Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorndeye yakanyatsogadzirirwa rutsigiro uye yekudziya mudziyo unoshandiswa kubata uye kupisa semiconductor substrates panguva yekugadzira maitiro seDeposition kana Epitaxy maitiro.

Chimiro chayo chinosanganisira anowanzo cylindrical kana zvishoma mbiya-yakaita, pamusoro inoratidzira akawanda homwe kana mapuratifomu ekuisa mawaferi, anogona kuve akasimba kana maburi dhizaini, zvichienderana nenzira yekudziya.

Iwo makuru mabasa epitaxial barrel susceptor:

1. Wafer Carrier uye Temperature Control
Iyo susceptor yepamusoro yakagadzirwa iine akawanda wafer homwe (senge hexagonal kana octagonal kurongeka), iyo inogona kutsigira 6-15 wafers panguva imwe chete. Iyo yakanyanya kupisa conductivity ye-high-purity graphite (120-150W/mK) inovimbisa kukurumidza kupisa kupisa, kusanganiswa nekutenderera basa (5-20 RPM), zvichikonzera kutsauka kwekushisa kwepamusoro kwe<± 1 ℃ uye epitaxial layer ukobvu kufanana kwe<1%.

2. Optimization of reactant gas flow direction
Iyo microstructure ye susceptor surface inogona kutyora muganho dhizaini mhedzisiro, ichibvumira kugovera kwakafanana kwemagasi ekuita (senge SiH4, NH3) nekuvandudza kuenderana kweyero deposition.

3. Anti kusvibiswa uye anti-corrosion kudzivirira
Graphite substrates inowanzoora uye kuburitsa tsvina yesimbi (yakadai seFe, Ni) pakupisa kwakanyanya, ukuwo 100μm gobvu CVD SiC coating inogona kuumba dense chipingamupinyi kudzvanyirira graphite volatilization, zvichikonzera kuwanda kwewafer defect ye<0.1 defects/cm².

Applications:
-Inonyanya kushandiswa silicon epitaxial kukura
-Inoshandawo kune epitaxy yezvimwe semiconductor zvinhu seGaAs, InP, nezvimwe.

VET Energy inoshandisa yakakwira kuchena graphite neCVD-SiC coating kusimudzira kugadzikana kwemakemikari:

1. High kuchena graphite zvinhu
High thermal conductivity: thermal conductivity ye graphite yakapetwa katatu iyo yesilicon, iyo inogona kukurumidza kutamisa kupisa kubva kune inopisa sosi kusvika kune wafer uye kupfupisa nguva yekupisa.
Mechanical simba: Isostatic pressure graphite density ≥ 1.85 g/cm ³, inokwanisa kushingirira tembiricha yepamusoro pamusoro pe1200 ℃ pasina deformation.

2. CVD SiC kupfeka
A β - SiC layer inoumbwa pamusoro pegraphite nekemikari vapor deposition (CVD), ine kuchena kwe ≥ 99.99995%, kukanganisa kwakafanana kwekuputira ukobvu kunodarika ± 5%, uye kushata kwepamusoro kuri pasi peRa0.5um.

3. Kuvandudzwa kwekuita:
Corrosion resistance: inogona kumirisana nemagasi anoodza zvakanyanya seCl2, HCl, nezvimwewo, inogona kuwedzera hupenyu hweGaN epitaxy katatu munzvimbo yeNH3.
Thermal kugadzikana: The coefficient of thermal expansion (4.5 × 10-6 / ℃) inofananidzwa negraphite kuti irege kuvhara kuputika kunokonzerwa nekushanduka kwekushisa.
Kuoma uye Kupfeka Kuramba: Kuoma kweVickers kunosvika 28 GPa, iyo yakapetwa ka10 kupfuura graphite uye inogona kuderedza njodzi yezvimedu zvewafer.