Izinzuzo zokusekelwa kwesikebhe se-silicon carbide uma kuqhathaniswa nokusekelwa kwesikebhe se-quartz

Imisebenzi eyinhloko yeisikebhe se-silicon carbideukwesekwa kanye nokusekelwa kwesikebhe se-quartz kuyafana.Isikebhe se-silicon carbideUkusekelwa kusebenza kahle kakhulu kodwa kunentengo ephezulu. Kwakha ubudlelwano obuhlukile nokusekelwa kwesikebhe se-quartz emishinini yokucubungula ibhethri enezimo zokusebenza ezinzima (njengemishini ye-LPCVD kanye nemishini yokusabalalisa i-boron). Emishinini yokucubungula ibhethri enezimo zokusebenza ezijwayelekile, ngenxa yobudlelwano bentengo, ukwesekwa kwesikebhe se-silicon carbide kanye nesikebhe se-quartz kuba yizigaba ezihambisanayo nezincintisanayo.

① Ubudlelwano bokufaka esikhundleni se-LPCVD kanye nemishini yokusabalalisa i-boron

Imishini ye-LPCVD isetshenziselwa inqubo yokulungisa ungqimba lwe-tunneling cell yebhethri kanye nenqubo yokulungiselela ungqimba lwe-polysilicon olufakwe i-doped. Isimiso sokusebenza:

Ngaphansi kwesimo sezulu esinomfutho ophansi, kuhlanganiswe nokushisa okufanele, ukwakheka kwefilimu yokusabela kwamakhemikhali kanye nokwakheka kwefilimu yokubeka kufezwa ukuze kulungiselelwe ungqimba lwe-oxide ye-tunneling kanye nefilimu ye-polysilicon encane kakhulu. Enqubweni yokulungiselela ungqimba lwe-tunneling kanye ne-doped polysilicon, ukwesekwa kwesikebhe kunokushisa okuphezulu kokusebenza futhi ifilimu ye-silicon izobekwa phezu kobuso. I-coefficient yokwandisa ukushisa ye-quartz ihluke kakhulu kweye-silicon. Uma isetshenziswa enqubweni engenhla, kuyadingeka ukukha amanzi njalo nokususa i-silicon ebekwe phezu kobuso ukuvimbela ukwesekwa kwesikebhe se-quartz ukuthi kungaphuki ngenxa yokwanda kokushisa kanye nokufinyela ngenxa ye-coefficient yokwandisa ukushisa ehlukile evela ku-silicon. Ngenxa yokupheka njalo kanye namandla aphansi okushisa okuphezulu, isibambi sesikebhe se-quartz siphila isikhathi esifushane futhi sivame ukushintshwa enqubweni yokulungiselela ungqimba lwe-tunnel oxidation kanye ne-doped polysilicon, okwandisa kakhulu izindleko zokukhiqiza zeseli lebhethri. I-coefficient yokwandisai-silicon carbidekufana nokwe-silicon. Okuhlanganisiweisikebhe se-silicon carbideIsibambo asidingi ukuqoqwa enqubweni yokulungiswa kwengqimba ye-polysilicon exutshwe ne-oxidation. Sinamandla aphezulu okushisa okuphezulu kanye nokuphila isikhathi eside. Siyindlela engcono kunesibambo sesikebhe se-quartz.

Imishini yokwandisa i-boron isetshenziswa kakhulu enqubweni yokufaka i-doping elements ye-boron ku-substrate ye-silicon wafer yohlobo lwe-N yeseli yebhethri ukulungiselela i-P-type emitter ukwakha i-PN junction. Umgomo osebenzayo uwukwenza ukusabela kwamakhemikhali kanye nokwakheka kwefilimu yokufaka ama-molecule endaweni eshisa kakhulu. Ngemva kokuba ifilimu seyakhiwe, ingasakazwa ngokushisa okuphezulu ukuze kufezwe umsebenzi wokufaka i-doping ebusweni be-silicon wafer. Ngenxa yokushisa okuphezulu kokusebenza kwemishini yokwandisa i-boron, isibambi sesikebhe se-quartz sinamandla aphansi okushisa okuphezulu kanye nokuphila okufushane kwenkonzo emishinini yokwandisa i-boron. Ihlanganisiweisikebhe se-silicon carbideIsibambo sinamandla aphezulu okushisa futhi siyindlela enhle esikhundleni sesibambo sesikebhe se-quartz enqubweni yokukhulisa i-boron.

② Ubudlelwano bokufaka esikhundleni kwezinye izinto zokusebenza

Izisekelo zesikebhe ze-SiC zinamandla okukhiqiza aqinile kanye nokusebenza okuhle kakhulu. Intengo yazo ngokuvamile iphakeme kuneyezisekelo zesikebhe ze-quartz. Ezimweni zokusebenza ezijwayelekile zemishini yokucubungula amaseli, umehluko empilweni yesevisi phakathi kwezisekelo zesikebhe ze-SiC kanye nezisekelo zesikebhe ze-quartz mncane. Amakhasimende aphansi aqhathanisa futhi akhethe phakathi kwentengo nokusebenza ngokusekelwe ezinqubweni nasezidingweni zawo. Izisekelo zesikebhe ze-SiC kanye nezisekelo zesikebhe ze-quartz sezihlangene futhi ziyancintisana. Kodwa-ke, inzuzo enkulu yezisekelo zesikebhe ze-SiC iphakeme kakhulu njengamanje. Njengoba izindleko zokukhiqiza zezisekelo zesikebhe ze-SiC zincipha, uma intengo yokuthengisa yezisekelo zesikebhe ze-SiC incipha, izophinde ibe nokuncintisana okukhulu nezisekelo zesikebhe ze-quartz.

Isilinganiso sokusetshenziswa

Indlela yobuchwepheshe beseli ikakhulukazi ubuchwepheshe be-PERC kanye nobuchwepheshe be-TOPCon. Isabelo semakethe sobuchwepheshe be-PERC singama-88%, kanti isabelo semakethe sobuchwepheshe be-TOPCon singama-8.3%. Isabelo semakethe esihlanganisiwe salezi ezimbili singama-96.30%.

Njengoba kuboniswe esithombeni esingezansi:

Kubuchwepheshe be-PERC, izisekelo zesikebhe ziyadingeka ukuze kusakazwe i-phosphorus yangaphambili kanye nezinqubo zokufaka i-annealing. Kubuchwepheshe be-TOPCon, izisekelo zesikebhe ziyadingeka ukuze kusakazwe i-boron yangaphambili, i-LPCVD, i-back phosphorus diffusion kanye nezinqubo zokufaka i-annealing. Njengamanje, izisekelo zesikebhe ze-silicon carbide zisetshenziswa kakhulu enqubweni ye-LPCVD yobuchwepheshe be-TOPCon, futhi ukusetshenziswa kwazo enqubweni yokusabalalisa i-boron kuye kwaqinisekiswa kakhulu.

Umfanekiso Ukusetshenziswa kwezisekelo zesikebhe enqubweni yokucubungula amaseli

Qaphela: Ngemva kokufakwa kobuchwepheshe be-PERC kanye ne-TOPCon ngaphambili nangemuva, kusenezixhumanisi ezifana nokuphrinta isikrini, ukuthungwa kwe-sintering kanye nokuhlola nokuhlunga, okungabandakanyi ukusetshenziswa kwezisekelo zesikebhe futhi ezingabhalwanga esithombeni esingenhla.