Iyini i-sic coating?

I-Silicon Carbideiyinhlanganisela eqinile equkethe i-silicon ne-carbon, futhi itholakala emvelweni njenge-mineral moissanite engavamile kakhulu. Izinhlayiya ze-silicon carbide zingahlanganiswa ndawonye ngokucwilisa ukuze zenze izitsha zobumba eziqine kakhulu, ezisetshenziswa kabanzi ezinhlelweni ezidinga ukuqina okuphezulu, ikakhulukazi kudwendwe lwe-semiconductor.

Isakhiwo somzimba se-SiC

I-SiC coating iwugqinsi, ukumelana ne-silicon carbide enamathelayo enokugqwala okuphezulu nokumelana nokushisa kanye nokuhamba kahle kwe-thermal. Lokhu kucwebezela okuphezulu kwe-SiC kusetshenziswa ikakhulukazi ezimbonini ze-semiconductor neze-elekthronikhi ukuze kuvikelwe abathwali be-wafer, izisekelo nezinto zokushisisa ezindaweni ezibolayo nezisebenzayo. I-SiC coating ibuye ifanelekele izithando zomlilo kanye nokufudumeza kwesampula ku-vacuum ephezulu, indawo esebenzayo ne-oxygen.

Ukuhlanzeka okuphezulu kwe-SiC enamathela endaweni

Iyini inqubo yokuhlanganisa i-SiC?

Ungqimba oluncane lwe-silicon carbide lufakwa phezu kwe-substrate kusetshenziswaI-CVD (Chemical Vapor Deposition). I-deposition ivame ukwenziwa emazingeni okushisa ka-1200-1300 ° C futhi ukuziphatha okushisayo okukhulayo kwe-substrate impahla kufanele kuhambisane ne-SiC coating ukuze kuncishiswe ukucindezeleka okushisayo.

I-CVD SIC FILM CRISTAL STRUCTURE

I-CVD SIC Coating FILM CRYSTAL STRUCTURE

Izakhiwo ezingokomzimba ze-SiC coating zibonakala ikakhulukazi emazingeni aphezulu okushisa, ukuqina, ukumelana nokugqwala kanye nokuhamba kokushisa.

Amapharamitha ajwayelekile angokomzimba ngokuvamile ami kanje:

Ukuqina: I-SiC coating ngokuvamile ine-Vickers Hardness ebangeni elingu-2000-2500 HV, okubanikeza ukuguga okuphezulu kakhulu kanye nokumelana nomthelela ezinhlelweni zokusebenza zezimboni.

Ukuminyana: Izembatho ze-SiC ngokuvamile ziba nokuminyana okungu-3.1-3.2 g/cm³. Ukuminyana okuphezulu kunomthelela emandleni emishini kanye nokuqina kwe-coating.

I-Thermal conductivity: Izingubo ze-SiC zine-conductivity ephezulu yokushisa, ngokuvamile ebangeni le-120-200 W / mK (ku-20 ° C). Lokhu kuyinikeza ukuhanjiswa okuhle kwe-thermal ezindaweni zokushisa okuphezulu futhi kuyenza ifaneleke kakhulu imishini yokwelapha ukushisa embonini ye-semiconductor.

Iphoyinti lokuncibilika: I-silicon carbide inendawo yokuncibilika ecishe ibe ngu-2730°C futhi inokuzinza okuhle kakhulu kokushisa emazingeni okushisa adlulele.

I-Coefficient of Thermal Expansion: Izigqoko ze-SiC zine-coefficient ephansi yomugqa yokunwetshwa kwe-thermal (CTE), ngokuvamile ebangeni elingu-4.0-4.5 µm/mK (ku-25-1000℃). Lokhu kusho ukuthi ukuzinza kwayo kwe-dimensional kuhle kakhulu kunomehluko omkhulu wezinga lokushisa.

Ukumelana nokugqwala: Izindwangu ze-SiC zimelana kakhulu nokugqwala ezindaweni ezine-asidi eqinile, i-alkali ne-oxidizing, ikakhulukazi uma kusetshenziswa ama-asidi aqinile (afana ne-HF noma i-HCl), ukumelana nokugqwala kwawo kudlula kude lokho kwezinto zensimbi ezivamile.

