I-Silicon Carbide SiC Diffusion Process Tube

I-Silicon Carbide SiC Diffusion Process Tube

Amashubhu Esithando Somlilo Esisabalaliswayo Se-Silicon Carbideyizingxenye ezibalulekile ezisetshenziswa kuma-semiconductor, ukwelashwa kokushisa okuphezulu, kanye nezinqubo zokulungiselela izinto. Zisetshenziswa kakhulu njengegumbi lokusekela kanye nelokusabela lama-diffusion furnaces noma ama-oxidation furnaces, enza izinqubo ezifana nokusabela komoya, i-oxidation, i-diffusion, kanye ne-annealing ezindaweni ezishisa kakhulu nezigqwala kakhulu.
I-VET Energy igxile ekwakhiweni nasekukhiqizweni kwamashubhu e-silicon carbide (SiC) ukuze kusetshenziswe ama-semiconductor asezingeni eliphezulu futhi agqwalisayo. Ngezindawo zokukhiqiza ezithuthukisiwe kanye nobuchwepheshe be-CVD kanye ne-sintering obukhethekile, siletha amashubhu anezici ezinhle kakhulu zokuqina kokushisa, ukumelana nokushiswa kwe-oxidation, kanye nokuphila isikhathi eside kwenkonzo.

Izinzuzo zamashubhu e-SIC e-VET Energy:

Ubumsulwa Obuphezulu Kakhulu:Kukhiqizwa kusetshenziswa inqubo ekhethekile yokusila, ukungcola kwensimbi okuyingozi (njenge-Na, K, Fe, kanye ne-Al) kwehliswa kube sezingeni le-ppb.
Ukweqisa Okuphansi Kakhulu:Ngaphansi kwezimo zokushisa okuphezulu, ezine-vacuum ephezulu, ukuphuma kwegesi kuphansi kakhulu kunokwe-quartz, okuvimbela ngempumelelo ukungcoliswa kwegumbi lenqubo, kuqinisekisa ikhwalithi yangaphakathi yamafilimu amancane agciniwe noma ukukhula kwekristalu, futhi kuthuthukisa kakhulu isivuno somkhiqizo (okubaluleke kakhulu ekukhiqizweni kwe-SiC epitaxy, ukukhula kwe-GaN, kanye nokukhiqizwa kwe-silicon eyodwa yekristalu ephezulu).
Ukuzinza Kwezinga Lokushisa Eliphezulu:Amazinga okushisa okusebenza kwesikhathi eside adlula u-1600°C (ngaphezulu kakhulu kwendawo yokuthambisa ye-quartz, cishe u-1200°C) angenzeka, futhi amazinga okushisa esikhashana angamelana namazinga okushisa aphezulu kakhulu (njengo-1800°C), ahlangabezane nezidingo zokushisa eziphakeme kakhulu zama-semiconductor esizukulwane sesithathu kanye nezinqubo zokukhula kwekristalu.
Ukumelana Nokugqwala Kwamakhemikhali:Imelana kakhulu namagesi agqwala kakhulu njenge-HCl, i-Cl₂, ne-HF, kanye ne-silicon encibilikisiwe kanye nomhwamuko wensimbi, igcina ubuqotho besakhiwo kanye nokuphela kwendawo ezindaweni eziyinkimbinkimbi njenge-CVD, ukusabalala, i-oxidation, kanye nokuqopha, isikhathi sokuphila esidlula kakhulu isikhathi samashubhu esithando se-quartz.
Ukushisa Okuhle Kakhulu:Ukushisa kwayo kukhulu kakhulu kune-quartz, okuvumela ukusatshalaliswa kokushisa kwesithando okusheshayo nokufana kakhulu futhi kuthuthukise ukufana kwenqubo kanye nokuphindaphindwa. Lokhu kubaluleke kakhulu ekucubungulweni kwendawo enkulu, okunezinhlayiya eziningi (isb., izithando zokusabalalisa ze-photovoltaic kanye nama-reactor e-MOCVD).
Ukuqina Okulinganayo:I-coefficient yayo ephansi kakhulu yokwanda kokushisa iqinisekisa ukuthi ithubhu lesithando ligcina i-geometry eqinile ngisho noma libhekene nokushintshashintsha okuphindaphindiwe nokukhulu kokushisa, okuvimbela ukwehluleka kokuvala noma ukugxilisa ingqondo okubangelwa ukwanda nokuncipha kokushisa.
Ukuqina:Ubulukhuni bayo obuphezulu kanye namandla ayo kunikeza ithubhu lesithando izakhiwo ezinhle kakhulu zemishini, okwenza imelane nokuguquguquka kanye nomonakalo.

Isicelo Esijwayelekile:

Ukukhiqizwa Kwe-semiconductor:Ukukhula kwe-epitaxial ye-SiC/GaN (MOCVD, HTCVD), i-epitaxy esekelwe ku-silicon, ukusabalala/ukuxhunywa/ukuncishiswa kwezinga lokushisa eliphezulu (RTP), kanye ne-LPCVD.

Imboni ye-Photovoltaic:Ukusabalala kwezinga lokushisa eliphezulu (ukusabalala kwe-phosphorus/boron) kanye nokunamathela kwamaseli elanga e-silicon acwebezelayo.