Pūwero o te okoHe wāhanga matua tēnei i roto i ngā tukanga tipu epitaxial semiconductor pērā i te MOCVD, MBE, CVD. Ko te nuinga o te wā ka whakamahia hei kawe i ngā anga i roto i ngā rūma tauhohenga pāmahana-tiketike, ā, ka whakarato i tētahi taiao papa wera ōrite, pumau hoki hei whakarite i te whakatakotoranga tika o ngā paparanga epitaxial (pēnei i te GaN, SiC, me ētahi atu). Ko tana mahi matua he whakatutuki i te ōritetanga teitei o te pāmahana mata o te anga mā te whakahaere papa wera tika, kia whakarite ai i te matotoru, te kukū tāpiri, me te ōritetanga o te hanganga tioata o ngā kiriata angiangi epitaxial.
Ka whakamahia e mātou ā mātou hangarau patent hei hanga i tepūwero okohe tino parakore, he ōrite te paninga, he roa te ora mahi, tae atu ki te ātete matū me ngā āhuatanga pumau wera.
Ka whakamahia e VET Energy te karāpeti parakore teitei me te paninga CVD-SiC hei whakarei ake i te pumau matū:
1. Rauemi karapiti tino parakore
Te kawe wera teitei: ko te kawe wera o te karāpeti e toru ngā wā i tō te silicon, ka taea te whakawhiti tere i te wera mai i te pūtake whakamahana ki te papa whakarewa me te whakapoto i te wā whakamahana.
Kaha ā-ringa: Te mātotoru o te karāhe pehanga isostatic ≥ 1.85 g/cm³, ka taea te tu atu i ngā pāmahana teitei i runga ake i te 1200 ℃ me te kore e whakarerekē.
2. Paninga CVD SiC
Ka hangaia he paparanga β-SiC ki runga i te mata o te karāpeti mā te whakatakotoranga kohu matū (CVD), me te parakore o te ≥ 99.99995%, ko te hapa ōrite o te matotoru o te paninga he iti iho i te ±5%, ā, ko te taratara o te mata he iti iho i te Ra0.5um.
3. Whakapai ake i te mahi:
Ātete ki te waikura: ka taea te tu atu i ngā hau waikura nui pēnei i te Cl2, te HCl, me ētahi atu, ka taea te whakaroa i te roanga o te ora o te epitaxy GaN e toru ngā wā i roto i te taiao NH3.
Te pumau o te wera: Ka ōrite te tauwehenga o te whānui wera (4.5 × 10-6/℃) ki te karāpeti hei karo i te pakaru o te paninga i puta mai i ngā piki me ngā heke o te pāmahana.
Te Pakari me te Ātete ki te Pakaru: Ka eke te pakeke o Vickers ki te 28 GPa, he 10 ngā wā teitei ake i te karāpeti, ā, ka taea te whakaiti i te tūponotanga o ngā karawarawa wafer.
| CVD SiC薄膜基本物理性能 Ngā āhuatanga ā-tinana taketake o te CVD SiCpaninga | |
| 性质 / Taonga | 典型数值 / Uara Noa |
| 晶体结构 / Hanganga Karaihe | Wāhanga β FCC多晶，主要为（111）取向 |
| 密度 / Kiato | 3.21 karamu/cm³ |
| 硬度 / Te pakeketanga | 2500 维氏硬度（500g kawenga） |
| 晶粒大小 / Rahi o te Witi | 2~10μm |
| 纯度 / Te Parakore o te Matū | 99.99995% |
| 热容 / Te kaha wera | 640 J·kg-1·K-1 |
| 升华温度 / Te Pāmahana Whakatōtō | 2700℃ |
| 抗弯强度 / Kaha Whakapiko | 415 MPa RT 4-ira |
| 杨氏模量 / Te Tauwehenga o te Young | 430 Gpa 4pt piko, 1300℃ |
| 导热系数 / Te whakamahanalTe kawe i te hiko | 300W·m-1·K-1 |
| 热膨胀系数 / Te Whanuitanga Wera (CTE) | 4.5×10-6K-1 |
He umanga hangarau matatau a Ningbo VET Energy Technology Co., Ltd e arotahi ana ki te whakawhanake me te whakaputa rauemi matatau teitei, tae atu ki ngā rauemi me ngā hangarau tae atu ki te karāpeti, te karāpeti silicon, te uku, te maimoatanga mata pēnei i te paninga SiC, te paninga TaC, te paninga waro karāhe, te paninga waro pyrolytic, me ētahi atu, e whakamahia whānuitia ana ēnei hua i roto i te photovoltaic, te semiconductor, te pūngao hou, te whakarewa, me ētahi atu.
Nō ngā umanga rangahau ā-rohe matua tā mātou tīma hangarau, ā, kua whakawhanakehia e rātou he maha ngā hangarau patent hei whakarite i te mahi me te kounga o ngā hua, ā, ka taea hoki e rātou te whakarato ki ngā kiritaki he otinga rauemi ngaio.
