Yintoni itreyi yegrafiti yeMOCVD?

Ukukhula kwe-epitaxial ye-Wafer kufezekiswa ngetekhnoloji ye-metal organic chemical vapor deposition (MOCVD), apho iigesi ezicocekileyo kakhulu zifakwa kwi-reactor kwaye zilinganiswe kakuhle, ukuze zidibane kumaqondo obushushu aphezulu ukuze zibangele ukusebenzisana kweekhemikhali kwaye zifakwe kwi-semiconductor wafers kwiileya ezincinci kakhulu zeathomu ukuze zenze i-epitaxy yezinto kunye ne-compound semiconductors.

Kwizixhobo ze-CVD, i-substrate ayinakubekwa ngqo kwisinyithi okanye kwisiseko sokufakwa kwe-epitaxial, kuba iya kuchaphazeleka zizinto ezininzi. Ke ngoko, i-susceptor okanye itreyi iyafuneka ukuze ibambe i-substrate, ize isebenzise iteknoloji ye-CVD ukwenza ukufakwa kwe-epitaxial kwi-substrate. Le susceptor yi-Isixhobo sokususa igrafiti ye-MOCVD(ekwabizwa ngokubaItreyi yegrafayithi yeMOCVD).

Ulwakhiwo lwayo luboniswe kumfanekiso ongezantsi:

Kutheni i-graphite susceptor ifuna i-CVD coating?

I-graphite susceptor yenye yezona zinto ziphambili kwizixhobo ze-MOCVD. Yinto ethwala kunye neyokufudumeza ye-substrate. Iiparamitha zayo zokusebenza ezifana nokuzinza kobushushu kunye nokufana kobushushu zidlala indima ebalulekileyo kumgangatho wokukhula kwezinto ze-epitaxial, kwaye zimisela ngokuthe ngqo ukufana kunye nobunyulu bezinto zefilimu ezincinci ze-epitaxial. Ke ngoko, umgangatho wayo uchaphazela ngokuthe ngqo ukulungiswa kwee-wafers ze-epitaxial. Kwangaxeshanye, ngokwanda kwenani lokusetyenziswa kunye notshintsho kwiimeko zokusebenza, kulula kakhulu ukuyiguga, iyinto esetyenziswayo. Ukuqhuba kakuhle kobushushu kunye nokuzinza kwe-graphite kuyinika inzuzo enkulu njengenxalenye esisiseko yezixhobo ze-MOCVD.

Nangona kunjalo, ukuba yigraphite ecocekileyo kuphela, kuya kubakho iingxaki ezithile. Kwinkqubo yemveliso, kuya kubakho iigesi ezirhabaxa eziseleyo kunye nezinto eziphilayo zesinyithi, kwaye i-graphite susceptor iya kubola ize iwe, nto leyo enciphisa kakhulu ubomi benkonzo ye-graphite susceptor. Kwangaxeshanye, umgubo we-graphite owelayo uya kubangela ungcoliseko kwi-wafer, ngoko ke ezi ngxaki kufuneka zisonjululwe kwinkqubo yokulungiselela isiseko. Itekhnoloji yokugquma inokubonelela ngokulungiswa komgubo womphezulu, iphucule ukuhanjiswa kobushushu, kwaye ilinganisele ukusasazwa kobushushu, kwaye iye yaba yitekhnoloji ephambili yokusombulula le ngxaki.

Ngokwemeko-bume yokusetyenziswa kunye neemfuno zokusetyenziswa kwesiseko segrafiti, uphahla lomphezulu kufuneka lube neempawu ezilandelayo:

1. Uxinano oluphezulu kunye nokugubungela ngokupheleleyo:Isiseko segrafiti sikwindawo yokusebenza enobushushu obuphezulu kunye nendawo erhabaxa. Umphezulu kufuneka ugqunywe ngokupheleleyo, kwaye uqweqwe kufuneka lube noxinano oluhle ukuze ludlale indima efanelekileyo yokukhusela.

2. Ubume bomphezulu obuhle:Ekubeni isiseko segrafiti esisetyenziselwa ukukhula kwekristale enye sifuna ukuba umphezulu ube tyaba kakhulu, ukuba isiseko sibe tyaba kokuqala kufuneka kugcinwe emva kokuba kulungiswe i-coating, oko kukuthi, umphezulu we-coating kufuneka ufane.

3. Amandla amahle okubopha:Ukunciphisa umahluko kwi-coefficient yokwandiswa kobushushu phakathi kwesiseko segrafiti kunye nezinto zokugquma kunokuphucula ngempumelelo amandla okubopha phakathi kwezi zimbini. Emva kokubona imijikelo yobushushu ephezulu nephantsi, ukugquma akulula ukuqhekeka.

4. Ukuqhuba okuphezulu kobushushu:Ukukhula kweetshiphusi ezikumgangatho ophezulu kufuna isiseko segrafiti ukuze sinike ubushushu obukhawulezayo nobufanayo, ngoko ke izinto zokugquma kufuneka zibe nobushushu obuphezulu.

