Customer SiC Coated Barrel Susceptor

Barrel susceptorni ikintu cyibanze muri semiconductor epitaxial inzira yo gukura nka MOCVD, MBE, CVD. Ikoreshwa cyane cyane mu gutwara wafer mucyumba cy’ubushyuhe bwo hejuru kandi ikanatanga ibidukikije bihamye kandi bihamye kugira ngo harebwe neza ibyorezo bya epitaxial (nka GaN, SiC, nibindi). Igikorwa cyacyo nyamukuru ni ukugera ku bushyuhe bwo hejuru bwubushyuhe bwa wafer hifashishijwe kugenzura neza ubushyuhe bwumurima, bityo bigatuma ubwinshi, ubunini bwa doping, hamwe nuburyo bwa kristu buringaniye bwa firime epitaxial thin.

Dukoresha tekinoroji yatanzwe kugirango dukorebarrelhamwe nubuziranenge buhebuje, uburinganire bwiza hamwe nubuzima bwiza bwa serivisi, hamwe n’imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.

VET Ingufu zikoresha grafite isukuye cyane hamwe na CVD-SiC kugirango yongere imiti ihamye:

1. Ibikoresho byiza bya grafite
Ubushyuhe bukabije bwumuriro: ubushyuhe bwumuriro wa grafite bwikubye inshuro eshatu ubwa silikoni, bushobora kwimura vuba ubushyuhe buturuka kumashyuza kuri wafer kandi bigabanya igihe cyo gushyuha.
Imbaraga za mashini: Umuvuduko wa Isostatike grafite ubucucike 85 1.85 g / cm ³, ushobora guhangana nubushyuhe bwo hejuru hejuru ya 1200 ℃ nta guhindagurika.

2. CVD SiC
A β - Igice cya SiC gikozwe hejuru ya grafite hifashishijwe imyuka ya chimique (CVD), ifite ubuziranenge bwa ≥ 99.99995%, ikosa rimwe ryo gutwikisha umubyimba ntiri munsi ya ± 5%, kandi ubukana bwubuso buri munsi ya Ra0.5um.

3. Kunoza imikorere:
Kurwanya ruswa: irashobora kwihanganira imyuka myinshi yangirika nka Cl2, HCl, nibindi, irashobora kongera igihe cya epitaxy ya GaN inshuro eshatu mubidukikije bya NH3.
Ubushyuhe bwumuriro: Coefficent yo kwaguka kwubushyuhe (4.5 × 10-6 / ℃) ihuye na grafite kugirango wirinde guturika biturutse ku ihindagurika ryubushyuhe.
Gukomera no Kwambara Kurwanya: Ubukomezi bwa Vickers bugera kuri 28 GPa, bukubye inshuro 10 kurenza grafite kandi burashobora kugabanya ibyago byo gushushanya wafer.