Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptormudziyo wekutsigira nekudziisa wakagadzirwa zvakanaka unoshandiswa kuchengetedza nekudziisa ma semiconductor substrates panguva yekugadzira zvinhu zvakaita seDeposition kana Epitaxy processes.

Maumbirwo ayo anowanzo kuve akaita sedenderedzwa kana kuti akaita sebharemu zvishoma, pamusoro payo pane homwe dzakawanda kana mapuratifomu ekuisa mawafer, anogona kunge akasimba kana kuti asina chinhu, zvichienderana nenzira yekudziyisa.

Mabasa makuru e epitaxial barrel susceptor:

1. Kutakura Wafer uye Kudzora Tembiricha
Nzvimbo ye susceptor yakagadzirwa nema wafer homwe akawanda (akadai se hexagonal kana octagonal arrangement), ayo anogona kutsigira ma wafer 6-15 panguva imwe chete. Kufambiswa kwekushisa kwakanyanya kwe high-purity graphite (120-150W/mK) kunoita kuti kupisa kupfuure nekukurumidza, pamwe chete ne rotation function (5-20 RPM), zvichikonzera kutsauka kwekushisa kwepamusoro pe wafer kwe<± 1 ℃ uye epitaxial layer thickness ye<1%.

2. Kugadzirisa nzira yekuyerera kwegasi rinoita reactant
Magadzirirwo emukati me susceptor anogona kuputsa mhedzisiro ye boundary layer, zvichibvumira kupararira kwakafanana kwemagasi e reaction (akadai seSiH4, NH3) uye kuvandudza kuenderana kwehuwandu hwe deposition rate.

3. Dziviriro yekudzivirira kusvibiswa uye ngura
Zvigadziko zveGraphite zvinogona kuora nekuburitsa tsvina yesimbi (yakadai seFe,Ni) pakupisa kwakanyanya, nepo CVD SiC coating ine ukobvu hwe100μm inogona kuumba chipingamupinyi chakakora chekudzivisa kuputika kwegraphite, zvichikonzera mwero wekukanganisa kwewafer we<0.1 defects/cm².

Mashandisirwo:
-Inonyanya kushandiswa pakukura kwesilicon epitaxial
-Inoshandawo kune epitaxy yezvimwe zvinhu zve semiconductor zvakaita seGaAs, InP, nezvimwewo.

VET Energy inoshandisa graphite yakachena kwazvo ine CVD-SiC coating kuti iwedzere kugadzikana kwemakemikari:

1. Zvinhu zvegraphite zvakachena zvakanyanya
Kupisa kwakanyanya: graphite inopfuudza kupisa katatu kupfuura silicon, iyo inogona kutamisa kupisa nekukurumidza kubva kunzvimbo yekupisa kuenda ku wafer uye kupfupisa nguva yekupisa.
Simba remuchina: Kuwanda kwegirafiti inomanikidzwa neisostatic ≥ 1.85 g/cm³, inokwanisa kutsungirira tembiricha yepamusoro pamusoro pe1200 ℃ isina kuchinja.

2. Kuputira kweCVD SiC
Rutivi rwe β - SiC runoumbwa pamusoro pe graphite ne chemical vapor deposition (CVD), rune kuchena kwe ≥ 99.99995%, chikanganiso chekuenzana kweukobvu hwekufukidza chiri pasi pe ±5%, uye kuomarara kwepamusoro kuri pasi pe Ra0.5um.

3. Kuvandudza mashandiro:
Kuramba ngura: inogona kutsungirira magasi anopisa akadai seCl2, HCl, nezvimwewo, inogona kuwedzera hupenyu hweGaN epitaxy katatu munzvimbo yeNH3.
Kugadzikana kwekupisa: Kuwanda kwekuwedzera kwekupisa (4.5 × 10-6/℃) kunoenderana negirafiti kudzivirira kutsemuka kwejira kunokonzerwa nekuchinja-chinja kwekupisa.
Kuomarara uye Kusapfeka: Kuomarara kweVickers kunosvika 28 GPa, iyo yakapetwa kagumi pane graphite uye inogona kuderedza njodzi yekukwenya kwewafer.