Yintoni ukugquma? – AMANDLA E-VET

iSilicon Carbideyi-compound eqinileyo equlethe i-silicon kunye ne-carbon, kwaye ifumaneka kwindalo njenge-moissanite yeminerali enqabileyo kakhulu. Amasuntswana e-silicon carbide anokudityaniswa ngokusila ukuze enze ii-ceramics eziqinileyo kakhulu, ezisetyenziswa kakhulu kwizicelo ezifuna ukuqina okuphezulu, ingakumbi kwi-semiconductor processing.

Ulwakhiwo lweSiC

Yintoni iSiC Coating?

I-SiC coating yi-silicon carbide coating exineneyo, engagugiyo enokumelana nokugqwala okuphezulu kunye nobushushu kunye nokuqhuba kakuhle kobushushu. Le SiC coating ecocekileyo kakhulu isetyenziswa kakhulu kumashishini e-semiconductor kunye ne-elektroniki ukukhusela abathwali be-wafer, iziseko kunye nezinto zokufudumeza kwiindawo ezirhabaxa nezisabelayo. I-SiC coating ikwafanelekile kwii-vacuum flanks kunye nokufudumeza isampuli kwiindawo ezirhabaxa eziphezulu, ezisabelayo kunye ne-oxygen.

Ubunyulu obuphezulu bomphezulu we-SiC

Iyintoni inkqubo yokugquma iSiC?

Umaleko omncinci we-silicon carbide ubekwa phezu komphezulu we-substrate usebenzisaI-CVD (Ukususwa koMphunga weKhemikhali)Ukufakwa kwe-substrate kudla ngokwenziwa kumaqondo obushushu angama-1200-1300°C kwaye indlela yokwandisa ubushushu bezinto ezisetyenziswa kwi-substrate kufuneka ihambelane ne-SiC coating ukunciphisa uxinzelelo lobushushu.

Ulwakhiwo lwekristale yefilimu yeCVD SIC

Ulwakhiwo lweCrystal yeFilimu yokuGcoba iCVD SIC

Iimpawu ezibonakalayo ze-SiC coating zibonakala kakhulu kukumelana kwayo nobushushu obuphezulu, ubulukhuni, ukumelana nokugqwala kunye nokuqhuba kobushushu.

Iiparameters eziqhelekileyo zomzimba zihlala zilandelayo:

Ukuqina: I-SiC coating idla ngokuba ne-Vickers Hardness ephakathi kwe-2000-2500 HV, nto leyo ebanika ukuguguleka okuphezulu kakhulu kunye nokumelana nempembelelo kwizicelo zoshishino.

Uxinano: Iingubo zeSiC zihlala zinobunzima obuyi-3.1-3.2 g/cm³. Ubunzima obuphezulu bunegalelo kumandla oomatshini kunye nokuqina kwengubo.

Ukuqhuba kobushushu: Iingubo zeSiC zinomoya ophezulu wokuqhuba ubushushu, ngesiqhelo ziphakathi kwe-120-200 W/mK (kwi-20°C). Oku kuyinika umoya omhle wokuqhuba ubushushu kwiindawo ezinobushushu obuphezulu kwaye kuyenza ifaneleke ngakumbi kwizixhobo zonyango lobushushu kwishishini le-semiconductor.

Indawo yokunyibilika: i-silicon carbide inendawo yokunyibilika emalunga nama-2730°C kwaye izinzile kakhulu kubushushu obuphezulu.

Ukwanda kwe-Thermal Coefficient: Iingubo zeSiC zine-coefficient ephantsi yokwandisa ubushushu (CTE), ngokuqhelekileyo zikwi-4.0-4.5 µm/mK (kwi-25-1000℃). Oku kuthetha ukuba uzinzo lwayo lobukhulu lubalasele kakhulu kubushushu obukhulu.

Ukumelana nokugqwala: Iingubo zeSiC ziyamelana kakhulu nokugqwala kwiindawo ezine-asidi enamandla, i-alkali kunye ne-oxidizing, ingakumbi xa kusetyenziswa ii-asidi ezinamandla (ezifana ne-HF okanye i-HCl), ukuxhathisa kwazo ukugqwala kudlula kakhulu oko kwezixhobo zesinyithi eziqhelekileyo.

Isiseko sesicelo sokugquma seSiC

I-SiC coating idla ngokusetyenziswa ukuphucula ukumelana nokugqwala, ukumelana nobushushu obuphezulu, kunye nokumelana nokukhukuliseka kwe-plasma ye-substrate. Ii-substrate ezisetyenziswa rhoqo ziquka oku kulandelayo:

