Sumowga Foostowaa qayb muhiim ah oo ka mid ah hababka koritaanka epitaxial semiconductor sida MOCVD, MBE, CVD. Waxaa inta badan loo isticmaalaa in lagu qaado wafers-ka qolalka falcelinta heerkulka sare iyo in la bixiyo jawi isku mid ah oo deggan oo kuleyl ah si loo hubiyo dhigista saxda ah ee lakabyada epitaxial (sida GaN, SiC, iwm.). Shaqadeeda asaasiga ah waa in la gaaro isku midnimo sare oo heerkulka dusha sare ee wafer ah iyada oo loo marayo xakamaynta saxda ah ee goobta kulaylka, sidaas darteedna la hubiyo dhumucda, fiirsashada daawada, iyo isku midnimada qaab-dhismeedka kiristaalka ee filimada khafiifka ah ee epitaxial.
Waxaan isticmaalnaa teknoolojiyadeenna shatiga leh si aan u sameynosuuxdinta foostooo leh daahirnimo aad u sarreysa, isku-midnimo dahaadh wanaagsan iyo nolol adeeg oo aad u fiican, iyo sidoo kale iska caabin kiimiko oo sare iyo sifooyin xasillooni kuleyl.
Tamarta VET waxay isticmaashaa graphite saafi ah oo heer sare ah oo leh dahaarka CVD-SiC si kor loogu qaado xasilloonida kiimikada:
1. Walax graphite ah oo saafi ah oo sare
Gudbinta kulaylka sare: Gudbinta kulaylka ee graphite waa saddex jeer ka badan silicon, taas oo si dhakhso ah u wareejin karta kulaylka isha kuleylinta una gaabin karta wafer-ka waxayna gaabin kartaa wakhtiga kululaynta.
Xoogga farsamada: Cufnaanta garaafka cadaadiska ee isostatic ≥ 1.85 g/cm³, oo awood u leh inay u adkaysato heerkulka sare ee ka sarreeya 1200 ℃ iyada oo aan lahayn isbeddel.
2. Dahaarka CVD SiC
Lakabka A β - SiC waxaa lagu sameeyaa dusha sare ee garaafka iyadoo la adeegsanayo kaydinta uumiga kiimikada (CVD), iyadoo daahirnimadu tahay ≥ 99.99995%, qaladka isku midka ah ee dhumucda dahaarka ayaa ka yar ± 5%, qallafsanaanta dusha sarena waa ka yar tahay Ra0.5um.
3. Horumarinta waxqabadka:
Iska caabbinta daxalka: waxay u adkeysan kartaa gaasaska sunta badan sida Cl2, HCl, iwm., waxay kordhin kartaa cimriga GaN epitaxy saddex jeer deegaanka NH3.
Xasiloonida kulaylka: Isugeynta ballaarinta kulaylka (4.5 × 10-6/℃) waxay la mid tahay garaafka si looga fogaado dillaaca dahaarka oo ay keento isbeddellada heerkulka.
Adkaanshaha iyo Adkeysiga Xirashada: Adkaanshaha Vickers wuxuu gaaraa 28 GPa, taasoo 10 jeer ka badan graphite wuxuuna yarayn karaa khatarta xoqidda wafer.
| CVD SiC薄膜基本物理性能 Sifooyinka aasaasiga ah ee jireed ee CVD SiCdahaarka | |
| 性质 / Hantida | 典型数值 / Qiimaha Caadiga ah |
| 晶体结构 / Qaab-dhismeedka Crystal | Marxaladda FCC β多晶,主要为(111) 取向 |
| 密度 / Cufnaanta | 3.21 g/cm³ |
| 硬度 / Adkaanta | 2500 维氏硬度(500g oo culeys ah |
| 晶粒大小 / Xaddiga Badarka | 2 ~ 10μm |
| 纯度 / Nadiifinta Kiimikada | 99.99995% |
| 热容 / Awoodda Kulaylka | 640 J·kg-1·K-1 |
| 升华温度 / Heerkulka Sublimation | 2700℃ |
| 抗弯强度 / Xoogga Laablaabashada | 415 MPa RT 4-dhibcood |
| 杨氏模量 / Modulus-ka Young | 430 GPA 4pt laab, 1300℃ |
| 导热系数 / ThermalGudbinta | 300W·m-1·K-1 |
| 热膨胀系数 / Ballaarinta Kulaylka (CTE) | 4.5 × 10-6K-1 |
Ningbo VET Energy Technology Co., Ltd waa shirkad tiknoolajiyad sare leh oo diiradda saareysa horumarinta iyo soo saarista agabyada horumarsan ee heerka sare ah, agabka iyo tiknoolajiyada oo ay ku jiraan graphite, silicon carbide, dhoobada, daaweynta dusha sare sida dahaarka SiC, dahaarka TaC, dahaarka kaarboonka galaaska ah, dahaarka kaarboonka pyrolytic, iwm., alaabadan waxaa si weyn loogu isticmaalaa sawir-qaadista, semiconductor-ka, tamarta cusub, birta, iwm.
Kooxdayada farsamo waxay ka yimaadaan hay'adaha cilmi-baarista ee ugu sarreeya gudaha, waxayna soo saareen teknoolojiyado badan oo shati haysta si loo hubiyo waxqabadka iyo tayada badeecada, waxayna sidoo kale macaamiisha siin karaan xalal agab xirfadeed.
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