I-VET Energy Graphite Substrate Wafer Holder iyisithwali esinembile esenzelwe inqubo ye-PECVD (Plasma Enhanced Chemical Vapor Deposition). Lesi Sibambi se-Graphite Substrate sekhwalithi ephezulu senziwe ngezinto ze-graphite ezihlanzekile kakhulu, ezinokumelana nokushisa okuphezulu, ukumelana nokugqwala, ukuzinza kobukhulu kanye nezinye izici. Singahlinzeka ngeplatifomu yokusekela ezinzile yenqubo ye-PECVD futhi siqinisekise ukufana kanye nokuba bushelelezi kokufakwa kwefilimu.
Ithebula lokusekela le-wafer yenqubo ye-VET Energy PECVD linezici ezilandelayo:
▪Ubumsulwa obuphezulu:okuqukethwe okungcolile okuphansi kakhulu, gwema ukungcoliswa kwefilimu, qinisekisa ikhwalithi yefilimu.
▪Ukuminyana okuphezulu:ukuminyana okuphezulu, amandla aphezulu omshini, ingamelana nokushisa okuphezulu kanye nesimo se-PECVD esinomfutho ophezulu.
▪Ukuzinza okuhle kobukhulu:ushintsho oluncane lobukhulu ekushiseni okuphezulu, okuqinisekisa ukuqina kwenqubo.
▪Ukushisa okuhle kakhulu:dlulisa ukushisa ngempumelelo ukuze kuvinjelwe ukushisa ngokweqile kwe-wafer.
▪Ukumelana nokugqwala okunamandla:ingamelana nokuguguleka kwamagesi ahlukahlukene agqwalisayo kanye ne-plasma.
▪Isevisi eyenziwe ngokwezifiso:Amatafula okusekela i-graphite anobukhulu obuhlukene kanye nezimo angenziwa ngokwezifiso ngokwezidingo zamakhasimende.
Izinzuzo Zomkhiqizo
▪Thuthukisa ikhwalithi yefilimu:Qinisekisa ukuthi ifilimu ifakwa ngendlela efanayo futhi uthuthukise ikhwalithi yefilimu.
▪Yandisa isikhathi sokuphila kwemishini:Ukumelana nokugqwala okuhle kakhulu, kwandisa impilo yesevisi yemishini ye-PECVD.
▪Nciphisa izindleko zokukhiqiza:Amathileyi e-graphite asezingeni eliphezulu anganciphisa izinga lokungcola futhi anciphise izindleko zokukhiqiza.
Izinto ze-graphite ezivela ku-SGL:
| Ipharamitha evamile: R6510 | |||
| Inkomba | Izinga lokuhlola | Inani | Iyunithi |
| Usayizi omaphakathi wokusanhlamvu | I-ISO 13320 | 10 | μm |
| Ubuningi obukhulu | I-DIN IEC 60413/204 | 1.83 | g/cm3 |
| Imbobo evulekile | I-DIN66133 | 10 | % |
| Usayizi wembobo ephakathi | I-DIN66133 | 1.8 | μm |
| Ukuvunyelwa komoya | I-DIN 51935 | 0.06 | cm²/s |
| Ukuqina kweRockwell HR5/100 | I-DIN IEC60413/303 | 90 | HR |
| Ukumelana okuqondile kukagesi | I-DIN IEC 60413/402 | 13 | μΩm |
| Amandla okugobeka | I-DIN IEC 60413/501 | 60 | I-MPa |
| Amandla okucindezela | I-DIN 51910 | 130 | I-MPa |
| I-modulus kaYoung | I-DIN 51915 | 11.5×10³ | I-MPa |
| Ukwanda Okushisayo (20-200℃) | I-DIN 51909 | 4.2X10-6 | K-1 |
| Ukushisa (20℃) | I-DIN 51908 | 105 | Wm-1K-1 |
Yenzelwe ngqo ukukhiqizwa kwamaseli elanga asebenza kahle kakhulu, isekela ukucutshungulwa kwe-wafer enkulu ye-G12. Umklamo wenkampani yokuthwala olungiselelwe kahle ukhulisa kakhulu umkhiqizo, okwenza kube lula ukukhiqizwa okuphezulu kanye nezindleko zokukhiqiza eziphansi.
| Into | Uhlobo | Inombolo yesithwali se-wafer |
| Isikebhe se-PEVCD Grephite - Uchungechunge lwe-156 | Isikebhe samagrephite esingu-156-13 | 144 |
| Isikebhe samagrephite esingu-156-19 | 216 | |
| Isikebhe samagrephite esingu-156-21 | 240 | |
| Isikebhe se-graphite esingu-156-23 | 308 | |
| Isikebhe se-PEVCD Grephite - Uchungechunge lwe-125 | Isikebhe samagrephite esingu-125-15 | 196 |
| Isikebhe samagrephite esingu-125-19 | 252 | |
| Isikebhe se-grphite esingu-125-21 | 280 |
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Ibhulokhi ye-graphite ecindezelwe nge-isostatic ephezulu emsulwa kakhulu ...
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Ukusekelwa kwe-PECVD Graphite Wafer
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Ipuleti le-graphite elihlanzekile kakhulu lokushisa okuphezulu kanye ...
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Ipompo yamanzi ye-furan resin efakwe i-graphite bea ...
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Iphepha le-graphite elinobukhulu obuphezulu, i-graphite eguquguqukayo ...
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Isikebhe se-Graphite Wafer sokufakwa endaweni ethile