5. Indawo yokunyibilika ephezulu, ukumelana ne-oxidation yobushushu obuphezulu kunye nokumelana nokugqwala:Ingubo kufuneka ikwazi ukusebenza ngokuzinzileyo kwindawo yokusebenza enobushushu obuphezulu kunye nendawo ekonakalisayo.

Uzinzo lobushushu, ukufana kobushushu kunye nezinye iiparameter zokusebenza kweI-SiC egqunywe yi-graphite susceptorZidlala indima ebalulekileyo kumgangatho wokukhula kwezinto ze-epitaxial, ngoko ke yinxalenye ephambili yezixhobo ze-MOCVD.

Uhlobo lwekristale lwe-β-SiC (3C-SiC) lukhethwa njengengubo. Xa kuthelekiswa nezinye iintlobo zekristale, olu hlobo lwekristale luneempawu ezininzi ezintle ezifana nokuzinza okuhle kwe-thermodynamic, ukumelana ne-oxidation kunye nokumelana nokugqwala. Kwangaxeshanye, lune-thermal conductivity ehambelana ngokusisiseko neye-graphite, ngaloo ndlela lunika isiseko se-graphite iimpawu ezikhethekileyo. Lunokusombulula ngempumelelo ukungaphumeleli kwesiseko se-graphite okubangelwa yi-oxidation yobushushu obuphezulu kunye nokugqwala kunye nokulahleka komgubo ngexesha lokusebenza, kwaye lwenze umphezulu wesiseko se-graphite ube mkhulu, ungabi nazimbobo, umelana nobushushu obuphezulu, ulwa nokugqwala, ulwa nokugqwala kunye nezinye iimpawu, ngaloo ndlela luphucula umgangatho we-crystal epitaxial kunye nobomi benkonzo yesiseko se-graphite (ubomi benkonzo yesiseko se-graphite esifakwe yi-SiC bulinganiswa kwiifurnace).

Ungayikhetha njani itreyi/i-susceptor ye-MOCVD graphite ekwaziyo ukumelana nobushushu obuphezulu kunye nokugqwala?

Xa ukhethaitreyi yegraphite okanye i-susceptor ye-MOCVDekwaziyo ukumelana nokugqwala kumaqondo obushushu aphezulu, ezi zinto zilandelayo kufuneka ziqwalaselwe:

1. Ubunyulu bezinto ezibonakalayo:Izixhobo zegrafiti ezicocekileyo kakhulu zinokumelana ngcono nokugqwala kunye ne-oxidation kumaqondo obushushu aphezulu kwaye zinciphise impembelelo yokungcola kwinkqubo yokubeka.

2. Ubuninzi kunye nokuvuleka kwe-porosity:Iitreyi zegrafiti ezinoxinano oluphezulu kunye ne-porosity ephantsi zinamandla angcono oomatshini kunye nokumelana nokugqwala, kwaye zinokuthintela ngempumelelo ukungena kwegesi kunye nokukhukuliseka kwezinto.

3. Ukuqhuba kobushushu:Itreyi yegrafiti eqhuba ubushushu obuphezulu inceda ukusasaza ubushushu ngokulinganayo, ukunciphisa uxinzelelo lobushushu, kunye nokuphucula uzinzo kunye nobomi benkonzo yezixhobo.

4. Unyango lomphezulu:Iipalethi zegrafiti eziye zaphathwa ngendlela ekhethekileyo kumphezulu, njengokugquma okanye ukugquma, zinokuphucula ngakumbi ukumelana kwazo nokugqwala kunye nokumelana nokuguguleka.

5. Ubungakanani kunye nokuma:Ngokweemfuno ezithile zezixhobo ze-MOCVD, khetha ubungakanani kunye nemilo efanelekileyo ukuqinisekisa ukuba itreyi iyahambelana nezixhobo kunye nokuba kulula ukuyisebenzisa.

6. Udumo lomenzi:Khetha umenzi onegama elihle namava atyebileyo ukuqinisekisa ukuthembeka komgangatho wemveliso kunye nenkonzo yasemva kokuthengisa.

7. Ukusebenza kakuhle kweendleko:Ngokusekelwe ekuhlangabezaneni neemfuno zobugcisa, cinga ngokonga iindleko kwaye ukhethe iimveliso ezinexabiso eliphezulu.

I-VET Energy ngumthengisi we-graphite susceptor ococekileyo kakhulu, sinikezela ngeendidi ezahlukeneyo, kwaye ingasetyenziswa kwizixhobo ze-MOCVD zeempawu ezahlukeneyo, iimodeli kunye neenkcukacha.I-SiC egqunywe yi-graphite susceptorEziveliswe yiVET Energy azinazo iindawo zokunxibelelana ezigqumayo kwaye azinazo iikhonkco ezibuthathaka. Ngokuphathelele ubomi benkonzo, zinokuhlangabezana neemfuno zabathengi abaneemfuno ezahlukeneyo (kuquka ukusetyenziswa kwemimoya equlethe i-chlorine), kwaye abathengi bamkelekile ukuba babonisane kwaye babuze imibuzo.