Silicon Carbideni uruganda rukomeye rurimo silikoni na karubone, kandi iboneka muri kamere nka minisite idasanzwe ya minisite. Silicon karbide ibice bishobora guhuzwa hamwe no gucumura kugirango bibumbwe mubutaka bukomeye cyane, bukoreshwa cyane mubisabwa bisaba kuramba cyane, cyane cyane mukigenda cya semiconductor.
Imiterere ifatika ya SiC
Ni iki?
Ipfundikizo ya SiC ni karbide yuzuye ya silikoni irwanya kwambara hamwe na ruswa nyinshi kandi irwanya ubushyuhe hamwe nubushuhe buhebuje. Ipfunyika ryinshi rya SiC rikoreshwa cyane cyane munganda za semiconductor na electronics kugirango zirinde abatwara wafer, shingiro nibintu bishyushya ibintu bitangirika kandi byangiza. Ipfunyika rya SiC irakwiriye kandi ku itanura rya vacuum no gushyushya icyitegererezo muri vacuum nyinshi, reaction na ogisijeni.
Ubuso buhanitse bwa SiC
Ni ubuhe buryo bwo gutwikira SiC?
Agace gato ka karubide ya silicon ishyirwa hejuru ya substrate ukoreshejeCVD (Kubika imyuka ya chimique). Ubusanzwe kubitsa bikorwa mubushyuhe bwa 1200-1300 ° C kandi imyitwarire yo kwagura ubushyuhe bwibikoresho bya substrate igomba guhuzwa nigitambaro cya SiC kugirango igabanye ubushyuhe bwumuriro.
CVD SIC Coating FILM INYIGISHO ZA CRYSTAL
Imiterere yumubiri ya SiC igaragara cyane cyane mubushyuhe bwayo bwo hejuru, ubukana, kurwanya ruswa hamwe nubushyuhe bwumuriro.
Ibipimo bisanzwe bifatika ni nkibi bikurikira:
Gukomera: Ububiko bwa SiC mubusanzwe bufite ubukana bwa Vickers murwego rwa 2000-2500 HV, bubaha kwambara cyane no kurwanya ingaruka mubikorwa byinganda.
Ubucucike: Ububiko bwa SiC mubusanzwe bufite ubucucike bwa 3.1-3.2 g / cm³. Ubucucike buri hejuru bugira uruhare mubukanishi no kuramba.
Amashanyarazi: Ipfunyika ya SiC ifite ubushyuhe bwinshi bwo hejuru, mubusanzwe buri hagati ya 120-200 W / mK (kuri 20 ° C). Ibi biratanga ubushyuhe bwiza bwubushyuhe bwo hejuru kandi bigatuma bikenerwa cyane cyane kubikoresho byo gutunganya ubushyuhe mu nganda zikoresha igice.
Ingingo yo gushonga: karbide ya silicon ifite aho ishonga igera kuri 2730 ° C kandi ifite ubushyuhe buhebuje bwubushyuhe bukabije.
Coefficient yo Kwagura Ubushyuhe: Ipitingi ya SiC ifite coeffisiyeti ntoya yo kwagura ubushyuhe (CTE), mubisanzwe murwego rwa 4.0-4.5 µm / mK (muri 25-1000 ℃). Ibi bivuze ko ituze ryayo ari ryiza hejuru yubushyuhe butandukanye.
Kurwanya ruswa: Ipitingi ya SiC irwanya cyane kwangirika muri aside ikomeye, alkali na okiside, cyane cyane iyo ukoresheje acide ikomeye (nka HF cyangwa HCl), kurwanya kwangirika kwabo kurenze kure cyane ibyuma bisanzwe.
