Cov txiaj ntsig ntawm kev txhawb nqa nkoj silicon carbide piv rau kev txhawb nqa nkoj quartz

Cov haujlwm tseem ceeb ntawmsilicon carbide nkojkev txhawb nqa thiab kev txhawb nqa nkoj quartz yog tib yam.Silicon carbide nkojkev txhawb nqa muaj kev ua tau zoo heev tab sis tus nqi siab. Nws tsim kev sib raug zoo lwm txoj hauv kev nrog kev txhawb nqa nkoj quartz hauv cov khoom siv ua roj teeb nrog cov xwm txheej ua haujlwm hnyav (xws li cov khoom siv LPCVD thiab cov khoom siv boron diffusion). Hauv cov khoom siv ua roj teeb nrog cov xwm txheej ua haujlwm ib txwm muaj, vim muaj kev sib raug zoo ntawm tus nqi, silicon carbide thiab kev txhawb nqa nkoj quartz dhau los ua pawg sib koom ua ke thiab sib tw.

① Kev sib raug zoo ntawm kev hloov pauv hauv LPCVD thiab cov khoom siv boron diffusion

Cov khoom siv LPCVD siv rau kev oxidation ntawm lub roj teeb cell tunneling thiab cov txheej txheem npaj cov txheej txheem polysilicon doped. Txoj cai ua haujlwm:

Nyob rau hauv huab cua qis-siab, ua ke nrog qhov kub thiab txias, tshuaj lom neeg tshuaj lom neeg thiab kev tsim cov zaj duab xis deposition tau ua tiav los npaj cov txheej txheem tunneling oxide ultra-thin thiab zaj duab xis polysilicon. Hauv cov txheej txheem tunneling oxidation thiab doped polysilicon txheej npaj, lub nkoj txhawb nqa muaj qhov kub ua haujlwm siab thiab zaj duab xis silicon yuav raug tso rau ntawm qhov chaw. Cov coefficient thermal expansion ntawm quartz txawv ntawm silicon. Thaum siv rau hauv cov txheej txheem saum toj no, nws yog qhov tsim nyog los tsis tu ncua pickle thiab tshem tawm cov silicon tso rau ntawm qhov chaw kom tiv thaiv cov nkoj txhawb nqa quartz los ntawm kev tawg vim thermal expansion thiab contraction vim qhov sib txawv thermal expansion coefficient los ntawm silicon. Vim yog pickling ntau zaus thiab qis kub siab zog, lub nkoj tuav quartz muaj lub neej luv luv thiab feem ntau hloov pauv hauv qhov av oxidation thiab doped polysilicon txheej npaj txheej txheem, uas ua rau cov nqi tsim khoom ntawm lub roj teeb cell ntau ntxiv. Cov coefficient nthuav dav ntawmsilicon carbideyog ze li ntawm silicon. Qhov kev sib xyaw ua kesilicon carbide nkojTus tuav tsis tas yuav tsum tau pickling hauv qhov av oxidation thiab doped polysilicon txheej npaj cov txheej txheem. Nws muaj lub zog kub siab thiab lub neej ua haujlwm ntev. Nws yog lwm txoj hauv kev zoo rau tus tuav nkoj quartz.

Cov khoom siv nthuav dav Boron feem ntau yog siv rau cov txheej txheem ntawm doping boron cov ntsiab lus ntawm N-hom silicon wafer substrate ntawm lub roj teeb cell los npaj P-hom emitter los tsim ib qho PN junction. Lub hauv paus ntsiab lus ua haujlwm yog kom paub txog cov tshuaj lom neeg thiab cov zaj duab xis tso tawm molecular hauv huab cua kub siab. Tom qab zaj duab xis tau tsim, nws tuaj yeem diffused los ntawm kev kub siab kom paub txog kev ua haujlwm doping ntawm silicon wafer nto. Vim yog qhov kub ua haujlwm siab ntawm cov khoom siv nthuav dav boron, lub nkoj tuav quartz muaj lub zog qis kub siab thiab lub neej luv luv hauv cov khoom siv nthuav dav boron. Lub integratedsilicon carbide nkojtus tuav muaj lub zog kub siab thiab yog lwm txoj hauv kev zoo rau tus tuav nkoj quartz hauv cov txheej txheem nthuav dav boron.

② Kev sib raug zoo ntawm kev hloov pauv hauv lwm cov khoom siv txheej txheem

Cov khoom txhawb nqa nkoj SiC muaj peev xwm tsim khoom tsawg thiab ua tau zoo heev. Lawv tus nqi feem ntau siab dua li cov khoom txhawb nqa nkoj quartz. Feem ntau cov xwm txheej ua haujlwm ntawm cov khoom siv ua haujlwm ntawm tes, qhov sib txawv ntawm lub neej ua haujlwm ntawm cov khoom txhawb nqa nkoj SiC thiab cov khoom txhawb nqa nkoj quartz yog me me. Cov neeg siv khoom hauv qab no feem ntau sib piv thiab xaiv ntawm tus nqi thiab kev ua tau zoo raws li lawv tus kheej cov txheej txheem thiab kev xav tau. Cov khoom txhawb nqa nkoj SiC thiab cov khoom txhawb nqa nkoj quartz tau dhau los ua ke thiab sib tw. Txawm li cas los xij, qhov nyiaj tau los ntawm cov khoom txhawb nqa nkoj SiC yog qhov siab heev tam sim no. Nrog rau kev poob qis ntawm tus nqi tsim khoom ntawm cov khoom txhawb nqa nkoj SiC, yog tias tus nqi muag ntawm cov khoom txhawb nqa nkoj SiC poob qis, nws tseem yuav ua rau muaj kev sib tw ntau dua rau cov khoom txhawb nqa nkoj quartz.

Kev siv piv

Txoj kev siv tshuab hlwb hluav taws xob feem ntau yog PERC technology thiab TOPCon technology. Feem pua ​​ntawm kev ua lag luam ntawm PERC technology yog 88%, thiab feem pua ​​ntawm kev ua lag luam ntawm TOPCon technology yog 8.3%. Feem pua ​​ntawm kev ua lag luam ua ke ntawm ob qho no yog 96.30%.

Raws li pom hauv daim duab hauv qab no:

Hauv PERC thev naus laus zis, kev txhawb nqa nkoj yog qhov yuav tsum tau rau cov txheej txheem phosphorus diffusion thiab annealing pem hauv ntej. Hauv TOPCon thev naus laus zis, kev txhawb nqa nkoj yog qhov yuav tsum tau rau cov txheej txheem boron pem hauv ntej, LPCVD, rov qab phosphorus diffusion thiab annealing txheej txheem. Tam sim no, silicon carbide nkoj txhawb nqa feem ntau yog siv hauv LPCVD txheej txheem ntawm TOPCon thev naus laus zis, thiab lawv daim ntawv thov hauv cov txheej txheem boron diffusion tau raug txheeb xyuas feem ntau.

Daim Duab Daim Ntawv Thov ntawm cov nkoj txhawb nqa hauv cov txheej txheem ua haujlwm ntawm tes

Lus Cim: Tom qab txheej pem hauv ntej thiab nraub qaum ntawm PERC thiab TOPCon thev naus laus zis, tseem muaj cov kev sib txuas xws li kev luam ntawv tshuaj ntsuam, sintering thiab kev sim thiab kev cais tawm, uas tsis koom nrog kev siv cov nkoj txhawb nqa thiab tsis teev nyob rau hauv daim duab saum toj no.