Menene suturar sic? – VET ENERGY

Silicon Carbidewani abu ne mai wuya wanda ya ƙunshi silicon da carbon, kuma ana samunsa a cikin yanayi a matsayin moissanite na ma'adinai da ba kasafai ba. Silicon carbide barbashi za a iya bonded tare da sintering don samar da sosai wuya yumbu, wanda aka yadu amfani a aikace-aikace bukatar high karko, musamman a semiconductor procession.

Tsarin jiki na SiC

Menene SiC Coating?

SiC shafi ne mai yawa, sawu-resistant silicon carbide shafi tare da babban lalata da kuma zafi juriya da kuma m thermal watsin. Wannan babban rufin SiC mai tsabta ana amfani dashi da farko a cikin semiconductor da masana'antar lantarki don kare masu ɗaukar wafer, tushe da abubuwan dumama daga mahalli masu lalacewa da masu amsawa. Rufin SiC kuma ya dace da murhun wuta da samfurin dumama a cikin babban injin, mai amsawa da yanayin oxygen.

High tsarki SiC shafi surface

Menene tsarin suturar SiC?

An ajiye wani bakin ciki na siliki carbide a saman abin da ake amfani da shiCVD (Tsarin Tururi na Chemical). Ana yin ajiya yawanci a yanayin zafi na 1200-1300 ° C kuma yanayin haɓaka yanayin zafi na kayan aikin ya kamata ya dace da rufin SiC don rage yawan damuwa na thermal.

CVD SIC FILM SIRRIN CRYSTAL

CVD SIC Coating FILM CRYSTAL STRUCTURE

Abubuwan da ke cikin jiki na suturar SiC suna nunawa a cikin yanayin juriya na zafin jiki, taurinsa, juriya na lalata da haɓakar thermal.

Matsalolin jiki na yau da kullun yawanci kamar haka:

Tauri: SiC shafi yawanci yana da Vickers Hardness a cikin kewayon 2000-2500 HV, wanda ke ba su matsanancin lalacewa da juriya a cikin aikace-aikacen masana'antu.

Yawan yawa: Rubutun SiC yawanci suna da yawa na 3.1-3.2 g/cm³. Babban yawa yana ba da gudummawa ga ƙarfin injina da dorewa na sutura.

Ƙarfafawar thermal: SiC coatings da high thermal conductivity, yawanci a cikin kewayon 120-200 W / mK (a 20 ° C). Wannan yana ba shi kyakkyawan yanayin zafi a cikin yanayin zafi mai zafi kuma ya sa ya dace da kayan aikin zafi na musamman a masana'antar semiconductor.

Wurin narkewa: silicon carbide yana da wurin narkewa kamar 2730 ° C kuma yana da kyakkyawan kwanciyar hankali a yanayin zafi.

Coefficient na Thermal Expansion: SiC coatings da low mikakke coefficient na thermal fadada (CTE), yawanci a cikin kewayon 4.0-4.5 µm/mK (a cikin 25-1000 ℃). Wannan yana nufin cewa girman girmansa yana da kyau a kan manyan bambance-bambancen zafin jiki.

Juriya na lalata: SiC coatings ne musamman juriya ga lalata a cikin karfi acid, alkali da oxidizing yanayi, musamman a lokacin da yin amfani da karfi acid (kamar HF ko HCl), su lalata juriya nisa fiye da na al'ada karfe kayan.

