Sesupa-moqomo sa moqomoke karolo ea bohlokoa lits'ebetsong tsa kholo ea epitaxial ea semiconductor joalo ka MOCVD, MBE, CVD. E sebelisoa haholo ho jara li-wafer ka likamoreng tsa karabelo ea mocheso o phahameng le ho fana ka tikoloho e ts'oanang le e tsitsitseng ea tšimo ea mocheso ho netefatsa ho beoa ka nepo ha likarolo tsa epitaxial (joalo ka GaN, SiC, jj.). Mosebetsi oa eona oa mantlha ke ho fihlela ho lekana ho hoholo ha mocheso oa bokaholimo ba wafer ka taolo e nepahetseng ea tšimo ea mocheso, ka hona ho netefatsa botenya, mahloriso a doping, le ho tšoana ha sebopeho sa kristale sa lifilimi tse tšesaane tsa epitaxial.
Re sebelisa theknoloji ea rona e nang le patent ho etsasesebelisoa sa ho thibela libareleka bohloeki bo phahameng haholo, ho tšoana hantle ha ho roala le bophelo bo botle ba ts'ebeletso, hammoho le khanyetso e phahameng ea lik'hemik'hale le thepa ea botsitso ba mocheso.
VET Energy e sebelisa graphite e hloekileng haholo e nang le sekoahelo sa CVD-SiC ho ntlafatsa botsitso ba lik'hemik'hale:
1. Bohloeki bo phahameng ba graphite
Ho tsamaisa mocheso ka matla a phahameng: ho tsamaisa mocheso ka matla a graphite ho feta silicon ka makhetlo a mararo, e leng se ka fetisang mocheso ka potlako ho tloha mohloling oa ho futhumatsa ho ea ho wafer le ho khutsufatsa nako ea ho futhumatsa.
Matla a mechini: Khatello ea Isostatic graphite density ≥ 1.85 g/cm³, e khona ho mamella mocheso o phahameng o kaholimo ho 1200 ℃ ntle le ho fetoha.
2. Seaparo sa CVD SiC
Lera la β - SiC le thehoa holim'a graphite ka ho kenngoa ha mouoane oa lik'hemik'hale (CVD), ka bohloeki ba ≥ 99.99995%, phoso ea ho tšoana ha botenya ba ho roala e ka tlase ho ± 5%, 'me ho teteana ha bokaholimo ho ka tlase ho Ra0.5um.
3. Ntlafatso ea ts'ebetso:
Ho hanyetsa ts'enyeho: e ka mamella likhase tse ngata tse senyang tse kang Cl2, HCl, jj., e ka eketsa nako ea bophelo ea GaN epitaxy ka makhetlo a mararo tikolohong ea NH3.
Ho tsitsa ha mocheso: Koefficient ea katoloso ea mocheso (4.5 × 10-6/℃) e ts'oana le graphite ho qoba ho petsoha ha ho petsoha ho bakoang ke ho feto-fetoha ha mocheso.
Ho Tiea le ho Hanela ho Tshabala: Bothata ba Vickers bo fihla ho 28 GPa, e leng bo phahameng ka makhetlo a 10 ho feta graphite mme bo ka fokotsa kotsi ya ho ngoatheha ha wafer.
| CVD SiC薄膜基本物理性能 Thepa ea motheo ea 'mele ea CVD SiCsekoahelo | |
| 性质 / Thepa | 典型数值 / Boleng bo Tloaelehileng |
| 晶体结构 / Sebopeho sa kristale | Mokhahlelo oa FCC β多晶，主要為（111）取向 |
| 密度 / Botenya | 3.21 g/cm³ |
| 硬度 / Bothata | 2500 维氏硬度 (moroalo oa 500g) |
| 晶粒大小 / Sekala sa Lithollo | 2 ~ 10μm |
| 纯度 / Bohloeki ba Lik'hemik'hale | 99.99995% |
| 热容 / Bokgoni ba Mocheso | 640 J·kg-1·K-1 |
| 升华温度 / Mocheso oa Sublimation | 2700℃ |
| 抗弯强度 / Matla a ho Kobeha | 415 MPa RT lintlha tse 4 |
| 杨氏模量 / Modulus ea Bacha | 430 Gpa kobeho ea 4pt, 1300℃ |
| 导热系数 / ThermalHo khanna motlakase | 300W·m-1·K-1 |
| 热膨胀系数 / Katoloso ea Thermal (CTE) | 4.5×10-6K-1 |
Ningbo VET Energy Technology Co., Ltd ke kgwebo ya theknoloji e phahameng e shebaneng le ntshetsopele le tlhahiso ya thepa e tsoetseng pele ya maemo a hodimo, thepa le theknoloji ho kenyeletswa graphite, silicon carbide, ceramics, kalafo ya bokahodimo jwalo ka SiC coating, TaC coating, khalase carbon coating, pyrolytic carbon coating, jj., dihlahiswa tsena di sebediswa haholo ho photovoltaic, semiconductor, new eneji, metallurgy, jj.
Sehlopha sa rona sa botekgeniki se tsoa litsing tse holimo tsa lipatlisiso tsa lehae, 'me se ntlafalitse mahlale a mangata a nang le patente ho netefatsa ts'ebetso le boleng ba sehlahisoa, se ka boela sa fa bareki litharollo tsa thepa ea profeshenale.
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