Mea hoʻopaʻa barelaʻO ia kekahi ʻāpana koʻikoʻi i nā kaʻina hana ulu epitaxial semiconductor e like me MOCVD, MBE, CVD. Hoʻohana nui ʻia ia e lawe i nā wafers i loko o nā keʻena hopena wela kiʻekiʻe a hāʻawi i kahi kahua thermal like a paʻa hoʻi e hōʻoia i ka waiho pololei ʻana o nā papa epitaxial (e like me GaN, SiC, a pēlā aku). ʻO kāna hana nui ka hoʻokō ʻana i ke ʻano like o ka mahana o ka ʻili wafer ma o ka kaohi ʻana i ke kahua thermal pololei, no laila e hōʻoiaʻiʻo ana i ka mānoanoa, ka hoʻohuihui doping, a me ke ʻano like o ke ʻano kristal o nā kiʻiʻoniʻoni lahilahi epitaxial.
Hoʻohana mākou i kā mākou ʻenehana i hoʻopaʻa ʻia e hana i kamea hoʻopaʻa pahume ka maʻemaʻe kiʻekiʻe loa, ke ʻano like o ka uhi ʻana a me ke ola lawelawe maikaʻi loa, a me ke kūpaʻa kemika kiʻekiʻe a me nā waiwai kūpaʻa wela.
Hoʻohana ʻo VET Energy i ka graphite maʻemaʻe kiʻekiʻe me ka uhi CVD-SiC e hoʻoikaika i ke kūpaʻa kemika:
1. Mea graphite maʻemaʻe kiʻekiʻe
ʻO ke alakaʻi wela kiʻekiʻe: ʻekolu manawa o ke alakaʻi wela o ka graphite o ka silicon, hiki ke hoʻoili koke i ka wela mai ke kumu hoʻomehana i ka wafer a hoʻopōkole i ka manawa hoʻomehana.
Ikaika mīkini: ʻO ka nui o ke kaomi graphite isostatic ≥ 1.85 g/cm³, hiki ke kū i nā mahana kiʻekiʻe ma luna o 1200 ℃ me ka ʻole o ka deformation.
2. Uhi ʻana o CVD SiC
Hoʻokumu ʻia kahi papa β - SiC ma luna o ka ʻili o ka graphite e ka hoʻokahe ʻana o ka mahu kemika (CVD), me ka maʻemaʻe o ≥ 99.99995%, ʻoi aku ka hewa like o ka mānoanoa o ka uhi ʻana ma mua o ± 5%, a ʻoi aku ka liʻiliʻi o ka ʻili ma mua o Ra0.5um.
3. Hoʻomaikaʻi ʻana i ka hana:
Ke kūpaʻa ʻana i ka palaho: hiki ke kū i nā kinoea palaho kiʻekiʻe e like me Cl2, HCl, a pēlā aku, hiki ke hoʻolōʻihi i ke ola o GaN epitaxy i ʻekolu manawa i loko o ke kaiapuni NH3.
Paʻa wela: Hoʻohālikelike ke koina o ka hoʻonui wela (4.5 × 10-6/℃) me ka graphite e pale aku i ka haki ʻana o ka uhi i hoʻokumu ʻia e nā loli o ka mahana.
Paʻakikī a me ke Kū'ē ʻana i ka ʻAʻahu: Hiki i ka paʻakikī Vickers i 28 GPa, ʻo ia hoʻi he 10 mau manawa kiʻekiʻe ma mua o ka graphite a hiki ke hōʻemi i ka pilikia o nā ʻōpala wafer.
| CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCuhi ʻana | |
| 性质 / Waiwai | 典型数值 / Waiwai Maʻamau |
| 晶体结构 / ʻAno Crystal | Pae FCC β多晶,主要为(111)取向 |
| 密度 / Ka nui o ka paʻa | 3.21 g/cm³ |
| 硬度 / Paʻakikī | 2500 维氏硬度(500g load) |
| 晶粒大小 / Ka nui o ka palaoa | 2~10μm |
| 纯度 / Maʻemaʻe Kemika | 99.99995% |
| 热容 / Ka Mana Wela | 640 J·kg-1·K-1 |
| 升华温度 / Mahana Hoʻohaʻahaʻa | 2700℃ |
| 抗弯强度 / Ikaika Flexural | 415 MPa RT 4-kiko |
| 杨氏模量 / Modulus o Young | 430 Gpa 4pt kūlou, 1300 ℃ |
| 导热系数 / ThermalKa hoʻokele ʻana | 300W·m-1·K-1 |
| 热膨胀系数 / Hoʻonui Wela (CTE) | 4.5×10-6K-1 |
ʻO Ningbo VET Energy Technology Co., Ltd kahi ʻoihana ʻenehana kiʻekiʻe e kālele ana i ka hoʻomohala ʻana a me ka hana ʻana o nā mea holomua kiʻekiʻe, nā mea hana a me nā ʻenehana e pili ana i ka graphite, silicon carbide, keramika, ka mālama ʻili e like me ka SiC coating, TaC coating, glassy carbon coating, pyrolytic carbon coating, etc., ua hoʻohana nui ʻia kēia mau huahana i ka photovoltaic, semiconductor, ikehu hou, metallurgy, etc.
Hele mai kā mākou hui loea mai nā ʻoihana noiʻi kūloko kiʻekiʻe, a ua hoʻomohala i nā ʻenehana i hoʻopaʻa ʻia he nui e hōʻoia i ka hana huahana a me ka maikaʻi, hiki ke hāʻawi i nā mea kūʻai aku me nā hoʻonā mea ʻoihana.
-
ʻO ka mea hana uhi ʻo Tantalum Carbide (TaC) ma ...
-
ʻO ke koʻokoʻo Graphite i hoʻoluʻu ʻia
-
ʻO ke apo graphite a me ke kalapona me ke kumu kūʻai maikaʻi
-
Electronic EMP graphite EMP uʻi lima lima kiʻekiʻe ...
-
ʻŌnaehana Mana Kelepona Wahie Hydrogen Pemfc Stack 2000w
-
Kiʻikuhi pamu ʻōpala graphite kiʻekiʻe-density...




