I-VET Energy Graphite Substrate Wafer Holder ngumthuthi ochanekileyo owenzelwe i-PECVD (i-Plasma Enhanced Chemical Vapor Deposition) inkqubo. Le Graphite Substrate Holder ekumgangatho ophezulu yenziwe ngobunyulu obuphezulu, i-high-density graphite material, enokumelana nobushushu obuphezulu, ukumelana nokugqwala, ukuzinza komda kunye nezinye iimpawu. Inokubonelela ngeqonga lenkxaso elizinzileyo lenkqubo ye-PECVD kwaye iqinisekise ukufana kunye nokunyanzeliswa kwefilimu.
I-VET Energy PECVD inkqubo ye-graphite wafer support table inezi mpawu zilandelayo:
▪Ukucoceka okuphezulu:umxholo wokungcola ophantsi kakhulu, kunqande ukungcoliseka kwefilimu, qinisekisa umgangatho wefilimu.
▪Ukuxinana okuphezulu:ukuxinana okuphezulu, amandla omatshini aphezulu, anokumelana nobushushu obuphezulu kunye noxinzelelo oluphezulu lwe-PECVD bume.
▪Uzinzo olululo lwemilinganiselo:utshintsho oluncinci lwe-dimensional kwiqondo lokushisa eliphezulu, ukuqinisekisa ukuzinza kwenkqubo.
▪I-thermal conductivity egqwesileyo:ngokufanelekileyo ukudlulisa ubushushu ukuthintela ukufudumeza kwewafer.
▪Ukuchasa umhlwa okuqinileyo:inokuxhathisa ukhukuliseko ngeegesi ezonakalisayo ezahlukahlukeneyo kunye neplasma.
▪Inkonzo eyenzelwe wena:iitafile zenkxaso yegraphite yobukhulu obuhlukeneyo kunye neemilo zingenziwa ngokwezifiso ngokweemfuno zabathengi.
Izinto eziluncedo kwimveliso
▪Phucula umgangatho wefilimu:Qinisekisa ukufakwa kwefilimu efanayo kunye nokuphucula umgangatho wefilimu.
▪Yandisa ubomi besixhobo:Ukumelana nokugqwesa okugqwesileyo, ukwandisa ubomi benkonzo yezixhobo ze-PECVD.
▪Nciphisa iindleko zemveliso:Iitreyi zegraphite ezikumgangatho ophezulu zinokucutha izinga lokulahlwa kunye nokunciphisa iindleko zemveliso.
Imathiriyeli yeGrafite evela kwi-SGL:
| Iparamitha eqhelekileyo: R6510 | |||
| Isalathiso | Umgangatho wovavanyo | Ixabiso | Iyunithi |
| Ubungakanani obuphakathi kweenkozo | ISO 13320 | 10 | μm |
| Unizi lolwapho kuyiwa khona | I-DIN IEC 60413/204 | 1.83 | g/cm3 |
| I-porosity evulekile | DIN66133 | 10 | % |
| Ubungakanani bepore obuphakathi | DIN66133 | 1.8 | μm |
| Ukufikeleleka | DIN 51935 | 0.06 | cm²/s |
| Ubunzima be-Rockwell HR5/100 | I-DIN IEC60413/303 | 90 | HR |
| Ukuxhatshazwa kombane okuthe ngqo | I-DIN IEC 60413/402 | 13 | μΩm |
| Amandla e-Flexural | I-DIN IEC 60413/501 | 60 | MPa |
| Amandla acinezelayo | DIN 51910 | 130 | MPa |
| Imodyuli yolutsha | DIN 51915 | 11.5×10³ | MPa |
| Ukwandiswa kweThermal(20-200℃) | DIN 51909 | 4.2X10-6 | K-1 |
| I-Thermal conductivity (20℃) | DIN 51908 | 105 | Wm-1K-1 |
Yenzelwe ngokukodwa ukwenziwa komgangatho ophezulu wokwenziwa kweeseli zelanga, ezixhasa i-G12 ubungakanani obukhulu bokusetyenzwa kwe-wafer. Uyilo oluphuculweyo lomthwali wonyusa kakhulu umthamo, uvumela amazinga esivuno aphezulu kunye neendleko eziphantsi zemveliso.
| Into | Uhlobo | Inombolo yomphathi wewafer |
| PEVCD Grephite iphenyane - The 156 series | 156-13 isikhephe segrephite | 144 |
| 156-19 isikhephe segrephite | 216 | |
| 156-21 isikhephe segrephite | 240 | |
| 156-23 isikhephe segraphite | 308 | |
| PEVCD Grephite iphenyane - The 125 series | 125-15 isikhephe segrephite | 196 |
| 125-19 isikhephe segrephite | 252 | |
| 125-21 isikhephe se-grphite | 280 |
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