Porous Silicon Carbide SiC Ceramic

Porous Silicon Carbide SiC Ceramic
Porous SiC Ceramic is a high-performance ceramic material with a controllable pore structure, featuring ultra-high purity, high-temperature resistance, thermal shock resistance, and chemical inertness. They are widely used in advanced fields such as semiconductor manufacturing, photovoltaic silicon wafer production, and third-generation semiconductor (SiC/GaN) epitaxial processes.

VET Energy utilizes high-purity SiC powder combined with advanced sintering technology to achieve precise pore size control (0.05–100μm), meeting diverse application requirements for filtration, diffusion, catalysis, and thermal management. It is an ideal choice for the semiconductor and photovoltaic industries to enhance yield rates, reduce contamination, and optimize processes.

Our Core Advantages
✅ Ultra-high purity:
metal impurities <0.5ppm, compliant with SEMI standards, preventing wafer contamination;
✅ High temperature resistance (continuous use at 1600℃):
suitable for high temperature environments such as CVD, diffusion furnaces, and silicon smelting;
✅ Strong thermal shock resistance:
adapts to rapid temperature changes, reducing equipment downtime
✅ Chemical inertness (resistant to acids, alkalis, and molten metals):
resistant to corrosive gases such as HF and Cl₂, with a lifespan far exceeding that of metal filters;
✅ Controlled pore structure (0.05-100um):
supports graded filtration, improving fluid flow efficiency;

Typical Application
1. Semiconductor Manufacturing: CVD/ALD gas filtration, diffusion furnace flow distribution plates, etching exhaust gas treatment, etc.
2. Photovoltaic Industry: Silicon material melting filtration, PERC cell coating masks, etc.
3. Third-Generation Semiconductors (SiC/GaN): Wafer epitaxial pre-treatment.