Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorbụ ngwa nkwado na kpo oku a haziri ahazi nke a na-eji na-ejide ma na-ekpo ọkụ semiconductor substrates n'oge mmepụta ihe dị ka Deposition ma ọ bụ Epitaxy usoro.

Ọdịdị ya na-agụnye ụdị cylindrical ma ọ bụ ntakịrị barel, n'elu nwere ọtụtụ akpa ma ọ bụ ikpo okwu maka idobe wafers, nwere ike ịbụ ihe siri ike ma ọ bụ oghere, dabere na usoro kpo oku.

Ọrụ bụ isi nke susceptor barrel epitaxial:

1. Onye na-ebu Wafer na njikwa okpomọkụ
Ejiri ọtụtụ akpa wafer (dị ka nhazi hexagonal ma ọ bụ octagonal), nke nwere ike ịkwado 6-15 wafers n'otu oge. The elu thermal conductivity nke elu-ọcha graphite (120-150W / mK) ana achi achi ngwa ngwa okpomọkụ nyefe, jikọtara na adiana ọrụ (5-20 RPM), dapụtara na a wafer elu okpomọkụ deviation nke <± 1 ℃ na epitaxial oyi akwa ọkpụrụkpụ uniformity nke <1%.

2. Optimization nke reactant gas eruba direction
Microstructure nke elu susceptor nwere ike mebie mmetụta oyi akwa oke, na-enye ohere maka nkesa gasị mmeghachi omume otu (dị ka SiH4, NH3) ma melite nkwụsi ike nke ọnụego nkwụnye ego.

3. Mgbochi mmetọ na mgbochi corrosion nchebe
Ihe ndị na-ese onyinyo na-adịkarị mfe ire ere ma hapụkwa ihe ndị na-adịghị ọcha ígwè (dị ka Fe, Ni) na okpomọkụ dị elu, ebe mkpuchi CVD SiC 100μm nwere ike ịmepụta ihe mgbochi siri ike iji gbochie graphite volatilization, na-ebute nkwụsịtụ ntụpọ nke <0.1 ntụpọ / cm ².

Ngwa:
-A na-ejikarị eme ihe maka uto silicon epitaxial
-Ọdabara maka epitaxy nke ihe ndị ọzọ semiconductor dị ka GaAs, InP, wdg.

VET Energy na-eji graphite dị ọcha na mkpuchi CVD-SiC kwalite nkwụsi ike kemịkalụ:

1. Akwa graphite dị ọcha
Igwe ọkụ ọkụ dị elu: conductivity thermal conductivity nke graphite bụ okpukpu atọ nke silicon, nke nwere ike ịnyefe ọkụ ngwa ngwa site na isi iyi ọkụ na wafer ma belata oge kpo oku.
Mechanical ike: Isostatic mgbali graphite njupụta ≥ 1.85 g / cm ³, ike iguzogide elu okpomọkụ n'elu 1200 ℃ na-enweghị deformation.

2. CVD SiC mkpuchi
A β-SiC oyi akwa kpụrụ n'elu graphite site chemical vapor deposition (CVD), na ịdị ọcha nke ≥ 99.99995%, uniformity njehie nke mkpuchi ọkpụrụkpụ bụ ihe na-erughị ± 5%, na elu roughness bụ ihe na-erughị Ra0.5um.

3. Mmelite arụmọrụ:
Nguzogide corrosion: nwere ike iguzogide ikuku na-emebi emebi dị ka Cl2, HCl, wdg, nwere ike ịgbatị ndụ GaN epitaxy ugboro atọ na gburugburu NH3.
Nkwụsi ike nke okpomọkụ: ọnụọgụ nke mgbasawanye okpomọkụ (4.5 × 10-6 / ℃) dakọtara graphite iji zere mkpuchi mkpuchi nke mgbanwe okpomọkụ kpatara.
Isi ike na iyi Nguzogide: Ike siri ike nke Vickers ruru 28GPa, nke dị okpukpu iri karịa graphite ma nwee ike ibelata ihe ize ndụ nke nchapu wafer.