Impeta ya Graphite itwikiriwe na TaC

VET Energy yibanda ku bushakashatsi n'iterambere no gukora impeta za grafiti zikozwe na CVD tantalum carbide (TaC) zifite imikorere myiza, kandi yiyemeje gutanga ibisubizo by'ingenzi ku nganda za semiconductor, photovoltaic na high temperature. Ikoranabuhanga ryacu ryakozwe ku giti cyaryo rigenga rishyiraho tantalum carbide nini kandi ingana ku buso bwa grafiti binyuze mu nzira nziza, rikongera cyane ubushobozi bwo kurwanya ubushyuhe bwinshi bw'ibicuruzwa (>3000℃), kurwanya ingese no kurwanya ubushyuhe, rikongera igihe cyo gukora inshuro zirenga 3, kandi rigabanya ikiguzi cyuzuye cy'abakiriya.

Ibyiza byacu bya tekiniki:
1. Ubudahangarwa ku bushyuhe bwinshi bwo kugabanya ubushyuhe
Mu kirere cy’ikirere cya 1200℃, igipimo cyo kwiyongera k’uburemere bwa ogisijeni ni ≤0.05mg/cm²/h, bikubye inshuro zirenga eshatu igihe cyo kurwanya ogisijeni ugereranyije na grafiti isanzwe, kandi birakwiriye mu bihe byo gushyushya no gukonjesha inshuro nyinshi.
2. Kurwanya kwangirika kwa silikoni/icyuma gishongeshejwe
Irangi rya TaC ntirikora cyane ku byuma nka silikoni y'amazi (1600℃), aluminiyumu/umuringa ushongeshejwe, nibindi, birinda ko impeta ziyobora zikora nabi bitewe n'uko ibyuma byinjira, cyane cyane bikoreshwa mu byuma bikoresha ingufu n'inganda zikora ibikoresho bya semiconductor byo mu gisekuru cya gatatu.
3. Umwandu muke cyane w'udukoko
Uburyo bwa CVD bugera ku bucucike bwa >99.5% n'ubugari bw'ubuso bwa Ra≤0.2μm, bigabanya ibyago byo gushonga kw'udusimba duturutse aho twaturutse kandi byujuje ibisabwa mu isuku ikomeye ya wafer manufacturin ya santimetero 12.
4. Kugenzura neza ingano
Dukoresheje uburyo bwo gutunganya neza CNC, ingano ya graphite substrate yihanganira ± 0.01mm, kandi imiterere rusange nyuma yo gusiga ni <± 5μm, ibi bikaba bikwiye gushyirwa mu byumba by'ibikoresho bifite ubuhanga bwo hejuru.