Kuyini ukumbozwa kwe-sic? – AMANDLA E-VET

I-Silicon Carbideiyinhlanganisela eqinile equkethe i-silicon ne-carbon, futhi itholakala emvelweni njenge-moissanite yamaminerali engavamile kakhulu. Izinhlayiya ze-silicon carbide zingahlanganiswa ngokusila ukuze zenze i-ceramics eqinile kakhulu, esetshenziswa kabanzi ekusetshenzisweni okudinga ukuqina okuphezulu, ikakhulukazi ekuqhubekeni kwe-semiconductor.

Isakhiwo sama-molecule e-silicon carbide

Isakhiwo somzimba se-SiC

 

Kuyini i-SiC Coating?

I-SiC coating iyi-silicon carbide ehlanganisiwe, engagugi, enokugqwala okuphezulu nokumelana nokushisa kanye nokushisa okuhle kakhulu. Le-SiC coating ehlanzekile kakhulu isetshenziswa kakhulu embonini ye-semiconductor kanye ne-electronics ukuvikela abathwali be-wafer, izisekelo kanye nezinto zokushisa ezindaweni ezigqwalayo nezisabelayo. I-SiC coating ifaneleka futhi kuma-vacuum furnace kanye nokushisa kwesampula ezindaweni ezigqwalayo, ezisabelayo kanye ne-oxygen.

Ubuso obucwebezelayo obuhlanzekile kakhulu (2)

Ubumsulwa obuphezulu bokumboza kwe-SiC

 

Iyini inqubo yokumboza i-SiC?

 

Ungqimba oluncane lwe-silicon carbide lubekwa phezu kwe-substrate kusetshenziswaI-CVD (Ukususwa Komusi Wekhemikhali)Ukufakwa kwe-substrate kuvame ukwenziwa emazingeni okushisa angu-1200-1300°C futhi ukuziphatha kokukhula kokushisa kwezinto ezingaphansi komhlaba kufanele kuhambisane nokugqoka kwe-SiC ukuze kuncishiswe ukucindezeleka kokushisa.

ISAKHIWO SIKAKHRISTAL SEFILM YE-CVD SIC

ISAKHIWO SIKAKHRISTAL SEFILM ESINAMATHELA E-CVD SIC

Izakhiwo ezibonakalayo ze-SiC coating zibonakala kakhulu ekumelaneni kwayo nokushisa okuphezulu, ubulukhuni, ukumelana nokugqwala kanye nokuqhuba kwayo ukushisa.

 

Imingcele evamile yomzimba ivame ukuba kanje:

 

Ubulukhuni: Isembozo se-SiC ngokuvamile sinobunzima be-Vickers obuphakathi kuka-2000-2500 HV, okubenza bangakwazi ukuguguleka kakhulu futhi bamelane nokuphazamiseka kwezimboni.

Ubuningi: Izembozo ze-SiC ngokuvamile zinobukhulu obungu-3.1-3.2 g/cm³. Ubukhulu obuphezulu bunegalelo emandleni okusebenza nasekuqineni kwezembozo.

Ukuqhuba kwe-thermal: Izembozo ze-SiC zinomoya wokushisa ophezulu, ngokuvamile ziphakathi kuka-120-200 W/mK (ku-20°C). Lokhu kuyinika umoya wokushisa omuhle ezindaweni zokushisa eziphakeme futhi kuyenza ifaneleke kakhulu imishini yokwelapha ukushisa embonini ye-semiconductor.

Indawo yokuncibilika: i-silicon carbide inezinga lokuncibilika elingaba ngu-2730°C futhi inamandla okuqina okushisa kakhulu emazingeni okushisa aphezulu kakhulu.

Isilinganiso Sokwanda Kokushisa: Izembozo ze-SiC zine-coefficient ephansi yokwanda kokushisa (i-CTE), ngokuvamile ebangeni elingu-4.0-4.5 µm/mK (ku-25-1000℃). Lokhu kusho ukuthi ukuzinza kwayo kobukhulu kuhle kakhulu kunokwehluka okukhulu kwezinga lokushisa.

Ukumelana nokugqwala: Izembozo ze-SiC zimelana kakhulu nokugqwala ezindaweni ezinamandla ze-asidi, i-alkali kanye ne-oxidizing, ikakhulukazi uma kusetshenziswa ama-asidi aqinile (njenge-HF noma i-HCl), ukumelana kwazo nokugqwala kudlula kakhulu okokwezinto zensimbi ezivamile.

