Ityhubhu yeNkqubo yoKusasazeka kweSilicon Carbide SiC

Ityhubhu yeNkqubo yoKusasazeka kweSilicon Carbide SiC

Iityhubhu zeSithando soMbane seSilicon Carbide Diffusionzizinto eziphambili ezisetyenziswa kwi-semiconductor, unyango lobushushu obuphezulu, kunye neenkqubo zokulungiselela izinto. Zisetyenziswa kakhulu njengegumbi lokuxhasa kunye nelokusabela kwii-furniture zokusasazwa okanye ii-furniture zokusasazwa, zenza iinkqubo ezifana ne-atmospheric reaction, i-oxidation, i-diffusion, kunye ne-annealing kwiindawo ezinobushushu obuphezulu, ezirhabaxa kakhulu.
I-VET Energy igxile kuyilo kunye nokuveliswa kweetyhubhu ze-silicon carbide (SiC) zokusetyenziswa kwe-semiconductor ezishushu kakhulu nezirhabaxa. Ngezixhobo zemveliso eziphambili kunye netekhnoloji ye-CVD kunye ne-sintering, sinikezela ngeetyhubhu ezizinzo oluhle kakhulu lobushushu, ukumelana ne-oxidation, kunye nobomi benkonzo ende.

Iingenelo zeetyhubhu ze-SIC ze-VET Energy:

Ubunyulu obuphezulu kakhulu:Iveliswe kusetyenziswa inkqubo ekhethekileyo yokusila, ukungcola kwesinyithi okuyingozi (okufana neNa, K, Fe, kunye neAl) kuyancitshiswa kuye kwinqanaba le-ppb.
Ukukhupha igesi kancinci kakhulu:Phantsi kweemeko ezinobushushu obuphezulu, ezine-vacuum ephezulu, ukuphuma kwegesi kuphantsi kakhulu kune-quartz, okuthintela ngempumelelo ukungcoliswa kwegumbi lenkqubo, kuqinisekisa umgangatho wangaphakathi weefilimu ezincinci ezigciniweyo okanye ukukhula kwekristale, kwaye kuphucula kakhulu isivuno semveliso (ingakumbi ebaluleke kakhulu kwi-SiC epitaxy, ukukhula kweGaN, kunye nemveliso ye-silicon ye-single-crystal ephezulu).
Uzinzo lobushushu obuphezulu:Amaqondo obushushu okusebenza ixesha elide adlula i-1600°C (ngaphezulu kakhulu kwinqanaba lokuthamba le-quartz, malunga ne-1200°C) anokwenzeka, kwaye amaqondo obushushu exesha elifutshane anokumelana namaqondo obushushu aphezulu nangakumbi (afana ne-1800°C), ehlangabezana neemfuno zobushushu obuphezulu kakhulu zee-semiconductors zesizukulwana sesithathu kunye neenkqubo zokukhula kwekristale.
Ukumelana nokugqwala kweekhemikhali:Imelana kakhulu neegesi ezirhabaxa kakhulu ezifana ne-HCl, i-Cl₂, kunye ne-HF, kunye nomphunga we-silicon onyibilikisiweyo kunye nesinyithi, igcina ukuqina kwesakhiwo kunye nokugqitywa komphezulu kwiindawo ezintsonkothileyo ezifana ne-CVD, ukusasazeka, i-oxidation, kunye nokugrumba, kunye nobomi obudlula kakhulu obo beetyhubhu ze-quartz furnace.
Ukuqhuba kakuhle kwe-Thermal:Ukuqhuba kwayo ubushushu kukhulu ngokuphindwe kaninzi kune-quartz, nto leyo evumela ukusasazwa kobushushu besithando ngokukhawuleza nangokufanayo kwaye iphucula ukufana kwenkqubo kunye nokuphindaphinda. Oku kubaluleke kakhulu kwi-processing enkulu, ene-multi-wafer (umz., ii-photovoltaic diffusion furnaces kunye nee-MOCVD reactors).
Uzinzo Lwemilinganiselo:I-coefficient yayo ephantsi kakhulu yokwandiswa kobushushu iqinisekisa ukuba ityhubhu yesithando igcina i-geometry ezinzileyo kakhulu nokuba iphantsi kokuguquguquka okuphindaphindiweyo nokukhulu kobushushu, okuthintela ukungaphumeleli kwetywina okanye uxinzelelo olubangelwa kukwanda nokuncipha kobushushu.
Ukuqina:Ubunzima bayo obuphezulu kunye namandla ayo kunika ityhubhu yesithando somlilo iimpawu ezintle kakhulu zoomatshini, nto leyo eyenza ukuba imelane nokuguquguquka kunye nomonakalo.

Isicelo esiqhelekileyo:

Ukuveliswa kweeSemiconductor:Ukukhula kwe-epitaxial ye-SiC/GaN (MOCVD, HTCVD), i-epitaxy esekwe kwi-silicon, i-high-temperature diffusion/oxidation/annealing (RTP), kunye ne-LPCVD.

Ishishini le-Photovoltaic:Ukusasazwa kobushushu obuphezulu (ukusasazwa kwe-phosphorus/boron) kunye nokutsalwa kweeseli zelanga ze-silicon ezikristali.