Mphete ya Graphite Yokutidwa ndi TaC

VET Energy imayang'ana kwambiri pa kafukufuku ndi chitukuko ndi kupanga mphete za graphite zopangidwa ndi CVD tantalum carbide (TaC) zomwe zimakhala ndi magwiridwe antchito apamwamba, ndipo yadzipereka kupereka mayankho ofunikira azinthu zogwiritsidwa ntchito m'mafakitale a semiconductor, photovoltaic ndi kutentha kwambiri. Ukadaulo wathu wodzipangira wokha wa chemical vapor deposition (CVD) umapanga chophimba cha tantalum carbide cholimba komanso chofanana pamwamba pa graphite substrate kudzera munjira zolondola, zomwe zimapangitsa kuti zinthuzo zisamatenthe kwambiri (>3000℃), kukana dzimbiri komanso kukana kutentha, kukulitsa moyo wautumiki ndi nthawi zoposa zitatu, ndikuchepetsa ndalama zomwe makasitomala amawononga.

Ubwino wathu waukadaulo:
1. Kukana kutentha kwambiri kwa okosijeni
Mu mpweya wa 1200℃, kuchuluka kwa okosijeni m'thupi ndi ≤0.05mg/cm²/h, komwe ndi kopitilira katatu kuposa nthawi ya graphite wamba, ndipo ndikoyenera kugwiritsa ntchito nthawi yotenthetsera komanso yozizira kwambiri.
2. Kukana kusungunuka kwa silikoni/chitsulo
Chophimba cha TaC sichili ndi mphamvu kwambiri ku zitsulo monga silicon yamadzimadzi (1600℃), aluminiyamu/mkuwa wosungunuka, ndi zina zotero, zomwe zimapewa kulephera kwa kapangidwe ka mphete zowongolera zachikhalidwe chifukwa cha kulowa kwachitsulo, makamaka koyenera kupanga ma semiconductor amphamvu ndi ma semiconductor a m'badwo wachitatu.
3. Kuipitsidwa kwa tinthu tating'onoting'ono kwambiri
Njira ya CVD imakwaniritsa kuchuluka kwa zokutira kwa >99.5% ndi kuuma kwa pamwamba kwa Ra≤0.2μm, kuchepetsa chiopsezo cha kutayika kwa tinthu kuchokera ku gwero ndikukwaniritsa zofunikira zaukhondo wa 12-inch wafer manufacturin.
4. Kulamulira kukula kolondola
Pogwiritsa ntchito makina opangidwa ndi CNC molondola, kukula kwa graphite substrate ndi ± 0.01mm, ndipo kusintha konse pambuyo popaka utoto ndi <± 5μm, komwe kuli koyenera kuyikidwa m'zipinda za zida zolondola kwambiri.