I-substrate yokufaka isicelo se-SiC

I-SiC coating ivame ukusetshenziselwa ukuthuthukisa ukumelana nokugqwala, ukumelana nokushisa okuphezulu, nokumelana nokuguguleka kwe-plasma kwe-substrate. Ama-substrates asetshenziswayo ajwayelekile afaka okulandelayo:

Uhlobo lwe-substrate	Isizathu sohlelo lokusebenza	Ukusetshenziswa okuvamile
I-graphite	- Isakhiwo esikhanyayo, ukuguquguquka okuhle kwe-thermal - Kodwa ukugqwala kalula plasma, kudinga SiC enamathela ukuvikelwa	Izingxenye zegumbi le-vacuum, izikebhe ze-graphite, amathreyi e-plasma etching, njll.
I-Quartz (Quartz/SiO₂)	- Ukuhlanzeka okuphezulu kodwa kugqwalile kalula - Ukugqoka kuthuthukisa ukumelana nokuguguleka kwe-plasma	Izingxenye zegumbi le-CVD/PECVD
I-Ceramics (njenge-alumina Al₂O₃)	- Amandla aphezulu kanye nesakhiwo esizinzile - Ukugqoka kuthuthukisa ukumelana nokugqwala kwendawo	Umugqa wegumbi, izinto ezilungiswayo, njll.
Izinsimbi (njenge-molybdenum, i-titanium, njll.)	- I-thermal conductivity enhle kodwa ukumelana nokugqwala okubi - Ukugqoka kuthuthukisa ukuzinza kwendawo	Izingxenye zenqubo ekhethekile yokusabela
I-Silicon carbide sintered body (SiC bulk)	- Ngezindawo ezinezidingo eziphezulu zezimo zokusebenza eziyinkimbinkimbi - Ukumboza kuthuthukisa ngokwengeziwe ubumsulwa nokumelana nokugqwala	Izingxenye zegumbi eliphezulu le-CVD/ALD

Imikhiqizo ehlanganisiwe ye-SiC ivame ukusetshenziswa ezindaweni ezilandelayo ze-semiconductor

Imikhiqizo yokugqoka ye-SiC isetshenziswa kabanzi ekucubunguleni i-semiconductor, ikakhulukazi ekushiseni okuphezulu, ukugqwala okuphezulu kanye nezindawo eziqinile ze-plasma. Okulandelayo yizinqubo ezimbalwa ezinkulu zohlelo lokusebenza noma izinkambu nezincazelo ezimfushane:

Inqubo/inkambu yohlelo lokusebenza	Incazelo emfushane	Umsebenzi we-Silicon Carbide Coating
Ukufakwa kwe-Plasma (Ukukhipha)	Sebenzisa i-fluorine noma amagesi asekelwe ku-chlorine ukuze udlulise iphethini	Melana nokuguguleka kwe-plasma futhi uvimbele ukungcoliswa kwezinhlayiyana nensimbi
I-Chemical vapor deposition (CVD/PECVD)	Ukufakwa kwe-oxide, i-nitride namanye amafilimu amancane	Melana namagesi aqala ukubola futhi ukhuphule impilo yengxenye
Igumbi le-Physical vapor deposition (PVD).	Ukuqhuma kwezinhlayiyana zamandla aphezulu ngesikhathi senqubo yokumboza	Thuthukisa ukumelana nokuguguleka nokumelana nokushisa kwegumbi lokusabela
Inqubo ye-MOCVD (efana nokukhula kwe-SiC epitaxial)	Ukusabela kwesikhathi eside ngaphansi kwezinga lokushisa eliphezulu kanye ne-hydrogen corrosive atmosphere	Gcina ukuqina kwemishini futhi uvimbele ukungcoliswa kwamakristalu akhulayo
Inqubo yokwelapha ukushisa (LPCVD, diffusion, annealing, njll.)	Ngokuvamile kwenziwa ezingeni lokushisa eliphezulu kanye vacuum/atmosphere	Vikela izikebhe namathreyi e-graphite ekugxumeni noma ekugqwaleni
Isithwali se-wafer/chuck (Ukuphatha i-Wafer)	Isisekelo se-graphite sokudluliswa kwe-wafer noma ukusekela	Yehlisa ukuchitheka kwezinhlayiyana futhi ugweme ukungcoliswa kokuxhumana
Izingxenye zegumbi le-ALD	Lawula ngokuphindaphindiwe nangokunembile ukubekwa kwesendlalelo se-athomu	I-coating igcina igumbi lihlanzekile futhi linokumelana nokugqwala okuphezulu kuma-precursors

Kungani ukhethe i-VET Energy?

I-VET Energy ingumkhiqizi oholayo, umsunguli kanye nomholi wemikhiqizo yokuhlanganisa ye-SiC e-China, imikhiqizo eyinhloko yokuhlanganisa ye-SiC ihlanganisaI-wafer carrier ene-SiC coating, SiC camerai-epitaxial susceptor, I-SiC eboshwe indandatho yegraphite, Izingxenye zenyanga ene-SiC coating, I-SiC ehlanganiswe ne-carbon-carbon composite, I-SiC coated wafer isikebhe, I-heater ehlanganisiwe ye-SiC, njll. I-VET Energy izibophezele ekuhlinzekeni imboni ye-semiconductor ngobuchwepheshe bokugcina nezixazululo zemikhiqizo, futhi isekela izinsizakalo zokwenza ngokwezifiso. Sibheke ngabomvu ukuba uzakwethu wesikhathi eside e-China.