Isithwali seGraphite senkqubo yePECVD

Inkcazo emfutshane:

Amandla e-VETI-PECVD Graphite Boat yeSolar Panel yinxalenye ephambili eyenzelwe ngokukodwa ukuveliswa kweepaneli zelanga ezisebenzayo. Isetyenziswa kwiinkqubo zePlasma Enhanced Chemical Vapor Deposition (PECVD), le nqanawa yegraphite iqinisekisa ukuphathwa kakuhle kwezinto kunye nokufakwa okufanayo kweefilimu ezincinci kwiiseli zelanga. Yenzelwe ukuchaneka nokuqina, inika amandla okuqhuba ubushushu aphezulu, ukumelana nokugqwala okuphezulu, kunye nongcoliseko oluncinci, oluyimfuneko ekuvelisweni kweepaneli zelanga ezisebenzayo nezisemgangathweni ophezulu.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Amandla e-VETI-PECVD process graphite carrier yinkqubo esetyenziswayo esemgangathweni ophezulu eyenzelwe inkqubo ye-PECVD (plasma enhanced chemical vapor deposition). Le graphite carrier yenziwe ngezinto ze-graphite ezicocekileyo kakhulu, ezinobunzima obuphezulu, ezinokumelana nobushushu obuphezulu, ukumelana nokugqwala, uzinzo olulinganayo kunye nezinye iimpawu, inokubonelela ngeqonga elizinzileyo lenkqubo ye-PECVD, ukuqinisekisa ukufana kunye nokuthamba kwefilimu encinci.

Izithwali zegrafiti zenkqubo yePECVD zineempawu ezilandelayo:

▪ Ubunyulu obuphezulu: ubunyulu obuphantsi kakhulu, ukuphepha ungcoliseko lwefilimu nokuqinisekisa umgangatho wefilimu.

▪ Uxinano oluphezulu: uxinano oluphezulu, amandla aphezulu oomatshini, okwaziyo ukumelana nobushushu obuphezulu kunye noxinzelelo oluphezulu lwe-PECVD.

▪ Uzinzo oluhle lobukhulu: utshintsho oluncinci lobukhulu kubushushu obuphezulu, ukuqinisekisa uzinzo lwenkqubo.

▪ Ukuqhuba kakuhle kobushushu: ukuhambisa ubushushu ngokufanelekileyo ukuthintela ukugqithisa kwe-wafer.

▪ Ukumelana nokugqwala okunamandla: ukukwazi ukumelana nokukhukuliseka kweegesi ezahlukeneyo ezigqwalisayo kunye neplasma.

▪ Inkonzo eyenzelwe wena: abathwali begrafiti bobukhulu obahlukeneyo kunye neemilo banokwenziwa ngokwezifiso ngokweemfuno zabathengi.

Izinto zegrafayithi ezivela kwi-SGL:

Ipharamitha eqhelekileyo: R6510
Isalathiso	Umgangatho wovavanyo	Ixabiso	Iyunithi
Ubungakanani obuqhelekileyo bengqolowa	I-ISO 13320	10	μm
Unizi lolwapho kuyiwa khona	I-DIN IEC 60413/204	1.83	g/cm³
I-Porosity evulekileyo	I-DIN66133	10	%
Ubungakanani bembobo ephakathi	I-DIN66133	1.8	μm
Ukukwazi ukuchacha	I-DIN 51935	0.06	cm²/s
Ubunzima beRockwell HR5/100	I-DIN IEC60413/303	90	HR
Ukumelana nombane okuthe ngqo	I-DIN IEC 60413/402	13	μΩm
Amandla okugobeka	I-DIN IEC 60413/501	60	I-MPa
Amandla oxinzelelo	I-DIN 51910	130	I-MPa
Imodyuli kaYoung	I-DIN 51915	11.5×10³	I-MPa
Ukwandiswa kobushushu (20-200℃)	I-DIN 51909	4.2X10^-6	K^-1
Ukuqhuba kobushushu (20℃)	I-DIN 51908	105	Wm^-1K^-1

Yenzelwe ngokukodwa ukwenziwa kweeseli zelanga ezisebenza kakuhle kakhulu, ixhasa ukusetyenzwa kwe-wafer enkulu ye-G12. Uyilo olulungiselelweyo lwenkampani yokuthwala lunyusa kakhulu imveliso, nto leyo evumela amazinga aphezulu emveliso kunye neendleko zemveliso eziphantsi.

Into	Uhlobo	Inombolo yesithuthi se-wafer
Inqanawa ye-PEVCD Grephite - Uthotho lwe-156	Isikhephe segrephite esingu-156-13	144
	Isikhephe segrephite se-156-19	216
	Isikhephe segrephite se-156-21	240
	Inqanawa yegrafiti ye-156-23	308
Inqanawa ye-PEVCD Grephite - Uthotho lwe-125	Isikhephe segrephite esingu-125-15	196
	Isikhephe segrephite esingu-125-19	252
	Inqanawa ye-grphite eyi-125-21	280