Isilicon Carbideyikhompawundi enzima equlethe i-silicon kunye nekhabhoni, kwaye ifumaneka kwindalo njenge-mineral enqabileyo kakhulu i-moissanite. Iincinci ze-silicon ze-carbide zinokudibaniswa kunye ngokudibanisa ukwenza ii-ceramics ezinzima kakhulu, ezisetyenziswa ngokubanzi kwizicelo ezifuna ukuqina okuphezulu, ngakumbi kwi-procession semiconductor.
Ubume bomzimba beSiC
Yintoni iSiC Coating?
Ukwaleka kwe-SiC yi-silicon carbide eshinyeneyo, ekwaziyo ukumelana nokunxitywa kwe-corrosion ephezulu kunye nokumelana nobushushu kunye nokuhamba kakuhle kwe-thermal. Olu tyaba oluphezulu lwe-SiC lusetyenziswa ikakhulu kwi-semiconductor kunye namashishini e-elektroniki ukukhusela abathwali be-wafer, iziseko kunye nezinto zokufudumeza kwiindawo ezinobungozi kunye nezisebenzayo. I-coating ye-SiC ikwafanelekile kwiziko lokufunxa kunye nokufudumeza isampulu kwi-vacuum ephezulu, indawo esebenzayo kunye ne-oxygen.
Ukucoceka okuphezulu komgangatho we-SiC wokugquma
Yintoni inkqubo yokugquma iSiC?
Umaleko omncinci we-silicon carbide ufakwe kumphezulu we-substrate usebenzisaI-CVD (Ukubekwa komphunga weChemical). I-Deposition idla ngokuqhutyelwa kumaqondo okushisa e-1200-1300 ° C kunye nokuziphatha kokwandisa i-thermal ye-substrate impahla kufuneka ihambelane ne-SiC yokugqoka ukunciphisa uxinzelelo lwe-thermal.
CVD SIC Coating FILM UKWAKHIWA KWEKHRISTU
Iimpawu ezibonakalayo ze-SiC coating zibonakaliswa ikakhulu ekuxhathiseni ubushushu obuphezulu, ukuqina, ukumelana nokugqwala kunye nokuhanjiswa kwe-thermal.
Ii parameters ezibonakalayo zihlala ngolu hlobo lulandelayo:
Ukuqina: I-coating ye-SiC ngokuqhelekileyo ine-Vickers Hardness kuluhlu lwe-2000-2500 HV, olubanika ukunxiba okuphezulu kakhulu kunye nokuchasana kwempembelelo kwizicelo zoshishino.
Ukuxinana: Iingubo zeSiC zihlala zinoxinzelelo lwe-3.1-3.2 g/cm³. Ubuninzi obuphezulu bunegalelo kumandla omatshini kunye nokuqina kwengubo.
I-Thermal conductivity: Iingubo ze-SiC zine-conductivity ephezulu ye-thermal, ngokuqhelekileyo kuluhlu lwe-120-200 W / mK (kwi-20 ° C). Oku kunika i-conductivity efanelekileyo ye-thermal kwiindawo eziphezulu zokushisa kwaye yenza ukuba ilungele ngokukodwa izixhobo zonyango lobushushu kwishishini le-semiconductor.
Indawo yokunyibilika: I-silicon carbide inendawo yokunyibilika malunga ne-2730 ° C kwaye inozinzo oluhle kakhulu lwe-thermal kumaqondo obushushu agqithisileyo.
I-Coefficient yoKwandiswa kweThermal: Iingubo ze-SiC zine-coefficient ephantsi yomgca wokwandisa i-thermal (CTE), ngokuqhelekileyo kuluhlu lwe-4.0-4.5 µm / mK (kwi-25-1000℃). Oku kuthetha ukuba uzinzo lwayo lwe-dimensional lubalaseleyo kunomahluko omkhulu wobushushu.
Ukumelana nokubola: Iingubo ze-SiC zixhathisa ngokugqithiseleyo kwi-corrosion kwi-asidi eqinile, i-alkali kunye neendawo ze-oxidizing, ngakumbi xa usebenzisa i-acids eqinile (efana ne-HF okanye i-HCl), ukuxhathisa kwabo kwe-corrosion kudlula kakhulu kwizinto eziqhelekileyo zetsimbi.
