Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorhe mea kākoʻo a hoʻomehana i hoʻolālā kūikawā ʻia e paʻa a hoʻomehana i nā substrates semiconductor i ka wā o nā kaʻina hana e like me ke kaʻina hana Deposition a i ʻole Epitaxy.

ʻO kona ʻano he ʻano cylindrical a i ʻole he ʻano barela iki, he nui nā ʻeke a i ʻole nā ​​​​papahana no ke kau ʻana i nā wafers, hiki ke paʻa a hollow paha ka hoʻolālā, ma muli o ke ʻano hoʻomehana.

ʻO nā hana nui o ka mea hoʻopili pahu epitaxial:

1. Mea lawe wafer a me ka mana mahana
Ua hoʻolālā ʻia ka ʻili susceptor me nā ʻeke wafer he nui (e like me ka hoʻonohonoho hexagonal a i ʻole octagonal), hiki ke kākoʻo i nā wafers 6-15 i ka manawa like. ʻO ka conductivity thermal kiʻekiʻe o ka graphite maʻemaʻe kiʻekiʻe (120-150W/mK) e hōʻoiaʻiʻo i ka hoʻoili wela wikiwiki, i hui pū ʻia me ka hana rotation (5-20 RPM), e hopena ana i kahi ʻokoʻa mahana o ka ʻili wafer o <± 1 ℃ a me ke kaulike o ka mānoanoa o ka papa epitaxial o <1%.

2. Hoʻonui ʻia ke kuhikuhi kahe kinoea reactant
Hiki i ka microstructure o ka ʻili susceptor ke uhaʻi i ka hopena o ka papa palena, e ʻae ana i ka hoʻolaha like ʻana o nā kinoea hopena (e like me SiH4, NH3) a me ka hoʻomaikaʻi ʻana i ke kūlike o ka helu deposition.

3. Palekana hoʻohaumia a me ka pale ʻana i ka palaho
He maʻalahi nā substrates graphite i ka palaho a hoʻokuʻu i nā mea haumia metala (e like me Fe,Ni) i nā mahana kiʻekiʻe, ʻoiai hiki i kahi uhi CVD SiC 100μm mānoanoa ke hana i kahi pale mānoanoa e kāohi i ka volatilization graphite, e hopena ana i ka helu kīnā wafer o <0.1 defects/cm².

Nā noi:
-Hoʻohana nui ʻia no ka ulu ʻana o ka silicon epitaxial
-Pili nō hoʻi no ka epitaxy o nā mea semiconductor ʻē aʻe e like me GaAs, InP, a pēlā aku.

Hoʻohana ʻo VET Energy i ka graphite maʻemaʻe kiʻekiʻe me ka uhi CVD-SiC e hoʻoikaika i ke kūpaʻa kemika:

1. Mea graphite maʻemaʻe kiʻekiʻe
ʻO ke alakaʻi wela kiʻekiʻe: ʻekolu manawa o ke alakaʻi wela o ka graphite o ka silicon, hiki ke hoʻoili koke i ka wela mai ke kumu hoʻomehana i ka wafer a hoʻopōkole i ka manawa hoʻomehana.
Ikaika mīkini: ʻO ka nui o ke kaomi graphite isostatic ≥ 1.85 g/cm³, hiki ke kū i nā mahana kiʻekiʻe ma luna o 1200 ℃ me ka ʻole o ka deformation.

2. Uhi ʻana o CVD SiC
Hoʻokumu ʻia kahi papa β - SiC ma luna o ka ʻili o ka graphite e ka hoʻokahe ʻana o ka mahu kemika (CVD), me ka maʻemaʻe o ≥ 99.99995%, ʻoi aku ka hewa like o ka mānoanoa o ka uhi ʻana ma mua o ± 5%, a ʻoi aku ka liʻiliʻi o ka ʻili ma mua o Ra0.5um.

3. Hoʻomaikaʻi ʻana i ka hana:
Ke kūpaʻa ʻana i ka palaho: hiki ke kū i nā kinoea palaho kiʻekiʻe e like me Cl2, HCl, a pēlā aku, hiki ke hoʻolōʻihi i ke ola o GaN epitaxy i ʻekolu manawa i loko o ke kaiapuni NH3.
Paʻa wela: Hoʻohālikelike ke koina o ka hoʻonui wela (4.5 × 10-6/℃) me ka graphite e pale aku i ka haki ʻana o ka uhi i hoʻokumu ʻia e nā loli o ka mahana.
Paʻakikī a me ke Kū'ē ʻana i ka ʻAʻahu: Hiki i ka paʻakikī Vickers i 28 GPa, ʻo ia hoʻi he 10 mau manawa kiʻekiʻe ma mua o ka graphite a hiki ke hōʻemi i ka pilikia o nā ʻōpala wafer.