Barela hoʻopilihe mea koʻikoʻi i nā kaʻina ulu epitaxial semiconductor e like me MOCVD, MBE, CVD. Hoʻohana nui ʻia ia e lawe i nā wafers i loko o nā keʻena hoʻonā wela kiʻekiʻe a hāʻawi i kahi ʻano ākea a paʻa i ke kahua wela e hōʻoia i ka waiho ʻana o nā papa epitaxial (e like me GaN, SiC, etc.). ʻO kāna hana koʻikoʻi ka hoʻokō ʻana i ke kūlike kiʻekiʻe o ka mahana o ka wafer ma o ka hoʻomalu ʻana i ka māla wela, a laila e hōʻoiaʻiʻo ai i ka mānoanoa, ka manaʻo doping, a me ka hoʻohālikelike ʻana o ke aniani o nā kiʻiʻoniʻoni epitaxial.
Hoʻohana mākou i kā mākou ʻenehana patented e hana i kabarrel susceptorme ka hoʻomaʻemaʻe kiʻekiʻe loa, ka like ʻana o ka uhi ʻana a me ke ola lawelawe maikaʻi loa, a me ke kūpaʻa kemika kiʻekiʻe a me nā waiwai paʻa wela.
Hoʻohana ʻo VET Energy i ka graphite maʻemaʻe kiʻekiʻe me ka uhi CVD-SiC e hoʻomaikaʻi i ke kūpaʻa kemika:
1. High maemae graphite mea
ʻO ka conductivity thermal kiʻekiʻe: ʻo ka conductivity thermal o ka graphite he ʻekolu manawa o ka silicon, hiki ke hoʻololi koke i ka wela mai ke kumu hoʻomehana i ka wafer a hoʻopōkole i ka manawa hoʻomehana.
Mechanical ikaika: Isostatic pressure graphite density ≥ 1.85 g/cm ³, hiki ke kū i nā wela kiʻekiʻe ma luna o 1200 ℃ me ka ʻole deformation.
2. CVD SiC uhi
Hoʻokumu ʻia kahi papa β - SiC ma ka ʻili o ka graphite e ka hoʻoheheʻe ʻana i ka mahu (CVD), me ka maʻemaʻe o ≥ 99.99995%, ʻo ka hapa like ʻole o ka mānoanoa o ka uhi ʻana ma lalo o ± 5%, a ʻoi aku ka liʻiliʻi o ka roughness ma mua o Ra0.5um.
3. Hoʻomaikaʻi i ka hana:
ʻO ke kūpaʻa ʻino: hiki ke kū i nā kinoea corrosive kiʻekiʻe e like me Cl2, HCl, a me nā mea ʻē aʻe, hiki ke hoʻolōʻihi i ke ola o GaN epitaxy i ʻekolu mau manawa ma ke kaiapuni NH3.
ʻO ke kūpaʻa wela: ʻO ke koena o ka hoʻonui wela (4.5 × 10-6/℃) pili i ka graphite e pale aku i ka haki ʻana o ka uhi ma muli o ka loli ʻana o ka mahana.
ʻO ka paʻakikī a me ka pale ʻana: ʻO ka paʻakikī Vickers hiki i ka 28 GPa, ʻo ia ka 10 mau manawa kiʻekiʻe ma mua o ka graphite a hiki ke hōʻemi i ka pilikia o ka wafer scratches.
| CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCka uhi ʻana | |
| 性质 / Waiwai | 典型数值 / Waiwai maʻamau |
| 晶体结构 / Hoʻomoe Crystal | Māhele FCC β多晶，主要为（111）取向 |
| 密度 / Paʻa | 3.21 g/cm³ |
| 硬度 / Oolea | 2500 维氏硬度（500g load） |
| 晶粒大小 / ʻAiʻa palaoa | 2~10μm |
| 纯度 / Maemae Kemika | 99.99995% |
| 热容 / Hikina Wela | 640 J·kg-1·K-1 |
| 升华温度 / Kaumaha Sublimation | 2700 ℃ |
| 抗弯强度 / Ka Ikaika Pilikia | 415 MPa RT 4-point |
| 杨氏模量 / 'Ōpio's Modulus | 430 Gpa 4pt piko, 1300 ℃ |
| 导热系数 / ThermalʻO ka hoʻokō | 300W·m-1·K-1 |
| 热膨胀系数 / Hoʻonui wela (CTE) | 4.5×10-6K-1 |
ʻO Ningbo VET Energy Technology Co., Ltd kahi ʻoihana ʻenehana kiʻekiʻe e kālele ana i ka hoʻomohala ʻana a me ka hana ʻana i nā mea kiʻekiʻe kiʻekiʻe, nā mea a me nā ʻenehana me ka graphite, silicon carbide, ceramics, surface treatment like SiC coating, TaC coating, glassy carbon coating, pyrolytic carbon coating, etc.
Hele mai kā mākou hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, a ua hoʻomohala i nā ʻenehana patented he nui e hōʻoia i ka hana a me ka maikaʻi o ka huahana, hiki nō hoʻi ke hāʻawi i nā mea kūʻai aku i nā ʻoihana ʻoihana.
