Umuyoboro w'Inzira yo Gukwirakwiza Karuboni ya SiC ya Silicon

Umuyoboro w'Inzira yo Gukwirakwiza Karuboni ya SiC ya Silicon

Imiyoboro y'ifuru ikwirakwiza karubide ya silikonini ibice by'ingenzi bikoreshwa mu gutunganya ubushyuhe bwinshi, gutunganya ubushyuhe bwinshi, no gutegura ibikoresho. Bikoreshwa cyane cyane nk'icyumba cyo gushyigikira no gusubiza ibikoresho mu itanura rikwirakwiza cyangwa amatanura akoresha ogisijeni, bigakora ibikorwa nko gukora ibintu mu kirere, gukora ogisijeni, gukwirakwiza, no gufunga ahantu hashyuha cyane kandi hangiza cyane.
VET Energy yibanda ku gushushanya no gukora imiyoboro ya silicon carbide (SiC) kugira ngo ikoreshwe mu bushyuhe bwinshi kandi ikoresheje ibyuma bya semiconductor. Dukoresheje ibikoresho bigezweho byo gukora hamwe n'ikoranabuhanga rya CVD n'ikoranabuhanga ryo gutwika, dutanga imiyoboro ifite ubushobozi bwo kudahinduka kw'ubushyuhe, irwanya ogisijeni, kandi imara igihe kirekire.

Ibyiza by'imiyoboro ya SiC ya VET Energy:

Ubuziranenge Buhanitse Cyane:Bikozwe hakoreshejwe uburyo bwihariye bwo gusya, imyanda yangiza icyuma (nka Na, K, Fe, na Al) igabanuka ikagera ku rugero rwa ppb.
Gutesha agaciro gake cyane:Mu gihe cy’ubushyuhe bwinshi kandi gifite imvange nyinshi, imyuka isohoka mu kirere iba iri hasi cyane ugereranyije n’iya quartz, bigatuma habaho kwanduzwa mu cyumba cy’imashini, bigatuma ubwiza bw’imashini zicucitse cyangwa kristu zikura neza, kandi bikongera umusaruro w’ibicuruzwa (cyane cyane ku ikoreshwa rya SiC epitaxy, ikura rya GaN, no gukora silikoni imwe ifite kristalo nyinshi).
Ubudahangarwa bw'ubushyuhe bwinshi:Ubushyuhe bw'igihe kirekire burenze 1600°C (hejuru cyane y'aho koroha kwa quartz, hafi 1200°C) burashoboka, kandi ubushyuhe bw'igihe gito bushobora kwihanganira ubushyuhe bwinshi kurushaho (nk'ubushyuhe bwa 1800°C), bugahura n'ibisabwa ku bushyuhe bwinshi cyane bya semiconductors zo mu gisekuru cya gatatu n'uburyo bwo gukura bwa crystal.
Ubudahangarwa bw'uburozi mu kurwanya ingese:Irwanya cyane imyuka ihumanya cyane nka HCl, Cl₂, na HF, ndetse na silicon na metal vapor, ikomeza imiterere yayo n'ubuso bwayo mu kirere kigoye nka CVD, diffusion, oxidation, na etching, ikaba imara igihe kirekire kirenze kure icy'imiyoboro ya quartz furnace.
Ubushobozi bwiza bwo gutwara ubushyuhe:Uburyo bwo gutwara ubushyuhe bwayo buruta ubwa quartz inshuro nyinshi, bigatuma ubushyuhe bw’itanura bukwirakwira vuba kandi bungana, kandi bunoza uburyo bwo gukora ibintu bumwe no gusubiramo. Ibi ni ingenzi cyane cyane ku gutunganya ahantu hanini, hakoreshejwe wafer nyinshi (urugero: amatanura ya photovoltaic diffusion na MOCVD reactors).
Ihindagurika ry'ibipimo:Ingano yayo yo kwaguka k'ubushyuhe iri hasi cyane ituma umuyoboro w'itanura ugumana imiterere ihamye nubwo waba uhura n'ihindagurika ry'ubushyuhe rikabije, bikarinda ko urufunguzo runanirwa cyangwa imbaraga ziterwa no kwaguka no guhindagurika k'ubushyuhe.
Kuramba:Ubukana bwayo n'imbaraga zayo bitanga imiterere myiza ya mashini y'itanura, bigatuma idahinduka cyangwa ngo yangirike.

Uburyo busanzwe bwo gukoresha:

Gukora ibikoresho bya semiconductor:Iterambere rya SiC/GaN epitaxial (MOCVD, HTCVD), epitaxy ishingiye kuri silicon, ikwirakwizwa ry’ubushyuhe bwinshi/oxidation/annealing (RTP), na LPCVD.

Inganda zikora imashini zikoresha amashanyarazi ya photovoltaic:Gukwirakwira kw'ubushyuhe bwinshi (fosforusi/boron) no gukurura uturemangingo tw'izuba twa silikoni dukozwe muri kristalo.