Impeta ya Gracite Impeta

Ingufu za VET zibanda kuri R&D no gukora umusaruro mwinshi wa CVD tantalum karbide (TaC) ikozweho impeta ya grafite, kandi yiyemeje gutanga ibisubizo byingenzi bikoreshwa mubikoresho bya semiconductor, Photovoltaque nubushyuhe bwo hejuru. Ikoranabuhanga ryacu ryigenga ryigenga ryimyanda (CVD) rigizwe na tantalum karbide yuzuye hejuru yubuso bwa grafitike ikoresheje inzira zisobanutse neza, kuzamura cyane ibicuruzwa birwanya ubushyuhe bwo hejuru (> 3000 ℃), kurwanya ruswa no kurwanya ubushyuhe bwumuriro, byongerera ubuzima serivisi inshuro zirenga 3, kandi bigabanya abakiriya ibiciro byose.

Ibyiza bya tekiniki:
1. Kurwanya ubushyuhe bwinshi
Mu kirere cya 1200 ℃, umuvuduko wo kwiyongera kwa oxyde ni ≤0.05mg / cm² / h, ibyo bikaba bikubye inshuro zirenga 3 ubuzima bwo kurwanya okiside ya grafite isanzwe, kandi birakwiriye ibihe byinshi byo gushyushya-gukonjesha.
2. Kurwanya silicon yashongeshejwe / kwangirika kwicyuma
Ipfunyika rya TaC ntirishobora gukoreshwa cyane mubyuma nka silikoni y'amazi (1600 ℃), aluminiyumu / umuringa ushongeshejwe, nibindi, birinda kunanirwa muburyo bwimpeta ziyobora gakondo bitewe no kwinjira mubyuma, cyane cyane bikwiranye ningufu za semiconductor hamwe nogukora ibisekuruza bya gatatu.
3. Ultra-nkeya yanduye
Inzira ya CVD igera ku gipimo cya 99.5% hamwe nubuso bwa Ra≤0.2μm, bikagabanya ibyago byo kumeneka biva mu isoko kandi byujuje ibyangombwa bisukuye by’isuku rya santimetero 12 za wafer.
4. Kugenzura ingano yubunini
Kwemeza CNC gutunganya neza, kwihanganira ingano ya grafite ya substrate ni 0.01mm, naho guhindura muri rusange nyuma yo gutwikira ni <± 5μm, bikwiriye gushyirwaho mubyumba byibikoresho byuzuye neza.