Ibikoresho bya SiC
Ipfunyika rya SiC rikoreshwa kenshi mugutezimbere ruswa, kurwanya ubushyuhe bwinshi, hamwe no kurwanya isuri ya plasma. Porogaramu isanzwe isanzwe ikubiyemo ibi bikurikira:
| Ubwoko bwa Substrate | Impamvu yo gusaba | Gukoresha bisanzwe |
| Igishushanyo | - Imiterere yumucyo, imiyoboro myiza yubushyuhe - Ariko byoroshye kwangirika na plasma, bisaba kurinda SiC | Ibice bya vacuum, ubwato bwa grafite, plasma etching tray, nibindi. |
| Quartz (Quartz / SiO₂) | - Isuku ryinshi ariko ryoroshye - Gupfunyika byongera plasma irwanya isuri | Ibice bya CVD / PECVD |
| Ubukorikori (nka alumina Al₂O₃) | - Imbaraga nyinshi nuburyo buhamye - Ipitingi itezimbere kwangirika kwubutaka | Urutonde rwicyumba, ibikoresho, nibindi |
| Ibyuma (nka molybdenum, titanium, nibindi) | - Amashanyarazi meza ariko arwanya ruswa - Igipfundikizo gitezimbere ubuso | Ibice byihariye byerekana ibintu |
| Silicon karbide yacumuye umubiri (SiC bulk) | - Kubidukikije bifite ibisabwa byinshi kubikorwa bigoye - Gupfuka birusheho kunoza isuku no kurwanya ruswa | Ibice byo hejuru-CVD / ALD bigize ibice |
Ibicuruzwa bitwikiriye SiC bikoreshwa cyane mubice bikurikira
Ibicuruzwa bitwikiriye SiC bikoreshwa cyane mugutunganya igice cya kabiri, cyane cyane mubushyuhe bwinshi, kwangirika kwinshi hamwe nibidukikije bya plasma. Ibikurikira nuburyo bukuru bwo gusaba cyangwa imirima hamwe nibisobanuro bigufi:
| Igikorwa cyo gusaba / umurima | Ibisobanuro muri make | Imikorere ya Silicon Carbide |
| Kurwara plasma (Etching) | Koresha imyuka ya fluor cyangwa chlorine kugirango wohereze icyitegererezo | Irinde isuri ya plasma kandi wirinde kwanduza ibyuma nicyuma |
| Imyuka ya chimique (CVD / PECVD) | Gushyira oxyde, nitride nizindi firime zoroshye | Irinde imyuka ibora kandi wongere ubuzima bwibigize |
| Icyumba kibika imyuka (PVD) icyumba | Ingufu nyinshi zingirakamaro mugihe cyo gutwikira | Kunoza kurwanya isuri no kurwanya ubushyuhe bwicyumba cya reaction |
| MOCVD inzira (nko gukura kwa epitaxial SiC) | Igihe kirekire reaction munsi yubushyuhe bwinshi hamwe nikirere cya hydrogène cyangirika | Komeza ibikoresho bihamye kandi wirinde kwanduza kristu ikura |
| Uburyo bwo kuvura ubushyuhe (LPCVD, diffusion, annealing, nibindi) | Mubisanzwe bikorwa mubushyuhe bwinshi na vacuum / ikirere | Rinda ubwato bwa grafite na tray okiside cyangwa ruswa |
| Umwikorezi wa Wafer / chuck (Gukoresha Wafer) | Igishushanyo mbonera cyo kwimura wafer cyangwa inkunga | Mugabanye kumeneka ibice kandi wirinde kwanduza |
| ALD ibice bigize urugereko | Gusubiramo kenshi kandi neza kugenzura atomic layer | Igifuniko gikomeza icyumba gisukuye kandi gifite imbaraga zo kurwanya ruswa kubibanjirije |
Kuki uhitamo ingufu za VET?
VET Ingufu nu ruganda ruza ku isonga, guhanga udushya no kuyobora ibicuruzwa bitwikiriye SiC mu Bushinwa, ibicuruzwa nyamukuru bitwikiriye SiC birimoumutwara wafer hamwe na SiC, SiCepitaxial susceptor, SiC yashushanyije impeta ya grafite, Igice cy'ukwezi igice hamwe na SiC, SiC yatwikiriye karubone-karubone, SiC yatwikiriye ubwato bwa wafer, Ubushyuhe bwa SiC, n'ibindi. Dutegereje tubikuye ku mutima kuba umufatanyabikorwa wawe w'igihe kirekire mu Bushinwa.
Niba ufite ibibazo cyangwa ukeneye ibisobanuro birambuye, nyamuneka ntutindiganye kutwandikira.
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Igihe cyo kohereza: Ukwakira-18-2024