tsawg dua Ra0.5um.

3. Kev txhim kho kev ua tau zoo:
Kev tiv thaiv corrosion: tuaj yeem tiv taus cov pa roj corrosive siab xws li Cl2, HCl, thiab lwm yam, tuaj yeem ntev lub neej ntawm GaN epitaxy los ntawm peb zaug hauv NH3 ib puag ncig.
Kev ruaj khov ntawm thermal: Tus coefficient ntawm thermal expansion (4.5 × 10-6 / ℃) phim graphite kom tsis txhob muaj kev tawg ntawm txheej txheej los ntawm kev hloov pauv ntawm qhov kub thiab txias.
Kev Nyuaj Siab thiab Kev Hnav Tsis Taus: Qhov Vickers hardness ncav cuag 28 GPa, uas yog 10 npaug siab dua graphite thiab tuaj yeem txo qhov kev pheej hmoo ntawm kev khawb wafer.

 

Lub cev muaj zog (10)
SiC Barrel Susceptor

CVD SiC薄膜基本物理性能

Cov khoom siv lub cev yooj yim ntawm CVD SiCtxheej

性质 / Khoom vaj khoom tsev

典型数值 / Tus nqi ib txwm muaj

晶体结构 / Cov Qauv Siv Crystal

FCC β theem多晶, 主要为(111) Ib

密度 / Qhov Ceev

3.21 g/cm³

硬度 / Qhov nyuaj

2500 维氏硬度 (500g load)

晶粒大小 / Cov nplej loj

2 ~ 10μm

纯度 / Kev Ntshiab Tshuaj

99.99995%

Cov duab / Peev Xwm Kub

640 J·kg-1·K-1

升华温度 Kub Sublimation

2700 ℃

抗弯强度 Lub zog flexural

415 MPa RT 4-point

杨氏模量 / Cov Modulus Hluas

430 Gpa 4pt khoov, 1300 ℃

导热系数 / ThermalKev coj ua

300W·m-1·K-1

热膨胀系数 / Kev Nthuav Dav Kub (CTE)

4.5 × 10-6K-1

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Ningbo VET Energy Technology Co., Ltd yog ib lub tuam txhab ua lag luam siab heev uas tsom mus rau kev tsim kho thiab tsim cov khoom siv siab heev, cov ntaub ntawv thiab cov thev naus laus zis suav nrog graphite, silicon carbide, ceramics, kev kho qhov chaw zoo li SiC txheej, TaC txheej, iav carbon txheej, pyrolytic carbon txheej, thiab lwm yam, cov khoom no tau siv dav hauv photovoltaic, semiconductor, lub zog tshiab, metallurgy, thiab lwm yam.

Peb pab neeg kev tshaj lij los ntawm cov tsev kawm tshawb fawb hauv tsev sab saum toj, thiab tau tsim ntau yam thev naus laus zis patented los xyuas kom meej tias cov khoom ua tau zoo thiab zoo, kuj tseem tuaj yeem muab cov neeg siv khoom nrog cov khoom siv tshaj lij.

Cov neeg siv khoom

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