 

Isisekelo sesicelo sokumboza se-SiC

 

Isembozo se-SiC sivame ukusetshenziselwa ukuthuthukisa ukumelana nokugqwala, ukumelana nokushisa okuphezulu, kanye nokumelana nokuguguleka kwe-plasma kwe-substrate. I-substrate ezisetshenziswa njalo zifaka okulandelayo:

 

Uhlobo lwe-substrate Isizathu sesicelo Ukusetshenziswa okuvamile
I-Graphite - Isakhiwo esikhanyayo, ukuhanjiswa okuhle kokushisa

- Kodwa iguguleka kalula yi-plasma, idinga ukuvikelwa kokumbozwa kwe-SiC

Izingxenye zegumbi lokuhlanza, izikebhe ze-graphite, amathreyi okusika nge-plasma, njll.
I-Quartz (i-Quartz/i-SiO₂) - Ubumsulwa obuphezulu kodwa buqothuka kalula

- Ukugqoka kuthuthukisa ukumelana nokuguguleka kwe-plasma

Izingxenye zegumbi le-CVD/PECVD
Izinto zobumba (njenge-alumina Al₂O₃) - Amandla aphezulu kanye nesakhiwo esizinzile

- Ukugqoka kuthuthukisa ukumelana nokugqwala komhlaba

Ukufakwa kwegumbi, izinto ezisetshenziswayo, njll.
Izinsimbi (njenge-molybdenum, i-titanium, njll.) - Ukushisa okuhle kodwa ukumelana nokugqwala okubi

- Ukugqoka kuthuthukisa ukuzinza kobuso

Izingxenye ezikhethekile zokusabela kwenqubo
Umzimba we-silicon carbide osikiwe (i-SiC bulk) - Kwezindawo ezinezidingo eziphezulu zezimo zokusebenza eziyinkimbinkimbi

- Ukugqoka kuthuthukisa ubumsulwa nokumelana nokugqwala

Izingxenye zegumbi le-CVD/ALD ezisezingeni eliphezulu

 

Imikhiqizo embozwe yi-SiC ivame ukusetshenziswa ezindaweni ezilandelayo ze-semiconductor

 

Imikhiqizo yokumboza i-SiC isetshenziswa kabanzi ekucubungulweni kwe-semiconductor, ikakhulukazi ezindaweni zokushisa eziphakeme, ukugqwala okuphezulu kanye nezindawo eziqinile ze-plasma. Okulandelayo yizinqubo noma amasimu amaningi amakhulu okusetshenziswa kanye nezincazelo ezimfushane:

 

Inqubo/insimu yesicelo Incazelo emfushane Umsebenzi we-Silicon Carbide Coating
Ukuqopha nge-plasma (Ukuqopha) Sebenzisa amagesi asekelwe ku-fluorine noma ku-chlorine ukuze udlulise amaphethini Melana nokuguguleka kwe-plasma futhi uvimbele ukungcoliswa kwezinhlayiya nensimbi
Ukufakwa komusi wamakhemikhali (i-CVD/PECVD) Ukufakwa kwe-oxide, i-nitride namanye amafilimu amancane Melana namagesi abangela ukubola futhi wandise impilo yezingxenye
Igumbi lokufaka umusi ongokoqobo (i-PVD) Ukuqhuma kwezinhlayiya ezinamandla aphezulu ngesikhathi senqubo yokumboza Thuthukisa ukumelana nokuguguleka kanye nokumelana nokushisa kwegumbi lokusabela
Inqubo ye-MOCVD (njengokukhula kwe-SiC epitaxial) Ukusabela kwesikhathi eside ngaphansi kokushisa okuphezulu kanye nomoya oqothulayo we-hydrogen ephezulu Gcina imishini izinzile futhi uvimbele ukungcoliswa kwamakristalu akhulayo
Inqubo yokwelapha ukushisa (i-LPCVD, ukusabalala, ukufakelwa, njll.) Ngokuvamile kwenziwa ekushiseni okuphezulu kanye ne-vacuum/emkhathini Vikela izikebhe ze-graphite namathileyi ekungcoleni noma ekugqwaleni
Isithwali/ichukhi ye-wafer (Ukuphathwa kwe-wafer) Isisekelo se-graphite sokudlulisa noma ukusekela i-wafer Nciphisa ukuchitheka kwezinhlayiya futhi ugweme ukungcola kokuthintana
Izingxenye zegumbi le-ALD Lawula ngokuphindaphindiwe nangokunembile ukufakwa kwesendlalelo se-athomu Isembozo sigcina igumbi lihlanzekile futhi simelana nokugqwala okuphezulu nezinto ezingaphambi kwaso

I-Silicon Carbide Coated Graphite Substrate

 

Kungani ukhethe i-VET Energy?

 

I-VET Energy ingumkhiqizi ohamba phambili, umsunguli kanye nomholi wemikhiqizo yokumboza i-SiC eShayina, imikhiqizo yokumboza eyinhloko ye-SiC ifaka phakathiisithwali se-wafer esine-SiC coating, Imbozwe nge-SiCi-epitaxial susceptor, Indandatho ye-graphite ehlanganiswe ne-SiC, Izingxenye ze-half-moon ezine-SiC coating, Inhlanganisela yekhabhoni-khabhoni ehlanganiswe ne-SiC, Isikebhe se-wafer esimbozwe yi-SiC, Isifudumezi esimbozwe yi-SiC, njll. I-VET Energy izibophezele ekuhlinzekeni imboni ye-semiconductor ngezixazululo zobuchwepheshe kanye nemikhiqizo eziphelele, futhi isekela izinsizakalo zokwenza ngokwezifiso. Silangazelela ngobuqotho ukuba ngumlingani wakho wesikhathi eside eShayina.

Uma unemibuzo noma udinga imininingwane eyengeziwe, sicela ungangabazi ukuxhumana nathi.

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Isikhathi sokuthunyelwe: Okthoba-18-2024
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