Uhlobo lwe-substrate	Isizathu sesicelo	Ukusetyenziswa okuqhelekileyo
Igrafayithi	- Ulwakhiwo olukhanyayo, ukuqhuba kakuhle kobushushu - Kodwa idlakazwa lula yiplasma, ifuna ukhuseleko lokugquma kweSiC	Iindawo zegumbi lokucoca umoya, iinqanawa zegrafiti, iitreyi zokugrumba ngeplasma, njl.
I-Quartz (iQuartz/iSiO₂)	- Ubumsulwa obuphezulu kodwa budla ngokugqwala - Ukwaleka kwandisa ukumelana nokukhukuliseka kwe-plasma	Iindawo zegumbi le-CVD/PECVD
Iiseramikhi (ezifana ne-alumina Al₂O₃)	- Amandla aphezulu kunye nesakhiwo esizinzileyo - Ukwaleka kuphucula ukumelana nokugqwala komphezulu	Iingubo zegumbi, izinto ezifakelweyo, njl.
Iimetali (ezifana ne-molybdenum, i-titanium, njl.njl.)	- Ukuqhuba kakuhle kobushushu kodwa ukumelana nokugqwala okubi - Ukwaleka kuphucula uzinzo lomphezulu	Izixhobo ezikhethekileyo zokuphendula ngenkqubo
Umzimba we-silicon carbide osikiweyo (ubuninzi be-SiC)	- Kwiindawo ezineemfuno eziphezulu zeemeko zokusebenza ezinzima - Ukwaleka kuphucula ngakumbi ubumsulwa kunye nokumelana nokugqwala	Izixhobo zegumbi le-CVD/ALD ezikumgangatho ophezulu

Iimveliso ezigqunywe yiSiC zihlala zisetyenziswa kwezi ndawo zilandelayo ze-semiconductor

Iimveliso zokugquma zeSiC zisetyenziswa kakhulu ekucutshungulweni kwee-semiconductor, ikakhulu kubushushu obuphezulu, ukugqwala okuphezulu kunye neendawo ezinamandla zeplasma. Ezi zilandelayo ziinkqubo ezininzi eziphambili zokusetyenziswa okanye amasimi kunye neenkcazo ezimfutshane:

Inkqubo/intsimi yesicelo	Inkcazo emfutshane	Umsebenzi weSilicon Carbide Coating
Ukugrumba ngeplasma (Ukugrumba)	Sebenzisa iigesi ezisekelwe kwi-fluorine okanye kwi-chlorine ukuze udlulisele iipateni	Melana nokukhukuliseka kweplasma kwaye uthintele ungcoliseko lwamasuntswana kunye nesinyithi
Ukufakwa komphunga weekhemikhali (i-CVD/PECVD)	Ukufakwa kwe-oxide, i-nitride kunye nezinye iifilimu ezincinci	Melana neegesi ezibangela ukonakaliswa kwaye wongeze ubomi bezinto ezisetyenziswayo
Igumbi lokufumba umphunga ngokwasemzimbeni (iPVD)	Ukuqhushumba kwamasuntswana anamandla aphezulu ngexesha lenkqubo yokugquma	Ukuphucula ukumelana nokukhukuliseka kunye nokumelana nobushushu kwegumbi lokusabela
Inkqubo ye-MOCVD (efana nokukhula kwe-SiC epitaxial)	Ukusabela kwexesha elide phantsi kobushushu obuphezulu kunye nomoya ophezulu we-hydrogen corrosive	Gcina uzinzo lwezixhobo kwaye uthintele ungcoliseko lweekristale ezikhulayo
Inkqubo yokunyanga ubushushu (i-LPCVD, ukusasazwa, ukufakelwa, njl.njl.)	Ihlala yenziwa kubushushu obuphezulu kunye ne-vacuum/atmosphere	Khusela iinqanawa zegrafiti kunye neetreyi kwi-oxidation okanye ukubola
Umthwali wewafer/ichuck (Ukuphathwa kwewafer)	Isiseko segrafiti sokudlulisa okanye ukuxhasa i-wafer	Nciphisa ukuchitheka kwamasuntswana kwaye uphephe ungcoliseko lokudibana
Izixhobo zegumbi le-ALD	Ukulawula ngokuphindaphindiweyo nangokuchanekileyo ukufakwa kwe-atomic layer	Ingubo igcina igumbi licocekile kwaye inokumelana nokugqwala okuphezulu kwizinto ezingaphambili

Kutheni ukhetha i-VET Energy?

I-VET Energy ngumvelisi ophambili, umvelisi kunye nenkokeli yeemveliso zokugquma zeSiC eTshayina, iimveliso eziphambili zokugquma zeSiC ziqukaisithwali se-wafer esine-SiC coating, I-SiC egqunywe nge-camerai-epitaxial susceptor, Indandatho yegrafayithi egqunywe yiSiC, Iindawo zesiqingatha senyanga ezine-SiC coating, I-SiC egqunywe yi-carbon-carbon composite, Isikhephe se-wafer esigqunywe yi-SiC, Isifudumezi esine-SiC esigqunywe yi-SiC, njl. I-VET Energy izibophelele ekuboneleleni imboni ye-semiconductor ngezisombululo zobuchwepheshe kunye nemveliso ezigqwesileyo, kwaye ixhasa iinkonzo zokwenza ngokwezifiso. Silangazelela ukuba liqabane lakho lexesha elide eTshayina.