Igikoresho cyo gukurura imbundani igice cy'ingenzi mu mikurire ya epitaxial ya semiconductor nka MOCVD, MBE, CVD. Ikoreshwa cyane cyane mu gutwara wafers mu byumba bifite ubushyuhe bwinshi kandi igatanga ibidukikije bihamye kandi bihamye byo mu murima w'ubushyuhe kugira ngo habeho gushyira neza urwego rwa epitaxial (nka GaN, SiC, nibindi). Inshingano yayo y'ingenzi ni ukugira ubushyuhe bungana cyane bwo hejuru bw'ubushyuhe binyuze mu kugenzura neza urwego rw'ubushyuhe, bityo ikagenzura neza ubunini, ubwinshi bw'imiti ikoreshwa mu gupima, n'imiterere ya kristu y'amafilimi magufi ya epitaxial.
Dukoresha ikoranabuhanga ryacu rifite patenti kugira ngo dukoreicyuma gifata umuyoboroifite ubuziranenge buhanitse cyane, ifite irangi ryiza kandi ikora neza, ndetse ikaba ifite ubushobozi bwo kudakoresha imiti myinshi ndetse n'ubushobozi bwo kudahindagurika mu bushyuhe.
VET Energy ikoresha grafiti nziza cyane hamwe n'imvange ya CVD-SiC kugira ngo yongere ubuziranenge bw'ibinyabutabire:
1. Ibikoresho bya grafiti bifite isuku nyinshi
Ubushobozi bwo gutwara ubushyuhe bwinshi: ubushobozi bwo gutwara ubushyuhe bwa grafiti bukubye inshuro eshatu ugereranyije na silicon, bushobora kwimura ubushyuhe vuba buva ku isoko y'ubushyuhe bujya kuri wafer kandi bukagabanya igihe cyo gushyushya.
Ingufu za mekanike: Ubucucike bwa grafiti y'umuvuduko wa isostatic ≥ 1.85 g/cm³, ishobora kwihanganira ubushyuhe bwinshi buri hejuru ya 1200 ℃ idahinduka.
2. Gutwikira CVD SiC
Urusobe rwa β - SiC rukorwa ku buso bwa grafiti hakoreshejwe uburyo bwa chemical vapor deposition (CVD), rufite ubuziranenge bwa ≥ 99.99995%, ikosa ry’ubunini bw’igitambaro ni munsi ya ± 5%, kandi ubukana bw’ubuso buri munsi ya Ra0.5um.
3. Kunoza imikorere:
Ubudahangarwa ku ngaruka: ishobora kwihanganira imyuka myinshi yangiza nka Cl2, HCl, nibindi, ishobora kongera igihe cyo kubaho cya GaN epitaxy inshuro eshatu mu bidukikije bya NH3.
Gukomera ku bushyuhe: Igipimo cy'ubwiyongere bw'ubushyuhe (4.5 × 10-6/℃) gihuye na grafiti kugira ngo hirindwe ko irangi ricika bitewe n'ihindagurika ry'ubushyuhe.
Ubukomere n'Ubudahangarwa: Ubukomere bwa Vickers bugera kuri 28 GPa, bungana n'inshuro 10 kurusha grafiti kandi bushobora kugabanya ibyago byo gushwanyagurika kwa wafer.
| CVD SiC薄膜基本物理性能 Imiterere y'ibanze ya CVD SiCgusiga | |
| 性质 / Umutungo | 典型数值 / Agaciro Gasanzwe |
| 晶体结构 / Imiterere ya kristu | Icyiciro cya FCC β多晶,主要为(111 )取向 |
| 密度 / Ubucucike | 3.21 g/cm³ |
| 硬度 / Ubukomere | 2500 维氏硬度( 500g umutwaro) |
| 晶粒大小 / Ubunini bw'ibinyampeke | 2 ~ 10μm |
| 纯度 / Ubuziranenge bw'ibinyabutabire | 99.99995% |
| 热容 / Ubushobozi bwo gushyuha | 640 J·kg-1·K-1 |
| 升华温度 / Ubushyuhe bwo gushyuha | 2700℃ |
| 抗弯强度 / Imbaraga zo Kongera Uburemere | 415 MPa RT ifite amanota 4 |
| 杨氏模量 / Modulus y'Abana | 430 Gpa 4pt bend, 1300℃ |
| 导热系数 / ThermalUbushobozi bwo kuyobora | 300W·m-1·K-1 |
| 热膨胀系数 / Kwagura ubushyuhe (CTE) | 4.5×10-6K-1 |
Ningbo VET Energy Technology Co., Ltd ni ikigo gikoresha ikoranabuhanga rihanitse cyibanda ku iterambere n'umusaruro w'ibikoresho bigezweho, ibikoresho n'ikoranabuhanga birimo grafiti, silicon carbide, ceramics, gutunganya ubuso nko gusiga SiC, gusiga TaC, gusiga karuboni ikirahure, gusiga karuboni ikoze muri pyrolytic, nibindi, ibi bicuruzwa bikoreshwa cyane mu gusiga photovoltaic, semiconductor, ingufu nshya, metallurgy, nibindi.
Itsinda ryacu rya tekiniki rikomoka mu bigo bikomeye by’ubushakashatsi mu gihugu, kandi ryakoze ikoranabuhanga ryihariye rijyanye n’ibiciro kugira ngo rirebe ko ibicuruzwa bikora neza kandi bifite ireme, rishobora kandi guha abakiriya ibisubizo by’ibikoresho by’umwuga.
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