Baakad Cantilever SiC Sare oo loogu talagalay Habaynta Wafer

Sawirka Soo-bandhigay ee SiC Cantilever Paddle ee Sare ee Habaynta Wafer

Sharaxaad Gaaban:

Qalabka lagu farsameeyo Cantilever-ka ee Sare ee SiC Cantilever Paddle ee loogu talagalay Wafer Processing oo ay bilowday vet-china wuxuu adeegsadaa agabyo SiC oo casri ah si loo hagaajiyo hufnaanta iyo saxnaanta habka loo farsameeyo wafer-ka. Qalabka lagu farsameeyo cantilever-ka ee Vet-china wuxuu leeyahay iska caabin kulayl oo aad u fiican iyo iska caabin daxaleed, taasoo hubinaysa waxqabadka maaraynta waferka ee deggan deegaannada wax soo saarka ee adag, taasoo ka dhigaysa doorasho ku habboon oo lagu hagaajinayo wax soo saarka.

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Calaamadaha Alaabta

Heerka SareBaakad SiC Cantilever ahWafer Processing oo ay samaysay vet-china waxay bixisaa xal aad u fiican oo loogu talagalay wax soo saarka semiconductor-ka. Cantilever-kan waxa laga sameeyay walxo SiC (silicon carbide), adkaanshihiisa sare iyo iska caabbinta kulaylkana waxay awood u siinayaan inay ilaaliyaan waxqabad heer sare ah oo ku yaal jawi heerkul sare iyo daxal leh. Naqshadeynta Cantilever Paddle waxay u oggolaanaysaa in wafer-ka si kalsooni leh loogu taageero inta lagu jiro farsamaynta, taasoo yaraynaysa khatarta kala-goynta iyo dhaawaca.

Baakad SiC Cantilever ahwaa qayb gaar ah oo loo isticmaalo qalabka wax soo saarka semiconductor-ka sida foornada oksaydhka, foornada faafinta, iyo foornada dab-damiska, isticmaalka ugu weyn waa rarista iyo dejinta wafer-ka, taageerada iyo rarista wafer-ka inta lagu jiro hababka heerkulka sare.

Qaab-dhismeedyada guudeeSiCcantileverpaddle: qaab-dhismeedka cantilever-ka, oo laga taagay dhinac dhinacna ka xor ah dhinaca kale, badanaa wuxuu leeyahay naqshad siman oo u eg taayir.

Tamarta VET waxay isticmaashaa walxo silikoon carbide ah oo nadiif ah oo dib loo warshadeeyay si loo hubiyo tayada.

Sifooyinka Jireed ee Silicon Carbide-ka Dib loo Dib-u-habeeyey
Hantida	Qiimaha Caadiga ah
Heerkulka shaqada (°C)	1600°C (oo leh ogsijiin), 1700°C (deegaan yareynaya)
Waxyaabaha ku jira SiC	> 99.96%
Mawduuc Bilaash ah oo Si ah	< 0.1%
Cufnaanta badan	2.60-2.70 g/cm³
Daloolo muuqata	< 16%
Xoogga cadaadiska	> 600MPA
Xoogga laabashada qabow	80-90 MPa (20°C)
Xoogga foorarsiga kulul	90-100 MPa (1400°C)
Ballaarinta kulaylka @1500°C	4.70 10^-6/°C
Qaboojinta kulaylka @1200°C	23W/m•K
Modulus-ka dabacsan	240 GPA
Iska caabinta shoogga kulaylka	Aad u wanaagsan