I-substrate yesicelo sokugquma iSiC
Ukugquma kwe-SiC kuhlala kusetyenziselwa ukuphucula ukuxhathisa kwe-corrosion, ukumelana nobushushu obuphezulu, kunye nokumelana nokukhukuliseka kwe-plasma ye-substrate. Iisubstrates zesicelo eziqhelekileyo ziquka oku kulandelayo:
| Uhlobo lweSubstrate | Isizathu sesicelo | Ukusetyenziswa okuqhelekileyo |
| Igraphite | - Isakhiwo sokukhanya, ukuhanjiswa kakuhle kwe-thermal - Kodwa i-corrored ngokulula yi-plasma, ifuna ukukhuselwa kwe-SiC | Iinxalenye zegumbi lokucoca, izikhephe zegraphite, iitreyi zeplasma etching, njl. |
| Iquartz (Quartz/SiO₂) | - Ucoceko oluphezulu kodwa ludlaka lula - Ukugquma kwandisa ukuxhathisa ukhukuliseko lweplasma | Amalungu egumbi leCVD/PECVD |
| IiCeramics (ezifana ne-alumina Al₂O₃) | - Amandla aphezulu kunye nesakhiwo esizinzileyo - Ukwaleka kuphucula ukuxhathisa umhlwa | Ukwakhiwa kwegumbi, izixhobo, njl. |
| Iintsimbi (ezifana ne-molybdenum, i-titanium, njl.) | -Ukuqhuba kakuhle kwe-thermal kodwa ukunganyangeki komhlwa - Ukugquma kuphucula ukuzinza komphezulu | Amacandelo okusabela kwenkqubo ekhethekileyo |
| I-silicon carbide sintered body (SiC bulk) | - Kwiindawo ezineemfuno eziphezulu zeemeko zokusebenza ezinzima - Ukugquma kuphucula ngakumbi ubunyulu kunye nokumelana nomhlwa | Amacandelo egumbi leCVD/ALD ephezulu |
Iimveliso ezigqunywe nge-SiC zisetyenziswa ngokuqhelekileyo kwezi ndawo zilandelayo ze-semiconductor
Iimveliso zokugquma ze-SiC zisetyenziswa ngokubanzi kwi-semiconductor processing, ikakhulu kubushushu obuphezulu, ukubola okuphezulu kunye neendawo eziqinileyo zeplasma. Oku kulandelayo ziinkqubo ezininzi eziphambili zesicelo okanye amasimi kunye neenkcazo ezimfutshane:
| Inkqubo yesicelo/ibala | Inkcazo emfutshane | Umsebenzi weSilicon Carbide Coating |
| Ukufakwa kwi-Plasma (Ukuqhafaza) | Sebenzisa i-fluorine okanye i-chlorine-based gases ukuhanjiswa kwepateni | Ukuxhathisa ukukhukuliseka kweplasma kunye nokuthintela ukungcoliseka kwamasuntswana kunye nesinyithi |
| Ukubekwa komphunga kwikhemikhali (CVD/PECVD) | Ukufakwa kwe-oxide, i-nitride kunye nezinye iifilimu ezincinci | Yixhathise igesi ezonakalisayo kunye nokwandisa ubomi becandelo |
| Indawo yokubeka umphunga (PVD) igumbi | I-high-energy particle bombardment ngexesha lenkqubo yokugubungela | Ukuphucula ukuxhathisa ukhukuliseko kunye nokumelana nobushushu begumbi lokuphendula |
| Inkqubo ye-MOCVD (efana nokukhula kwe-SiC epitaxial) | Ukusabela kwexesha elide phantsi kobushushu obuphezulu kunye ne-hydrogen ephezulu e-corrosive atmosphere | Gcina uzinzo lwezixhobo kwaye uthintele ukungcoliseka kweekristale ezikhulayo |
| Inkqubo yonyango lobushushu (LPCVD, diffusion, annealing, etc.) | Ngokuqhelekileyo iqhutyelwa kwiqondo lokushisa eliphezulu kunye ne-vacuum / atmosphere | Khusela izikhephe zegraphite kunye neetreyi kwi-oxidation okanye i-corrosion |
| Umthwali weWafer / i-chuck (Ukuphatha iWafer) | Isiseko segraphite sokudluliselwa kwe-wafer okanye inkxaso | Ukunciphisa ukuchithwa kwamasuntswana kwaye ugweme ukungcoliseka koqhagamshelwano |
| Amacandelo egumbi le-ALD | Ukulawula ngokuphindaphindiweyo kunye ngokuchanekileyo ukubekwa komaleko weathom | I-coating igcina igumbi licocekile kwaye linokuxhathisa okuphezulu kwi-corrosion kwi-precursors |
Kutheni ukhetha Amandla eVET?
I-VET Energy ngumvelisi okhokelayo, umqalisi kunye nenkokeli yeemveliso zokwaleka ze-SiC eTshayina, ezona mveliso ziphambili zokugquma iSiC ziquka.Isithwali se-wafer esine-SiC coating, SiC coatedi-epitaxial susceptor, Iringi yegraphite eqatywe ngeSiC, Inxalenye yesiqingatha senyanga ene-SiC yokwambathisa, SiC coated carbon-carbon composite, Isikhephe esicatshulwe yiSiC, Isifudumezi esigqunywe yiSiC, njl. njl. Sijonge ngokunyanisekileyo ukuba liqabane lakho lexesha elide eTshayina.
Ukuba unayo nayiphi na imibuzo okanye ufuna iinkcukacha ezongezelelweyo, nceda ungalibazisi ukuqhagamshelana nathi.
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Ixesha lokuposa: Oct-18-2024