Isibambi seGraphite Substrate Wafer sePECVD

Isibambi seWafer esingaphantsi kweGraphite sePECVD Umfanekiso oPhambili

Inkcazo emfutshane:

Isibambi seGraphite Substrate seVET Energy senzelwe ukugcina ulungelelwaniso lwewafer kunye nozinzo kuyo yonke inkqubo yePECVD, ukuthintela ungcoliseko kunye nokunciphisa umngcipheko wokonakala. Isibambi seGraphite Wafer sibonelela ngeqonga elikhuselekileyo nelilinganayo, eliqinisekisa ukuba iiwafers zichatshazelwa ngokulinganayo kwiplasma ukuze zihlale zisemgangathweni ophezulu. Ngenxa yokuqhuba kwayo okuphezulu kobushushu kunye namandla angaqhelekanga, esi sibambi sinceda ukuphucula ukusebenza kakuhle kwenkqubo kunye nokusebenza kwemveliso.

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-VET Energy Graphite Substrate Wafer Holder sisithwali esichanekileyo esenzelwe inkqubo ye-PECVD (Plasma Enhanced Chemical Vapor Deposition). Esi Sithwali seGraphite Substrate esisemgangathweni ophezulu senziwe ngezinto zegraphite ezicocekileyo kakhulu, ezinobunzima obuphezulu, ezinokumelana nobushushu obuphezulu, ukumelana nokugqwala, uzinzo olulinganayo kunye nezinye iimpawu. Sinokubonelela ngeqonga lenkxaso elizinzileyo lenkqubo ye-PECVD kwaye siqinisekise ukufana kunye nokuthamba kokufakwa kwefilimu.

Itheyibhile yenkxaso ye-wafer ye-VET Energy PECVD yenkqubo ye-graphite ineempawu ezilandelayo:

▪Ubunyulu obuphezulu:ukungcola okuphantsi kakhulu, thintela ukungcoliswa kwefilimu, qinisekisa umgangatho wefilimu.

▪Uxinano oluphezulu:uxinano oluphezulu, amandla aphezulu oomatshini, inokumelana nobushushu obuphezulu kunye noxinzelelo oluphezulu lwe-PECVD.

▪Uzinzo oluhle lobukhulu:utshintsho oluncinci olunobukhulu kubushushu obuphezulu, ukuqinisekisa uzinzo lwenkqubo.

▪Ukuqhuba kakuhle kobushushu:ukudlulisa ubushushu ngokufanelekileyo ukuthintela ukugqithisa kakhulu kwe-wafer.

▪Ukumelana nokugqwala okunamandla:inokumelana nokukhukuliseka kweegesi ezahlukeneyo ezibolayo kunye neplasma.

▪Inkonzo eyenzelwe wena:Iitafile zenkxaso yegrafayithi zobukhulu obahlukeneyo kunye neemilo zinokwenziwa ngokwezifiso ngokweemfuno zabathengi.

Iingenelo zeMveliso

▪Phucula umgangatho wefilimu:Qinisekisa ukuba ifilimu igcinwa ngendlela efanayo kwaye uphucule umgangatho wefilimu.

▪Yandisa ubomi bezixhobo:Ukumelana nokugqwala okugqwesileyo, kwandisa ubomi benkonzo yezixhobo zePECVD.

▪Nciphisa iindleko zemveliso:Iitreyi zegrafiti ezisemgangathweni ophezulu zinokunciphisa izinga leenkunkuma kwaye zinciphise iindleko zemveliso.

Izinto zegrafayithi ezivela kwi-SGL:

Ipharamitha eqhelekileyo: R6510
Isalathiso	Umgangatho wovavanyo	Ixabiso	Iyunithi
Ubungakanani obuqhelekileyo bengqolowa	I-ISO 13320	10	μm
Unizi lolwapho kuyiwa khona	I-DIN IEC 60413/204	1.83	g/cm³
I-Porosity evulekileyo	I-DIN66133	10	%
Ubungakanani bembobo ephakathi	I-DIN66133	1.8	μm
Ukukwazi ukuchacha	I-DIN 51935	0.06	cm²/s
Ubunzima beRockwell HR5/100	I-DIN IEC60413/303	90	HR
Ukumelana nombane okuthe ngqo	I-DIN IEC 60413/402	13	μΩm
Amandla okugobeka	I-DIN IEC 60413/501	60	I-MPa
Amandla oxinzelelo	I-DIN 51910	130	I-MPa
Imodyuli kaYoung	I-DIN 51915	11.5×10³	I-MPa
Ukwandiswa kobushushu (20-200℃)	I-DIN 51909	4.2X10^-6	K^-1
Ukuqhuba kobushushu (20℃)	I-DIN 51908	105	Wm^-1K^-1

Yenzelwe ngokukodwa ukwenziwa kweeseli zelanga ezisebenza kakuhle kakhulu, ixhasa ukusetyenzwa kwe-wafer enkulu ye-G12. Uyilo olulungiselelweyo lwenkampani yokuthwala lunyusa kakhulu imveliso, nto leyo evumela amazinga aphezulu emveliso kunye neendleko zemveliso eziphantsi.

Into	Uhlobo	Inombolo yesithuthi se-wafer
Inqanawa ye-PEVCD Grephite - Uthotho lwe-156	Isikhephe segrephite esingu-156-13	144
	Isikhephe segrephite se-156-19	216
	Isikhephe segrephite se-156-21	240
	Inqanawa yegrafiti ye-156-23	308
Inqanawa ye-PEVCD Grephite - Uthotho lwe-125	Isikhephe segrephite esingu-125-15	196
	Isikhephe segrephite esingu-125-19	252
	Inqanawa ye-grphite eyi-125-21	280