Yintoni MOCVD graphite itreyi?

Ukukhula kwe-wafer epitaxial kufezekiswa ngeteknoloji ye-metal organic chemical vapor deposition (MOCVD) , apho iigesi ezicocekileyo zitofwa kwi-reactor kwaye zilinganiswe kakuhle, ukuze zihlangane kumaqondo obushushu aphakamileyo ukuze zibangele ukudibana kweekhemikhali kwaye zifakwe kwi-semiconductor wafers kwiileya ze-athom ezibhityileyo kakhulu ukuze zenze i-epitaxy yemathiriyeli ye-epitaxy.

Kwizixhobo ze-CVD, i-substrate ayinakubekwa ngokuthe ngqo kwisinyithi okanye ngokulula kwisiseko se-epitaxial deposition, kuba iya kuchaphazeleka kwizinto ezininzi. Ngoko ke, i-susceptor okanye i-tray iyadingeka ukubamba i-substrate, kwaye emva koko isebenzise iteknoloji ye-CVD ukwenza i-epitaxial deposition kwi-substrate. Le susceptor aMOCVD graphite susceptor(ekwabizwa ngokubaMOCVD itreyi yegraphite).

Ulwakhiwo lwayo luboniswe kumzobo ongezantsi:

Kutheni i-graphite susceptor idinga i-CVD yokwambathisa?

I-graphite susceptor yenye yezinto eziphambili kwizixhobo ze-MOCVD. Ingumthwali kunye nokufudumala kwe-substrate. Iiparamitha zayo zokusebenza ezifana nokuzinza kwe-thermal kunye ne-thermal uniformity idlala indima ecacileyo kumgangatho wokukhula kwezinto ze-epitaxial, kwaye inqume ngokuthe ngqo ukufana kunye nokucoceka kwezinto zefilimu ezinqabileyo ze-epitaxial. Ngoko ke, umgangatho wayo uchaphazela ngokuthe ngqo ukulungiswa kwee-epitaxial wafers. Ngexesha elifanayo, ngokunyuka kwenani lokusetyenziswa kunye nokutshintsha kweemeko zokusebenza, kulula kakhulu ukugqoka kunye nokukrazula, kukutya. Ukuqhuba kakuhle kwe-thermal kunye nokuzinza kwegraphite kukunika inzuzo enkulu njengenxalenye yesiseko sezixhobo ze-MOCVD.

Nangona kunjalo, ukuba yigraphite ecocekileyo kuphela, kuya kubakho iingxaki. Kwinkqubo yokuvelisa, kuya kubakho i-residual corrosive gases kunye ne-metal organic matter, kunye ne-graphite susceptor iya kutshabalalisa kwaye siwe, enciphisa kakhulu ubomi benkonzo ye-graphite susceptor. Ngexesha elifanayo, i-graphite powder ewayo nayo iya kubangela ukungcola kwi-wafer, ngoko ke ezi ngxaki kufuneka zisonjululwe kwinkqubo yokulungiselela isiseko. Itekhnoloji yokwambathisa inokubonelela ngokulungiswa komgubo womphezulu, ukunyusa umgangatho we-thermal conductivity, kunye nokulinganisela ukuhanjiswa kobushushu, kwaye ibe yeyona teknoloji iphambili yokusombulula le ngxaki.

Ngokwemeko yesicelo kunye neemfuno zokusetyenziswa kwesiseko segraphite, ukugquma komhlaba kufuneka kube nezi mpawu zilandelayo:

1. Ukuxinana okuphezulu kunye nokhuseleko olupheleleyo:Isiseko segraphite sikwiqondo lobushushu eliphezulu kunye nendawo yokusebenza eyonakalisayo. Umphezulu kufuneka ugutyungelwe ngokupheleleyo, kwaye ukugquma kufuneka kube nokuxinwa okulungileyo ukuze kudlale indima efanelekileyo yokukhusela.

2. Umphezulu othe tyaba olungileyo:Ekubeni isiseko segraphite esisetyenziselwa ukukhula kwekristale enye ifuna indawo ephakamileyo kakhulu, i-flatness yasekuqaleni yesiseko kufuneka igcinwe emva kokuba i-coating ilungiselelwe, oko kukuthi, indawo yokugubungela kufuneka ifane.

3. Amandla okudibanisa okulungileyo:Ukunciphisa umehluko kwi-coefficient yokwandiswa kwe-thermal phakathi kwesiseko segraphite kunye nezinto zokugubungela kunokuphucula ngokufanelekileyo amandla okudibanisa phakathi kwezi zibini. Emva kokufumana imijikelezo ye-thermal ephezulu kunye nephantsi, i-coating akulula ukuyiqhekeza.

4. I-thermal conductivity ephezulu:Ukukhula komgangatho ophezulu we-chip kufuna isiseko segraphite ukunika ubushushu obukhawulezayo nobufanayo, ngoko ke izinto zokugquma kufuneka zibe ne-thermal conductivity ephezulu.

