Itreyi yokulayisha yePECVD Itreyi yokubeka iGraphite

Itreyi yokubeka igrafiti yePECVD Umfanekiso obonisiweyo

Inkcazo emfutshane:

Itreyi yokulayisha ye-PECVD ye-VET Energy yenzelwe ukubonelela ngenkxaso ekhuselekileyo nelinganayo kwiiwafers ngexesha lokufakwa, ukuphucula ukuhambelana kunye nomgangatho wenkqubo yokufakwa. Ngenxa yokumelana kwayo nobushushu okugqwesileyo, iGraphite Tray inceda ukugcina imeko-bume elawulwayo ngaphakathi kwamagumbi e-PECVD, ukunciphisa umngcipheko wongcoliseko kunye nokuqinisekisa ukusebenza kakuhle kwenkqubo.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Itreyi yokulayisha yeVET Energy PECVD sisithwali esichanekileyo esenzelwe inkqubo yePECVD (iplasma enhanced chemical vapor deposition). Le treyi yegrafiti yokubeka esemgangathweni ophezulu yenziwe ngezinto zegrafiti ezicocekileyo nezixineneyo. Inokumelana okuhle kakhulu nobushushu obuphezulu, ukumelana nokugqwala, uzinzo olulinganayo kunye nezinye iimpawu. Inokubonelela ngeqonga elizinzileyo lesithwali senkqubo yePECVD kwaye iqinisekise ukufana kunye nokuthamba kwefilimu.

Iitreyi zokulayisha zeVET Energy PECVD zisetyenziswa kakhulu kwi-semiconductor, photovoltaic, LED nakwezinye iindawo. Umzekelo:

▪ I-Semiconductor: Inkqubo ye-PECVD yezinto ze-semiconductor ezifana nee-silicon wafers kunye nee-epitaxial wafers.

▪ I-Photovoltaic: Inkqubo ye-PECVD yeefilimu ezincinci zeeseli zelanga.

▪ I-LED: Inkqubo ye-PECVD yeetships ze-LED.

Iingenelo zeMveliso

▪Phucula umgangatho wefilimu:Qinisekisa ukuba ifilimu igcinwa ngendlela efanayo kwaye uphucule umgangatho wefilimu.

▪Yandisa ubomi bezixhobo:Ukumelana nokugqwala okugqwesileyo, kwandisa ubomi benkonzo yezixhobo zePECVD.

▪Nciphisa iindleko zemveliso:Iitreyi zegrafiti ezisemgangathweni ophezulu zinokunciphisa izinga leenkunkuma kwaye zinciphise iindleko zemveliso.

Izinto zegrafayithi ezivela kwi-SGL:

Ipharamitha eqhelekileyo: R6510
Isalathiso	Umgangatho wovavanyo	Ixabiso	Iyunithi
Ubungakanani obuqhelekileyo bengqolowa	I-ISO 13320	10	μm
Unizi lolwapho kuyiwa khona	I-DIN IEC 60413/204	1.83	g/cm³
I-Porosity evulekileyo	I-DIN66133	10	%
Ubungakanani bembobo ephakathi	I-DIN66133	1.8	μm
Ukukwazi ukuchacha	I-DIN 51935	0.06	cm²/s
Ubunzima beRockwell HR5/100	I-DIN IEC60413/303	90	HR
Ukumelana nombane okuthe ngqo	I-DIN IEC 60413/402	13	μΩm
Amandla okugobeka	I-DIN IEC 60413/501	60	I-MPa
Amandla oxinzelelo	I-DIN 51910	130	I-MPa
Imodyuli kaYoung	I-DIN 51915	11.5×10³	I-MPa
Ukwandiswa kobushushu (20-200℃)	I-DIN 51909	4.2X10^-6	K^-1
Ukuqhuba kobushushu (20℃)	I-DIN 51908	105	Wm^-1K^-1

Yenzelwe ngokukodwa ukwenziwa kweeseli zelanga ezisebenza kakuhle kakhulu, ixhasa ukusetyenzwa kwe-wafer enkulu ye-G12. Uyilo olulungiselelweyo lwenkampani yokuthwala lunyusa kakhulu imveliso, nto leyo evumela amazinga aphezulu emveliso kunye neendleko zemveliso eziphantsi.

Into	Uhlobo	Inombolo yesithuthi se-wafer
Inqanawa ye-PEVCD Grephite - Uthotho lwe-156	Isikhephe segrephite esingu-156-13	144
	Isikhephe segrephite se-156-19	216
	Isikhephe segrephite se-156-21	240
	Inqanawa yegrafiti ye-156-23	308
Inqanawa ye-PEVCD Grephite - Uthotho lwe-125	Isikhephe segrephite esingu-125-15	196
	Isikhephe segrephite esingu-125-19	252
	Inqanawa ye-grphite eyi-125-21	280