Epitaxial Epi Graphite Foosto Susceptor

Epitaxial Epi Graphite Foosto Susceptor

Epitaxial Epi Graphite Foosto Susceptorwaa qalab si gaar ah loo habeeyay iyo qalab kulaylinta loo isticmaalo in lagu hayo laguna kululeeyo substrate-ka wax soo saarka sida Deposition ama Epitaxy.

Qaab dhismeedkeeda waxaa ka mid ah sida caadiga ah cylindrical ama qaab yar oo foosto ah, oogada ayaa leh meelo badan oo jeebab ah ama meelo lagu dhejiyo maraqa, waxay noqon kartaa naqshad adag ama godan, taas oo ku xidhan habka kuleylka.

Hawlaha ugu muhiimsan ee susceptor barrel epitaxial:

1. Qaadaha Waferka iyo Xakamaynta heerkulka
Dusha susceptor waxaa loogu talagalay jeebab badan oo wafer ah (sida qaabaynta laba geesoodka ama octagonal), kaas oo taageeri kara 6-15 wafers isku mar. Dhaqdhaqaaqa kulaylka sare ee garaafka saafiga ah (120-150W / mK) waxay hubisaa wareejinta kulaylka degdega ah, oo ay weheliso shaqada wareegga (5-20 RPM), taasoo keentay heerkulka dusha sare ee wafer ee <± 1 ℃ iyo lebbiska lakabka epitaxial ee <1%.

2. Hagaajinta jihada socodka gaaska falcelinta
Qaab-dhismeedka yar-yar ee dusha sare ee shakiga ayaa jebin kara saamaynta lakabka xadka, taas oo u oggolaanaysa qaybinta isku midka ah ee gaaska falcelinta (sida SiH4, NH3) iyo hagaajinta joogtaynta heerka dhigaalka.

3. Ka-hortagga wasakheynta iyo ilaalinta daxalka
Qaybaha graphite waxay u nugul yihiin inay burburaan oo ay sii daayaan wasakhda birta ah (sida Fe, Ni) heerkul sare, halka daahan 100μm dhumucdiisuna tahay CVD SiC uu samayn karo caqabad cufan si loo xakameeyo isbeddelka garaafka, taasoo keentay heerka cilladda wafer ee <0.1 cilladaha / cm ².

Codsiyada:
-Aad loo isticmaalo koritaanka epitaxial silicon
-Sidoo kale lagu dabaqi karo epitaxy ee qalabka kale ee semiconductor sida GaAs, InP, iwm.

Tamarta VET waxay isticmaashaa garaafka nadiifka sare leh oo leh daahan CVD-SiC si kor loogu qaado xasiloonida kiimikada:

1. Walaxda garaafka nadiifka ah ee sare
Dhaqdhaqaaqa kuleyliyaha sare: kuleylka kuleylka ee graphite waa seddex jeer silikoon, kaas oo si dhakhso ah ugu wareejin kara kulaylka ilaha kuleylka ilaa waferka oo soo gaabin kara wakhtiga kuleylka.
Awoodda makaanikada: cufnaanta garaafka cadaadiska istatic ≥ 1.85 g/cm ³, awood u leh u adkeysiga heerkulka sare ee ka sarreeya 1200 ℃ iyada oo aan qalloocin.

2. CVD SiC dahaarka
A β - lakabka SiC waxaa lagu sameeyay dusha sare ee graphite by kaydinta uumiga kiimikada (CVD), oo leh nadiif ah ≥ 99.99995%, qaladka lebiska ee dhumucdiisuna waxay ka yar tahay ± 5%, iyo qallafsanaanta dusha sare waxay ka yar tahay Ra0.5um.

3. Horumarinta waxqabadka:
Iska caabinta daxalka: waxay u adkeysan kartaa gaasaska daxalka sare leh sida Cl2, HCl, iwm, waxay kordhin kartaa cimriga GaN epitaxy saddex jeer gudaha deegaanka NH3.
Deganaanshaha kulaylka: Isku-xidhka balaadhinta kulaylka (4.5 × 10-6/℃) waxay isbarbar dhigtaa garaafka si looga fogaado dillaaca dahaarka ee ay sababto isbeddellada heerkulka.
Adag iyo Xiro iska caabin: Adag-ku-darka Vickers-ku waxa uu gaadhaa 28GPa, kaas oo 10 jeer ka sarreeya graphite waxana uu yarayn karaa khatarta xagashada wafer.