Epitaxial Epi Graphite chim Susceptor

Epitaxial Epi Graphite chim Susceptor

Epitaxial Epi Graphite chim Susceptoryog ib qho tshwj xeeb tsim kev txhawb nqa thiab cov cuab yeej siv cua sov siv los tuav thiab kub semiconductor substrates thaum tsim cov txheej txheem xws li Deposition lossis Epitaxy txheej txheem.

Nws cov qauv muaj xws li feem ntau cylindrical los yog me ntsis chim-zoo li tus, nto nta ntau lub hnab los yog platforms rau tso lub wafers, yuav ua tau ruaj khov los yog hollow tsim, nyob ntawm seb cov cua sov txoj kev.

Lub luag haujlwm tseem ceeb ntawm epitaxial chim susceptor:

1. Wafer Carrier thiab Temperature Control
Lub susceptor nto yog tsim los nrog ntau lub hnab wafer (xws li hexagonal lossis octagonal kev npaj), uas tuaj yeem txhawb nqa 6-15 wafers ib txhij. Lub siab thermal conductivity ntawm high-purity graphite (120-150W / mK) ua kom cov cua sov hloov mus sai, ua ke nrog kev sib hloov ua haujlwm (5-20 RPM), uas ua rau lub wafer nto kub sib txawv ntawm <± 1 ℃ thiab epitaxial txheej thickness uniformity ntawm <1%.

2. Optimization ntawm reactant gas flow kev taw qhia
Lub microstructure ntawm lub susceptor nto tuaj yeem rhuav tshem cov txheej txheem ciam teb, tso cai rau kev faib tawm ntawm cov pa roj (xws li SiH4, NH3) thiab txhim kho qhov sib xws ntawm kev tso nyiaj.

3. Los tiv thaiv kev ua qias tuaj thiab tiv thaiv corrosion
Graphite substrates yog nquag decomposition thiab tso cov hlau impurities (xws li Fe, Ni) ntawm qhov kub thiab txias, thaum 100μm tuab CVD SiC txheej tuaj yeem ua rau muaj kev cuam tshuam ntom ntom los tiv thaiv graphite volatilization, ua rau muaj qhov tsis xws luag ntawm <0.1 defects / cm².

Daim ntawv thov:
- Feem ntau siv rau silicon epitaxial kev loj hlob
-Keem siv tau rau epitaxy ntawm lwm yam khoom siv semiconductor xws li GaAs, InP, thiab lwm yam.

VET Zog siv siab purity graphite nrog CVD-SiC txheej los txhim kho cov tshuaj stability:

1. High purity graphite khoom
High thermal conductivity: thermal conductivity ntawm graphite yog peb npaug ntawm silicon, uas tuaj yeem hloov cov cua sov los ntawm cov cua sov mus rau wafer thiab txo lub sij hawm cua sov.
Mechanical zog: Isostatic siab graphite ntom ≥ 1.85 g / cm ³, muaj peev xwm tiv taus qhov kub siab tshaj 1200 ℃ yam tsis muaj deformation.

2. CVD SiC txheej
A β - SiC txheej yog tsim nyob rau saum npoo ntawm graphite los ntawm cov tshuaj vapor deposition (CVD), nrog ib tug purity ntawm ≥ 99.99995%, lub uniformity yuam kev ntawm txheej thickness yog tsawg tshaj li ± 5%, thiab lub nto roughness yog tsawg dua Ra0.5um.

3. Kev txhim kho kev ua haujlwm:
Corrosion tsis kam: tuaj yeem tiv taus cov roj corrosive siab xws li Cl2, HCl, thiab lwm yam, tuaj yeem txuas ntxiv lub neej ntawm GaN epitaxy los ntawm peb zaug hauv NH3 ib puag ncig.
Thermal stability: Lub coefficient ntawm thermal expansion (4.5 × 10-6 / ℃) sib tw graphite kom tsis txhob txheej tawg los ntawm qhov kub thiab txias.
Hardness thiab Wear Resistance: Vickers hardness ncav cuag 28 GPa, uas yog 10 npaug siab dua graphite thiab tuaj yeem txo qhov kev pheej hmoo ntawm wafer khawb.