Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorbụ ngwaọrụ nkwado na ikpo ọkụ a haziri nke ọma iji jide ma kpoo ihe ndị na-emepụta semiconductor n'oge usoro mmepụta dịka Deposition ma ọ bụ Epitaxy.

Nhazi ya gụnyere nke a na-ahụkarị dịka okirikiri ma ọ bụ obere okirikiri, elu ya nwere ọtụtụ akpa ma ọ bụ ikpo okwu maka itinye wafers, ọ nwere ike ịbụ imewe siri ike ma ọ bụ oghere, dabere na usoro ikpo ọkụ.

Ọrụ bụ isi nke onye na-egbochi ọkpọkọ epitaxial:

1. Ihe na-ebu Wafer na Njikwa Okpomọkụ
E ji ọtụtụ akpa wafer (dịka nhazi hexagonal ma ọ bụ octagonal) mee elu susceptor ahụ, nke nwere ike ịkwado wafers 6-15 n'otu oge. Oke ike okpomọkụ nke graphite dị ọcha (120-150W/mK) na-eme ka nnyefe okpomọkụ dị ngwa ngwa, yana ọrụ ntụgharị (5-20 RPM), na-eme ka okpomọkụ elu wafer dị iche na <± 1 ℃ na nha nhata nke oyi akwa epitaxial nke <1%.

2. Nhazi nke ntụziaka nke gas reactant na-agafe
Ọdịdị obere nke elu ihe na-egbochi ihe nwere ike imebi mmetụta nke oke oyi akwa, na-enye ohere maka nkesa otu otu nke gas mmeghachi omume (dịka SiH4, NH3) ma melite nguzozi nke ọnụego nkwụnye.

3. Mgbochi mmetọ na nchedo mgbochi ire ere
Ihe ndị e ji graphite mee na-emebi ma na-ewepụta ihe ndị na-adịghị ọcha n'ígwè (dịka Fe,Ni) n'oge okpomọkụ dị elu, ebe mkpuchi CVD SiC dị 100μm nwere ike ime ka ọ ghara ịdị oke mma iji gbochie mgbanwe graphite, na-ebute oke ntụpọ wafer nke <0.1 ntụpọ/cm².

Ngwa:
- A na-ejikarị ya eme ihe maka uto nke silicon epitaxial
-Ọ dịkwa mma maka epitaxy nke ihe ndị ọzọ dịka GaAs, InP, wdg.

VET Energy na-eji graphite dị ọcha nke ukwuu yana mkpuchi CVD-SiC iji mee ka nkwụsi ike kemịkalụ dịkwuo mma:

1. Ihe dị ọcha nke graphite
Oke ike okpomọkụ: ike okpomọkụ nke graphite dị okpukpu atọ karịa nke silicon, nke nwere ike ibufe okpomọkụ ngwa ngwa site na isi iyi ọkụ gaa na wafer ma belata oge okpomọkụ.
Ike igwe: Njupụta graphite nrụgide Isostatic ≥ 1.85 g/cm³, nke nwere ike iguzogide okpomọkụ dị elu karịa 1200 ℃ na-enweghị mgbanwe.

2. mkpuchi CVD SiC
A na-emepụta oyi akwa β-SiC n'elu graphite site na ihe e ji emepụta anwụrụ ọkụ kemịkalụ (CVD), nke dị ọcha nke ≥ 99.99995%, njehie nhata nke ọkpụrụkpụ mkpuchi ahụ erughị ±5%, na oke iru ala ahụ erughị Ra0.5um.

3. Mmezi arụmọrụ:
Nguzogide nrụrụ aka: nwere ike iguzogide nnukwu gas ndị na-emebi emebi dịka Cl2, HCl, wdg, nwere ike ịgbatị ndụ GaN epitaxy ugboro atọ na gburugburu NH3.
Nkwụsi ike nke okpomọkụ: Ọnụọgụ nke mgbasawanye okpomọkụ (4.5 × 10-6/℃) na-adakọ na graphite iji zere mgbawa mkpuchi nke mgbanwe okpomọkụ kpatara.
Ike na Mgbochi Iyi: Ike Vickers ruru 28 GPa, nke dị okpukpu iri karịa graphite ma nwee ike ibelata ihe egwu nke ịkpụcha wafer.