Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorhe taputapu tautoko, whakamahana hoki i hangaia mō te pupuri me te whakamahana i ngā papa haurua-ira i roto i ngā tukanga hangahanga pēnei i te tukanga Whakatakoto, te Epitaxy rānei.

Ko tōna hanganga he porotaka te nuinga, he āhua pēke rānei, he maha ngā pute, ngā tūāpapa rānei o te mata mō te whakatakotoranga o ngā angaanga, ka taea te hanga mārō, te hanga tuwhera rānei, i runga i te tikanga whakamahana.

Ngā mahi matua o te pūwero epitaxial barrel susceptor:

1. Kawe Angiangi me te Whakahaere Pāmahana
He maha ngā pōke wafer kua hangaia mō te mata whakapūmau (pēnei i te whakaritenga hexagonal, he octagonal rānei), ka taea te tautoko i ngā wafer e 6-15 i te wā kotahi. Mā te kawe wera teitei o te graphite parakore teitei (120-150W/mK) ka tere te whakawhiti wera, me te mahi hurihuri (5-20 RPM), ka hua ake he rerekētanga pāmahana o te mata wafer <± 1 ℃ me te ōritetanga o te matotoru o te paparanga epitaxial <1%.

2. Te arotau i te ahunga rere o te hau tauhohenga
Ka taea e te hanganga moroiti o te mata o te pūwero te wawahi i te pānga o te paparanga rohe, ka taea ai te tohatoha ōrite o ngā hau tauhohenga (pēnei i te SiH4, NH3) me te whakapai ake i te ōritetanga o te tere whakatakotoranga.

3. Te ārai i te parahanga me te ārai i te waikura
He ngāwari te pirau o ngā papa graphite, ā, ka tukuna ngā poke whakarewa (pērā i te Fe,Ni) i ngā pāmahana teitei, ā, ka taea e te paninga CVD SiC matotoru 100μm te hanga i tētahi ārai matotoru hei pehi i te mimiti o te graphite, ka hua ake he tere hapa wafer <0.1 hapa/cm².

Ngā tono:
-E whakamahia ana mō te tipu epitaxial silicon
-E tika ana hoki mō te epitaxy o ētahi atu rauemi semiconductor pēnei i te GaAs, InP, me ētahi atu.

Ka whakamahia e VET Energy te karāpeti parakore teitei me te paninga CVD-SiC hei whakarei ake i te pumau matū:

1. Rauemi karapiti tino parakore
Te kawe wera teitei: ko te kawe wera o te karāpeti e toru ngā wā i tō te silicon, ka taea te whakawhiti tere i te wera mai i te pūtake whakamahana ki te papa whakarewa me te whakapoto i te wā whakamahana.
Kaha ā-ringa: Te mātotoru o te karāhe pehanga isostatic ≥ 1.85 g/cm³, ka taea te tu atu i ngā pāmahana teitei i runga ake i te 1200 ℃ me te kore e whakarerekē.

2. Paninga CVD SiC
Ka hangaia he paparanga β-SiC ki runga i te mata o te karāpeti mā te whakatakotoranga kohu matū (CVD), me te parakore o te ≥ 99.99995%, ko te hapa ōrite o te matotoru o te paninga he iti iho i te ±5%, ā, ko te taratara o te mata he iti iho i te Ra0.5um.

3. Whakapai ake i te mahi:
Ātete ki te waikura: ka taea te tu atu i ngā hau waikura nui pēnei i te Cl2, te HCl, me ētahi atu, ka taea te whakaroa i te roanga o te ora o te epitaxy GaN e toru ngā wā i roto i te taiao NH3.
Te pumau o te wera: Ka ōrite te tauwehenga o te whānui wera (4.5 × 10-6/℃) ki te karāpeti hei karo i te pakaru o te paninga i puta mai i ngā piki me ngā heke o te pāmahana.
Te Pakari me te Ātete ki te Pakaru: Ka eke te pakeke o Vickers ki te 28 GPa, he 10 ngā wā teitei ake i te karāpeti, ā, ka taea te whakaiti i te tūponotanga o ngā karawarawa wafer.