Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorndi chipangizo chothandizira komanso chotenthetsera chomwe chimagwiritsidwa ntchito posungira ndi kutentha zinthu za semiconductor panthawi yopanga zinthu monga Deposition kapena Epitaxy.

Kapangidwe kake nthawi zambiri kamakhala kozungulira kapena kooneka ngati mbiya, pamwamba pake pali matumba angapo kapena nsanja zoikiramo ma wafer, akhoza kukhala olimba kapena opanda kanthu, kutengera njira yotenthetsera.

Ntchito zazikulu za epitaxial barrel susceptor:

1. Chonyamulira cha Wafer ndi Kulamulira Kutentha
Pamwamba pa susceptor pali matumba angapo a wafer (monga hexagonal kapena octagonal), omwe amatha kunyamula ma wafer 6-15 nthawi imodzi. Kuchuluka kwa kutentha kwa graphite yoyera kwambiri (120-150W/mK) kumatsimikizira kusamutsa kutentha mwachangu, kuphatikiza ndi ntchito yozungulira (5-20 RPM), zomwe zimapangitsa kuti kutentha kwa pamwamba pa wafer kuchepe ndi <± 1 ℃ ndi makulidwe a epitaxial layer a <1%.

2. Kukonza kayendedwe ka mpweya woyamwa bwino
Kapangidwe kakang'ono ka pamwamba pa susceptor kangathe kuswa mphamvu ya malire, zomwe zimathandiza kuti mpweya wochitapo kanthu ugawane mofanana (monga SiH4, NH3) ndikuwonjezera kusinthasintha kwa kuchuluka kwa mpweya womwe umayikidwa.

3. Kuteteza kuipitsa ndi dzimbiri
Ma substrates a graphite amatha kuwola ndikutulutsa zinyalala zachitsulo (monga Fe,Ni) kutentha kwambiri, pomwe chophimba cha CVD SiC cha makulidwe a 100μm chingapangitse chotchinga cholimba kuti chichepetse kusinthasintha kwa graphite, zomwe zimapangitsa kuti chiwopsezo cha wafer chikhale <0.1 defects/cm².

Mapulogalamu:
- Amagwiritsidwa ntchito makamaka pakukula kwa silicon epitaxial
-Imagwiranso ntchito pa epitaxy ya zipangizo zina za semiconductor monga GaAs, InP, ndi zina zotero.

VET Energy imagwiritsa ntchito graphite yoyera kwambiri yokhala ndi zokutira za CVD-SiC kuti iwonjezere kukhazikika kwa mankhwala:

1. Zinthu zopangidwa ndi graphite zoyera kwambiri
Kutentha kwambiri: kutentha kwa graphite kumachulukitsa katatu kuposa silicon, komwe kumatha kusamutsa kutentha mwachangu kuchokera ku gwero lotenthetsera kupita ku wafer ndikufupikitsa nthawi yotenthetsera.
Mphamvu ya makina: Kuchuluka kwa graphite yothamanga kwambiri ≥ 1.85 g/cm³, yokhoza kupirira kutentha kwambiri kuposa 1200 ℃ popanda kusintha.

2. Chophimba cha CVD SiC
Gawo la β - SiC limapangidwa pamwamba pa graphite pogwiritsa ntchito mankhwala otulutsa nthunzi (CVD), loyera la ≥ 99.99995%, cholakwika chofanana cha makulidwe ophimba ndi chochepera ± 5%, ndipo kukhwima kwa pamwamba ndi kochepera Ra0.5um.

3. Kuwongolera magwiridwe antchito:
Kukana dzimbiri: imatha kupirira mpweya wochuluka wowononga monga Cl2, HCl, ndi zina zotero, imatha kukulitsa moyo wa GaN epitaxy katatu mu chilengedwe cha NH3.
Kukhazikika kwa kutentha: Kuchuluka kwa kutentha (4.5 × 10-6/℃) kumafanana ndi graphite kuti zisawonongeke chifukwa cha kusinthasintha kwa kutentha.
Kulimba ndi Kukana Kuvala: Kulimba kwa Vickers kumafika pa 28 GPa, komwe ndi kokwera nthawi 10 kuposa graphite ndipo kumatha kuchepetsa chiopsezo cha kukwawa kwa wafer.