Lesale la Graphite le koahetsoeng ke TaC

Tlhaloso e Khutšoanyane:

VET Energy e shebana le R&D le tlhahiso ea masale a graphite a koahetsoeng ke TaC. Ho sebelisa theknoloji e tsoetseng pele ea CVD, ho etsa hore TaC e be le bohloeki bo phahameng, botenya bo phahameng le botenya bo lekanang, e ka qoba tšilafalo ka katleho, e ka sebetsa ka mokhoa o tsitsitseng mocheso o fetang 2500 ℃, 'me e na le mamello e matla ho mefuta e sa tšoaneng ea khase.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

VET Energy e tsepamisitse maikutlo ho R&D le tlhahiso ea mehele e koahetsoeng ea CVD tantalum carbide (TaC) e nang le ts'ebetso e phahameng, 'me e ikemiselitse ho fana ka litharollo tsa lisebelisoa tsa mantlha bakeng sa liindasteri tsa semiconductor, photovoltaic le mocheso o phahameng. Theknoloji ea rona e ikemetseng e entsoeng ka lik'hemik'hale tsa mouoane (CVD) e etsa "tantalum carbide" e teteaneng le e ts'oanang ka holim'a karoloana ea graphite ka mekhoa e nepahetseng, e ntlafatsa haholo mocheso o phahameng oa sehlahisoa (> 3000 ℃), ho hanyetsa kutu le ho hanyetsa mocheso oa mocheso, ho atolosa bophelo ba tšebeletso ka makhetlo a fetang a 3, le ho fokotsa litšenyehelo tsa bareki.

Melemo ea rona ea tekheniki:
1. Ho hanyetsa mocheso o phahameng oa oxidation
Sebakeng sa moea sa 1200 ℃, sekhahla sa ho eketseha ha boima ba oxidation ke ≤0.05mg/cm²/h, e leng makhetlo a fetang a 3 ho feta bophelo ba ho hanyetsa oxidation ea graphite e tloaelehileng, 'me e loketse maemo a potoloho e phahameng ea mocheso-mohatsela.
2. Ho hanyetsa ho qhibiliha ha silicon / tšepe ea tšepe
Ho roala ha TaC ho kenella ka mokhoa o feteletseng ho litšepe tse kang silicon ea metsi (1600 ℃), aluminium e qhibilihisitsoeng / koporo, joalo-joalo, ho qoba ho hlōleha ha sebopeho sa mehele ea setso ka lebaka la ho kenella ha tšepe, haholo-holo e loketseng bakeng sa li-semiconductors tsa matla le tlhahiso ea semiconductor ea moloko oa boraro.
3. Tšilafalo ea likaroloana tse tlaase haholo
Ts'ebetso ea CVD e fihlela sekhahla sa ho roala> 99.5% le ho hlaka holimo ho Ra≤0.2μm, ho fokotsa kotsi ea ho tšolloa ha likaroloana ho tloha mohloling le ho finyella litlhoko tse thata tsa bohloeki ba 12-inch wafer manufacturin.
4. Taolo e nepahetseng ea boholo
Ho amohela mochine o nepahetseng oa CNC, mamello ea boholo ba graphite substrate ke ± 0.01mm, 'me deformation ka kakaretso ka mor'a ho roala ke <± 5μm, e loketseng ho kenngoa ka likamoreng tsa thepa e nepahetseng haholo.

Tantalum carbide TaC e koahetsoeng ka sekoahelo bakeng sa semiconductor Featured Image

碳化钽涂层物理特性物理特性 Lintho tse bonahalang tsa TaC ho roala
密度/ Ho teteana	14.3 (g/cm³)
比辐射率 / Mosi o kgethehileng	0.3
热膨胀系数 / Coefficient ea katoloso ea mocheso	6.3 10^-6/K
努氏硬度/ Ho thatafala (HK)	2000 HK
电阻 / Khanyetso	1×10^-5 Ohm*cm
热稳定性 / Ho tsitsa ha mocheso	<2500℃
石墨尺寸变化 / Liphetoho tsa boholo ba graphite	-10 ~ 20um
涂层厚度 / Botenya ba ho roala	≥30um boleng bo tloaelehileng (35um±10um)

Ningbo VET Energy Technology Co., Ltd ke khoebo ea theknoloji e phahameng e shebaneng le nts'etsopele le tlhahiso ea lisebelisoa tse tsoetseng pele tsa maemo a holimo, lisebelisoa le theknoloji e kenyelletsang graphite, silicon carbide, ceramics, kalafo ea holim'a metsi joalo ka SiC coating, TaC coating, khalase ea khabone, pyrolytic carbon coating, jj.

Sehlopha sa rona sa botekgeniki se tsoa litsing tse phahameng tsa lipatlisiso tsa lapeng, 'me se thehile mahlale a mangata a nang le tokelo ea ho netefatsa ts'ebetso ea sehlahisoa le boleng, hape se ka fa bareki litharollo tsa thepa ea litsebi.