5. Indawo ephezulu yokunyibilika, ukuxhathisa ubushushu obuphezulu be-oxidation kunye nokumelana nomhlwa:Ingubo kufuneka ikwazi ukusebenza ngokuzinzileyo kwiqondo lokushisa eliphezulu kunye neendawo zokusebenza ezinobungozi.

Uzinzo thermal, ukufana thermal kunye nezinye iiparamitha yokusebenza yeI-SiC coated susceptor yegraphitedlala indima eqinisekileyo kumgangatho wokukhula kwezinto ze-epitaxial, ngoko ke yeyona nto ingundoqo yezixhobo ze-MOCVD.

Ifom ye-crystal ye-β-SiC (3C-SiC) ikhethwe njengengubo. Xa kuthelekiswa nezinye iifom zekristale, le fomu yekristale inoluhlu lweempawu ezigqwesileyo ezifana nokuzinza okuhle kwe-thermodynamic, ukumelana ne-oxidation kunye nokumelana nokugqwala. Ngelo xesha, ine-conductivity ye-thermal ehambelana ngokusisiseko ne-graphite, ngaloo ndlela inika isiseko se-graphite iimpawu ezikhethekileyo. Iyakwazi ukusombulula ngokufanelekileyo ukungaphumeleli kwesiseko segraphite okubangelwa yi-oxidation ephezulu yobushushu kunye nokubola kunye nokulahlekelwa ngumgubo ngexesha lenkonzo, kwaye wenze ubuso besiseko segraphite buxinene, bungabikho, bubushushu obuphezulu, buxhathise ubushushu, buchasene ne-corrosion, i-anti-oxidation kunye nezinye iimpawu, ngaloo ndlela kuphuculwe umgangatho we-crystal epitaxial kunye nobomi benkonzo ye-graphite yesiseko sobomi benkonzo yegrafu iziko).

Ungayikhetha njani i-MOCVD itreyi yegraphite/susceptor ekwaziyo ukumelana nobushushu obuphezulu kunye nokudleka?

Xa ukhetha iitreyi yegraphite okanye i-susceptor ye-MOCVDekwaziyo ukumelana nobushushu obuphezulu, le miba ilandelayo kufuneka iqwalaselwe:

1. Ukucoceka kwezinto:Izinto ezicocekileyo zegraphite zinokuxhathisa ngcono ukubola kunye ne-oxidation kumaqondo obushushu aphezulu kunye nokunciphisa impembelelo yokungcola kwinkqubo yokubeka.

2. Ubuninzi kunye ne-porosity:Iitreyi zegraphite ezinoxinano oluphezulu kunye ne-porosity ephantsi zinamandla angcono omatshini kunye nokumelana nokubola, kwaye inokuthintela ngokufanelekileyo ukungena kwegesi kunye nokukhukuliseka kwezinto.

3. I-Thermal conductivity:I-tray yegraphite ephezulu ye-thermal conductivity inceda ukusabalalisa ukushisa ngokulinganayo, ukunciphisa uxinzelelo lwe-thermal, kunye nokuphucula ukuzinza kunye nobomi benkonzo yezixhobo.

4. Unyango lomphezulu:Iiphalethi zegraphite eziye zafumana unyango olukhethekileyo lomphezulu, njengokwaleka okanye ukugquma, zinokomeleza ngakumbi ukuxhathisa kwazo nokungagugi.

5. Ubungakanani kunye nokumila:Ngokweemfuno ezithile zezixhobo ze-MOCVD, khetha ubungakanani obufanelekileyo kunye nemilo ukuqinisekisa ukuhambelana kwe-tray kunye nezixhobo kunye nokulula kokusebenza.

6. Isidima somvelisi:Khetha umenzi onegama elihle kunye namava atyebileyo ukuqinisekisa ukuthembeka komgangatho wemveliso kunye nenkonzo emva kokuthengisa.

7. Ukusebenza kakuhle kweendleko:Kwisiseko sokuhlangabezana neemfuno zobugcisa, qwalasela ukusebenza kakuhle kweendleko kwaye ukhethe iimveliso ezinexabiso eliphezulu lokusebenza.

I-VET Amandla ngumthengisi we-graphite susceptor ococekileyo, sinikezela ngoluhlu olubanzi lweendidi, kwaye zingasetyenziselwa izixhobo ze-MOCVD zeempawu ezahlukeneyo, iimodeli kunye neenkcukacha. II-SiC coated susceptor yegraphiteeveliswe yi-VET Energy ayinazo iindawo zoqhagamshelwano zokugquma kwaye azikho izixhumanisi ezibuthathaka. Ngokuphathelele ubomi benkonzo, banokuhlangabezana neemfuno zabathengi abaneemfuno ezahlukeneyo (kubandakanywa nokusetyenziswa kwe-atmospheres equkethe i-chlorine), kwaye abathengi bamkelekile ukubonisana kunye nokubuza.