Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorndi chipangizo chothandizira ndi chotenthetsera chopangidwa mwapadera chomwe chimagwiritsidwa ntchito kusunga ndi kutentha magawo a semiconductor panthawi yopanga monga Deposition kapena Epitaxy process.

Kapangidwe kake kamakhala ndi cylindrical kapena mbiya pang'ono, pamwamba pake imakhala ndi matumba angapo kapena nsanja zoyikamo zowotcha, zimatha kukhala zolimba kapena zopanda pake, kutengera njira yotenthetsera.

Ntchito zazikulu za epitaxial barrel susceptor:

1. Wafer Chonyamulira ndi Kutentha Control
Pamwamba pa susceptor amapangidwa ndi matumba angapo ophikira (monga hexagonal kapena octagonal makonzedwe), omwe amatha kuthandizira ma wafer 6-15 nthawi imodzi. Kutentha kwapamwamba kwambiri kwa graphite (120-150W/mK) kumatsimikizira kutentha kwachangu, kuphatikizidwa ndi ntchito yozungulira (5-20 RPM), zomwe zimapangitsa kuti kutentha kwapang'onopang'ono kuwonongeke <± 1 ℃ ndi epitaxial wosanjikiza makulidwe ofanana <1%.

2. Kukhathamiritsa kwa reactant gasi otaya njira
Ma microstructure a susceptor surface amatha kuthyola malire osanjikiza, kulola kugawa yunifolomu ya mpweya (monga SiH4, NH3) ndikuwongolera kusasinthika kwa kuchuluka kwa ma deposition.

3. Anti kuipitsa ndi kuteteza dzimbiri
Magawo a graphite amatha kuwonongeka ndikutulutsa zodetsa zachitsulo (monga Fe, Ni) pa kutentha kwambiri, pomwe 100μm wandiweyani wa CVD SiC wokutira ukhoza kupanga chotchinga chotchinga kuti kupondereza kuphulika kwa graphite, zomwe zimapangitsa kuti chilema chikhale cha<0.1 defects/cm².

Mapulogalamu:
- Amagwiritsidwa ntchito makamaka pakukula kwa silicon epitaxial
-Imagwiranso ntchito pa epitaxy ya zida zina za semiconductor monga GaAs, InP, etc.

VET Energy imagwiritsa ntchito graphite yoyera kwambiri yokhala ndi zokutira za CVD-SiC kuti zithandizire kukhazikika kwamankhwala:

1. Kuyeretsa kwakukulu kwa graphite zakuthupi
High matenthedwe madutsidwe: matenthedwe madutsidwe wa graphite ndi katatu kuposa silicon, amene mofulumira kusamutsa kutentha gwero Kutentha gwero lopyapyala ndi kufupikitsa Kutentha nthawi.
Zimango mphamvu: Isostatic kuthamanga graphite kachulukidwe ≥ 1.85 g/cm ³, wokhoza kupirira kutentha pamwamba 1200 ℃ popanda mapindikidwe.

2. Kupaka kwa CVD SiC
A β - SiC wosanjikiza amapangidwa pamwamba pa graphite ndi mankhwala nthunzi mafunsidwe (CVD), ndi chiyero cha ≥ 99.99995%, yunifolomu cholakwika ❖ kuyanika makulidwe ndi zosakwana ± 5%, ndipo pamwamba roughness ndi zosakwana Ra0.5um.

3. Kuwongolera magwiridwe antchito:
Kukana kwa dzimbiri: Kumatha kupirira mpweya wambiri wowononga monga Cl2, HCl, ndi zina zotero, zimatha kukulitsa moyo wa GaN epitaxy katatu m'malo a NH3.
Kukhazikika kwamafuta: The coefficient of thermal expansion (4.5 × 10-6/℃) imagwirizana ndi graphite kupewa kupaka utoto chifukwa cha kusinthasintha kwa kutentha.
Kuuma ndi Kuvala Kukaniza: Kuuma kwa Vickers kumafika ku 28 GPa, komwe kuli kokwera ka 10 kuposa graphite ndipo kungachepetse chiopsezo cha zokopa za wafer.