Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel SusceptorHe kākoʻo kūikawā i hoʻolālā ʻia a me ka mea hoʻomehana i hoʻohana ʻia e paʻa a wela i nā substrates semiconductor i ka wā o ka hana ʻana e like me nā kaʻina hana Deposition a Epitaxy.

ʻO ke ʻano o kona ʻano he cylindrical a i ʻole ke ʻano barela liʻiliʻi.

ʻO nā hana nui o ka epitaxial barrel susceptor:

1. Ka Wafer Carrier a me ka Mana wela
Hoʻolālā ʻia ka ʻili o ka susceptor me nā ʻeke wafer he nui (e like me ka hoʻonohonoho hexagonal a octagonal paha), hiki ke kākoʻo i nā wafers 6-15 i ka manawa like. ʻO ka conductivity thermal kiʻekiʻe o ka graphite maʻemaʻe kiʻekiʻe (120-150W / mK) e hōʻoia i ka hoʻoili wela wikiwiki, i hui pū ʻia me ka hana rotation (5-20 RPM), ka hopena i kahi haʻahaʻa haʻahaʻa o ka ʻili o<± 1 ℃ a me ka epitaxial layer mānoanoa like ʻole o <1%.

2. Optimization o reactant kinoea holo kuhikuhi
Hiki i ka microstructure o ka ʻili susceptor ke wāwahi i ka hopena o ka papa palena, e ʻae ana i ka hoʻohele like ʻana o nā kinoea hopena (e like me SiH4, NH3) a me ka hoʻomaikaʻi ʻana i ke kūlike o ka helu deposition.

3. Anti pollution a me ka pale anti-corrosion
Hiki ke hoʻoheheʻe a hoʻokuʻu i nā mea ʻino metala (e like me Fe, Ni) i nā wela kiʻekiʻe, ʻoiai he 100μm mānoanoa CVD SiC uhi hiki ke hana i kahi pale paʻa e hoʻopau i ka graphite volatilization, e hopena i ka helu defect wafer o <0.1 defects/cm ².

Nā noi:
- Hoʻohana mua ʻia no ka ulu ʻana o ka epitaxial silicon
-Pono no ka epitaxy o nā mea semiconductor ʻē aʻe e like me GaAs, InP, etc.

Hoʻohana ʻo VET Energy i ka graphite maʻemaʻe kiʻekiʻe me ka uhi CVD-SiC e hoʻomaikaʻi i ke kūpaʻa kemika:

1. High maemae graphite mea
ʻO ka conductivity thermal kiʻekiʻe: ʻo ka conductivity thermal o ka graphite he ʻekolu manawa o ka silicon, hiki ke hoʻololi koke i ka wela mai ke kumu hoʻomehana i ka wafer a hoʻopōkole i ka manawa hoʻomehana.
Mechanical ikaika: Isostatic pressure graphite density ≥ 1.85 g/cm ³, hiki ke kū i nā wela kiʻekiʻe ma luna o 1200 ℃ me ka ʻole deformation.

2. CVD SiC uhi
Hoʻokumu ʻia kahi papa β - SiC ma ka ʻili o ka graphite e ka hoʻoheheʻe ʻana i ka mahu (CVD), me ka maʻemaʻe o ≥ 99.99995%, ʻo ka hapa like ʻole o ka mānoanoa o ka uhi ʻana ma lalo o ± 5%, a ʻoi aku ka liʻiliʻi o ka roughness ma mua o Ra0.5um.

3. Hoʻomaikaʻi i ka hana:
ʻO ke kūpaʻa ʻino: hiki ke kū i nā kinoea corrosive kiʻekiʻe e like me Cl2, HCl, a me nā mea ʻē aʻe, hiki ke hoʻolōʻihi i ke ola o GaN epitaxy i ʻekolu mau manawa ma ke kaiapuni NH3.
ʻO ke kūpaʻa wela: ʻO ke koena o ka hoʻonui wela (4.5 × 10-6/℃) pili i ka graphite e pale aku i ka haki ʻana o ka uhi ma muli o ka loli ʻana o ka mahana.
ʻO ka paʻakikī a me ka pale ʻana: ʻO ka paʻakikī Vickers hiki i ka 28 GPa, ʻo ia ka 10 mau manawa kiʻekiʻe ma mua o ka graphite a hiki ke hōʻemi i ka pilikia o ka wafer scratches.