Iingenelo zenkxaso yesikhephe se-silicon carbide xa kuthelekiswa nenkxaso yesikhephe se-quartz

Imisebenzi ephambili yeisikhephe se-silicon carbideinkxaso kunye nenkxaso yesikhephe se-quartz ziyafana.Inqanawa ye-silicon carbideInkxaso isebenza kakuhle kakhulu kodwa ixabiso liphezulu. Ibandakanya ulwalamano oluhlukileyo nenkxaso yesikhephe se-quartz kwizixhobo zokucubungula iibhetri ezineemeko zokusebenza ezinzima (ezifana nezixhobo ze-LPCVD kunye nezixhobo zokusasazwa kwe-boron). Kwizixhobo zokucubungula iibhetri ezineemeko zokusebenza eziqhelekileyo, ngenxa yobudlelwane bamaxabiso, inkxaso yesikhephe se-silicon carbide kunye nenkxaso yesikhephe se-quartz ziba ziindidi ezifanayo nezikhuphisanayo.

① Ubudlelwane bokutshintshana kwi-LPCVD kunye nezixhobo zokusasazwa kwe-boron

Izixhobo ze-LPCVD zisetyenziselwa inkqubo yokulungisa umaleko we-tunneling cell tunneling kunye ne-doped polysilicon layer.

Phantsi komoya ophantsi koxinzelelo, kunye nobushushu obufanelekileyo, ukwenziwa kwe-chemical reaction kunye nefilimu yokubeka izinto kuyafezekiswa ukulungiselela umaleko we-tunneling oxide kunye nefilimu ye-polysilicon. Kwinkqubo yokulungiselela umaleko we-tunneling oxidation kunye ne-doped polysilicon, inkxaso yesikhephe inobushushu obuphezulu bokusebenza kwaye ifilimu ye-silicon iya kufakwa kumphezulu. I-coefficient yokwandisa ubushushu ye-quartz yahlukile kakhulu kweye-silicon. Xa isetyenziswa kule nkqubo ingentla, kuyimfuneko ukucola rhoqo nokususa i-silicon ebekwe kumphezulu ukuthintela inkxaso yesikhephe se-quartz ukuba ingaphuki ngenxa yokwanda kobushushu kunye nokucutheka ngenxa ye-coefficient yokwandisa ubushushu eyahlukileyo kwi-silicon. Ngenxa yokucola rhoqo kunye namandla aphantsi obushushu obuphezulu, isibambi sesikhephe se-quartz sinobomi obufutshane kwaye sihlala sitshintshwa kwinkqubo yokulungiselela umaleko we-tunnel oxidation kunye ne-doped polysilicon, nto leyo enyusa kakhulu iindleko zemveliso yeseli yebhetri. I-coefficient yokwandisa ubushushu yei-silicon carbideiphantse yafana neyesilicon. Idityanisiweisikhephe se-silicon carbideIsibambi asifuni ukucolwa kwinkqubo yokulungiselela i-oxidation ye-tunnel kunye ne-doped polysilicon layer. Sinamandla aphezulu obushushu obuphezulu kwaye sisebenza ixesha elide. Siyindlela elungileyo endaweni yesibambi sesikhephe se-quartz.

Izixhobo zokwandisa iBoron zisetyenziswa kakhulu kwinkqubo yokukhupha izinto zeboron kwi-substrate ye-silicon wafer yohlobo lwe-N yeseli yebhetri ukulungiselela i-P-type emitter ukwenza i-PN junction. Umgaqo osebenzayo kukwenza ukusabela kweekhemikhali kunye nokwakheka kwefilimu yokubeka iimolekyuli kwindawo enobushushu obuphezulu. Emva kokuba ifilimu yenziwe, inokusasazwa ngokufudumeza kobushushu obuphezulu ukuze kufezekiswe umsebenzi wokukhupha idoping kumphezulu we-silicon wafer. Ngenxa yobushushu obuphezulu bokusebenza kwezixhobo zokwandisa i-boron, isibambi senqanawa ye-quartz sinamandla aphantsi obushushu obuphezulu kunye nobomi obufutshane benkonzo kwizixhobo zokwandisa i-boron. Idibeneyoisikhephe se-silicon carbideIsibambi sinamandla aphezulu obushushu kwaye siyindlela elungileyo yokukhetha isibambi sesikhephe se-quartz kwinkqubo yokwandiswa kwe-boron.

② Ubudlelwane bokutshintshana kwezinye izixhobo zenkqubo

Izixhasi zeenqanawa zeSiC zinamandla okuvelisa aphantsi kwaye zisebenza kakuhle kakhulu. Amaxabiso azo ngokubanzi aphezulu kuneexhasi zeenqanawa zequartz. Kwiimeko zokusebenza ngokubanzi zezixhobo zokucubungula iiseli, umahluko kubomi benkonzo phakathi kwezixhasi zeenqanawa zeSiC kunye nezixhasi zeenqanawa zequartz mncinane. Abathengi abasezantsi bathelekisa kwaye bakhetha phakathi kwexabiso kunye nokusebenza ngokusekelwe kwiinkqubo zabo kunye neemfuno zabo. Izixhasi zeenqanawa zeSiC kunye nezixhasi zeenqanawa zequartz ziye zahlala zikho kwaye ziyakhuphisana. Nangona kunjalo, inzuzo iyonke yezixhasi zeenqanawa zeSiC iphezulu ngoku. Ngokuhla kweendleko zemveliso yezixhasi zeenqanawa zeSiC, ukuba ixabiso lokuthengisa lezixhasi zeenqanawa zeSiC liyehla, kuya kuba nakho ukukhuphisana okukhulu nezixhasi zeenqanawa zequartz.

Umlinganiselo wokusetyenziswa

Indlela yetekhnoloji yeseli ikakhulu yitekhnoloji yePERC kunye netekhnoloji yeTOPCon. Isabelo semarike setekhnoloji yePERC yi-88%, kwaye isabelo semarike setekhnoloji yeTOPCon yi-8.3%. Isabelo semarike esidibeneyo sezi zimbini yi-96.30%.

Njengoko kubonisiwe kumfanekiso ongezantsi:

Kwiteknoloji yePERC, inkxaso yesikhephe iyafuneka kwiinkqubo zokusasazeka kwe-phosphorus kunye nokutsalwa kwe-annealing ngaphambili. Kwiteknoloji yeTOPCon, inkxaso yesikhephe iyafuneka kwiinkqubo zokusasazeka kwe-boron yangaphambili, i-LPCVD, ukusasazeka kwe-phosphorus yangasemva kunye nokutsalwa kwe-annealing. Okwangoku, inkxaso yesikhephe se-silicon carbide isetyenziswa kakhulu kwinkqubo ye-LPCVD yeteknoloji yeTOPCon, kwaye ukusetyenziswa kwayo kwinkqubo yokusasazeka kwe-boron kuye kwaqinisekiswa kakhulu.

Umfanekiso Ukusetyenziswa kwenkxaso yesikhephe kwinkqubo yokucubungula iiseli

Qaphela: Emva kokufakelwa ngaphambili nangasemva kweetekhnoloji zePERC kunye neTOPCon, kusekho amakhonkco anjengokuprinta isikrini, ukucofa kunye nokuvavanya kunye nokuhlela, angabandakanyi ukusetyenziswa kwezixhaso zeenqanawa kwaye angadweliswanga kumfanekiso ongentla.