Epitaxial Epi Graphite Foosto Susceptor

Epitaxial Epi Graphite Foosto Susceptor

Epitaxial Epi Graphite Foosto Susceptorwaa qalab taageero iyo kuleylin oo si gaar ah loogu talagalay oo loo isticmaalo in lagu hayo laguna kululeeyo substrate-ka semiconductor-ka inta lagu jiro hababka wax soo saarka sida Deposition ama Epitaxy.

Qaab-dhismeedkiisu wuxuu ka kooban yahay qaab dhululubo ah ama qaab foosto oo yar, dusha sare waxay leedahay meelo badan ama goobo lagu dhejiyo buskudka, waxay noqon kartaa naqshad adag ama godan, iyadoo ku xiran habka kululaynta.

Hawlaha ugu muhiimsan ee suuxdinta afka ee epitaxial:

1. Qaadaha Wafer-ka iyo Xakamaynta Heerkulka
Dusha sare ee susceptor-ka waxaa loogu talagalay jeebab badan oo wafer ah (sida qaabaynta lix-geesoodka ah ama siddeed-geesoodka ah), kuwaas oo taageeri kara 6-15 wafer isku mar. Gudbinta kulaylka sare ee graphite saafiga sare leh (120-150W/mK) waxay hubisaa wareejinta kulaylka degdega ah, oo ay weheliso shaqada wareegga (5-20 RPM), taasoo keenta leexashada heerkulka dusha sare ee wafer oo ah <± 1 ℃ iyo isku-darka dhumucda lakabka epitaxial oo ah <1%.

2. Hagaajinta jihada socodka gaaska falgalka
Qaab-dhismeedka yar ee dusha sare ee susceptor-ka ayaa jebin kara saameynta lakabka xuduudda, taasoo u oggolaanaysa qaybinta isku midka ah ee gaasaska falcelinta (sida SiH4, NH3) iyo hagaajinta isku dheelitirka heerka dhigista.

3. Ka hortagga wasakhowga iyo ka hortagga daxalka
Substrates-ka garaafitku waxay u nugul yihiin inay burburaan oo ay sii daayaan wasakhda birta (sida Fe,Ni) heerkul sare, halka dahaarka CVD SiC ee 100μm dhumucdiisuna tahay uu samayn karo caqabad cufan si loo xakameeyo isbeddelka graphite, taasoo keenta heerka cilladda wafer oo ah <0.1 cillado/cm².

Codsiyada:
- Waxaa ugu horreyn loo isticmaalaa koritaanka epitaxial silicon
- Sidoo kale waxaa lagu dabaqi karaa epitaxy-ga walxaha kale ee semiconductor-ka sida GaAs, InP, iwm.

Tamarta VET waxay isticmaashaa graphite saafi ah oo heer sare ah oo leh dahaarka CVD-SiC si kor loogu qaado xasilloonida kiimikada:

1. Walax graphite ah oo saafi ah oo sare
Gudbinta kulaylka sare: Gudbinta kulaylka ee graphite waa saddex jeer ka badan silicon, taas oo si dhakhso ah u wareejin karta kulaylka isha kuleylinta una gaabin karta wafer-ka waxayna gaabin kartaa wakhtiga kululaynta.
Xoogga farsamada: Cufnaanta garaafka cadaadiska ee isostatic ≥ 1.85 g/cm³, oo awood u leh inay u adkaysato heerkulka sare ee ka sarreeya 1200 ℃ iyada oo aan lahayn isbeddel.

2. Dahaarka CVD SiC
Lakabka A β - SiC waxaa lagu sameeyaa dusha sare ee garaafka iyadoo la adeegsanayo kaydinta uumiga kiimikada (CVD), iyadoo daahirnimadu tahay ≥ 99.99995%, qaladka isku midka ah ee dhumucda dahaarka ayaa ka yar ± 5%, qallafsanaanta dusha sarena waa ka yar tahay Ra0.5um.

3. Horumarinta waxqabadka:
Iska caabbinta daxalka: waxay u adkeysan kartaa gaasaska sunta badan sida Cl2, HCl, iwm., waxay kordhin kartaa cimriga GaN epitaxy saddex jeer deegaanka NH3.
Xasiloonida kulaylka: Isugeynta ballaarinta kulaylka (4.5 × 10-6/℃) waxay la mid tahay garaafka si looga fogaado dillaaca dahaarka oo ay keento isbeddellada heerkulka.
Adkaanshaha iyo Adkeysiga Xirashada: Adkaanshaha Vickers wuxuu gaaraa 28 GPa, taasoo 10 jeer ka badan graphite wuxuuna yarayn karaa khatarta xoqidda wafer.