SiC shafi aikace-aikace substrate

Ana amfani da suturar SiC sau da yawa don inganta juriya na lalata, juriya mai girma, da juriya na yashwar plasma na substrate. Abubuwan gama-gari na aikace-aikacen sun haɗa da masu zuwa:

Nau'in substrate	Dalilin aikace-aikacen	Amfani na yau da kullun
Graphite	- Tsarin haske, kyakkyawan halayen thermal - Amma sauƙin lalata ta hanyar plasma, yana buƙatar kariya ta suturar SiC	Wuraren ɗaki, kwale-kwalen graphite, trays etching plasma, da sauransu.
Quartz (Quartz/SiO₂)	- Tsafta mai girma amma cikin sauƙin lalata - Rufi yana haɓaka juriya na yashwar plasma	CVD/PECVD chamber sassa
Ceramics (kamar alumina Al₂O₃)	- Babban ƙarfi da tsayayyen tsari - Rufi inganta surface lalata juriya	Rufin ɗakin, kayan aiki, da sauransu.
Karfe (kamar molybdenum, titanium, da dai sauransu)	- Kyakkyawan halayen thermal amma rashin juriya na lalata - Rufi yana inganta kwanciyar hankali	Musamman tsari dauki aka gyara
Silicon carbide sintered jiki (SiC girma)	- Don wuraren da ke da manyan buƙatu don yanayin aiki mai rikitarwa - Rufi yana kara inganta tsabta da juriya na lalata	Babban-ƙarshen CVD/ALD abubuwan haɗin ɗakin

Ana amfani da samfuran da aka lulluɓe da SiC a cikin yankuna masu zuwa

Ana amfani da samfuran suturar SiC sosai a cikin sarrafa semiconductor, galibi a cikin babban zafin jiki, babban lalata da kuma yanayin yanayin plasma mai ƙarfi. Waɗannan su ne manyan matakai ko filayen aikace-aikace da taƙaitaccen bayanin:

Tsarin aikace-aikacen / filin	Takaitaccen bayanin	Silicon Carbide Coating aiki
Plasma etching (Etching)	Yi amfani da gas na tushen chlorine ko fluorine don canja wurin tsari	Yi tsayayya da yashwar plasma kuma hana gurɓataccen barbashi da ƙarfe
Jigilar tururin sinadarai (CVD/PECVD)	Deposition na oxide, nitride da sauran bakin ciki fina-finai	Yi tsayayya da iskar iskar gas mai lalata da haɓaka rayuwar abubuwan
Jiki tururi jijiya (PVD).	Babban-makamashi barbashi bombardment a lokacin da shafi tsari	Inganta juriya na yashwa da juriya na zafi na ɗakin amsawa
Tsarin MOCVD (kamar SiC epitaxial girma)	Halin dogon lokaci a ƙarƙashin babban zafin jiki da yanayi mai lalata hydrogen	Kula da kwanciyar hankali na kayan aiki da hana gurɓatar lu'ulu'u masu girma
Tsarin maganin zafi (LPCVD, yaduwa, annealing, da sauransu)	Yawancin lokaci ana yin su a babban zafin jiki da sarari / yanayi	Kare kwale-kwalen graphite da trays daga oxidation ko lalata
Mai ɗaukar wafer / chuck (mai sarrafa wafer)	Tushen zane don canja wurin wafer ko tallafi	Rage zubar da barbashi kuma guje wa gurɓatar lamba
Abubuwan da aka gyara na ALD	Maimaita kuma daidai sarrafa jigon atomic Layer	Rufin yana kiyaye ɗakin tsafta kuma yana da babban juriya na lalata

Me yasa zabar VET Energy?

VET Energy shine babban masana'anta, mai ƙididdigewa kuma jagorar samfuran suturar SiC a China, manyan samfuran SiC ɗin sun haɗa da.mai ɗaukar wafer tare da suturar SiC, SiC mai rufiepitaxial susceptor, SiC mai rufi zoben graphite, Sassan rabin wata tare da suturar SiC, SiC mai rufin carbon-carbon composite, SiC mai rufi jirgin ruwan wafer, SiC mai rufi, da sauransu. VET Energy ya himmatu wajen samar da masana'antar semiconductor tare da fasaha na ƙarshe da mafita na samfur, kuma yana tallafawa ayyukan gyare-gyare. Muna fatan kasancewa abokin tarayya na dogon lokaci a kasar Sin.