Chotsukira mbiyandi gawo lofunika kwambiri pakukula kwa epitaxial ya semiconductor monga MOCVD, MBE, CVD. Imagwiritsidwa ntchito makamaka kunyamula ma wafer m'zipinda zochitira kutentha kwambiri komanso kupereka malo ofanana komanso okhazikika a thermal field kuti zitsimikizire kuti zigawo za epitaxial zimayikidwa molondola (monga GaN, SiC, ndi zina zotero). Ntchito yake yayikulu ndikukwaniritsa kutentha kwa pamwamba pa wafer mofanana kwambiri kudzera mu thermal field control yeniyeni, potero kuonetsetsa kuti makulidwe, kuchuluka kwa doping, ndi kapangidwe ka kristalo ka mafilimu opyapyala a epitaxial akufanana.
Timagwiritsa ntchito ukadaulo wathu wokhala ndi patent kuti tipangechotsukira mbiyandi chiyero chapamwamba kwambiri, kufanana kwabwino kwa utoto ndi moyo wabwino kwambiri wautumiki, komanso kukana mankhwala ambiri komanso mphamvu zokhazikika pa kutentha.
VET Energy imagwiritsa ntchito graphite yoyera kwambiri yokhala ndi zokutira za CVD-SiC kuti iwonjezere kukhazikika kwa mankhwala:
1. Zinthu zopangidwa ndi graphite zoyera kwambiri
Kutentha kwambiri: kutentha kwa graphite kumachulukitsa katatu kuposa silicon, komwe kumatha kusamutsa kutentha mwachangu kuchokera ku gwero lotenthetsera kupita ku wafer ndikufupikitsa nthawi yotenthetsera.
Mphamvu ya makina: Kuchuluka kwa graphite yothamanga kwambiri ≥ 1.85 g/cm³, yokhoza kupirira kutentha kwambiri kuposa 1200 ℃ popanda kusintha.
2. Chophimba cha CVD SiC
Gawo la β - SiC limapangidwa pamwamba pa graphite pogwiritsa ntchito mankhwala otulutsa nthunzi (CVD), loyera la ≥ 99.99995%, cholakwika chofanana cha makulidwe ophimba ndi chochepera ± 5%, ndipo kukhwima kwa pamwamba ndi kochepera Ra0.5um.
3. Kuwongolera magwiridwe antchito:
Kukana dzimbiri: imatha kupirira mpweya wochuluka wowononga monga Cl2, HCl, ndi zina zotero, imatha kukulitsa moyo wa GaN epitaxy katatu mu chilengedwe cha NH3.
Kukhazikika kwa kutentha: Kuchuluka kwa kutentha (4.5 × 10-6/℃) kumafanana ndi graphite kuti zisawonongeke chifukwa cha kusinthasintha kwa kutentha.
Kulimba ndi Kukana Kuvala: Kulimba kwa Vickers kumafika pa 28 GPa, komwe ndi kokwera nthawi 10 kuposa graphite ndipo kumatha kuchepetsa chiopsezo cha kukwawa kwa wafer.
| Matenda a mtima (CVD) SiC薄膜基本物理性能 Makhalidwe oyambira a CVD SiCchophimba | |
| 性质 / Katundu | 典型数值 Mtengo Wamba |
| 晶体结构 / Kapangidwe ka Crystal | Gawo la FCC β多晶,主要為(111)取向 |
| 密度 / Kuchulukana | 3.21 g/cm³ |
| 硬度 / Kuuma | 2500 维氏硬度 (500g katundu) |
| 晶粒大小 / Tirigu Waukulu | 2 ~ 10μm |
| 纯度 / Kuyera kwa Mankhwala | 99.99995% |
| 热容 / Kutha Kutentha | 640 J·kg-1·K-1 |
| 升华温度 / Kutentha kwa Sublimation | 2700℃ |
| 抗弯强度 / Mphamvu Yosinthasintha | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt kupindika, 1300℃ |
| 导热系数 / KutenthalKuyendetsa bwino | 300W·m-1·K-1 |
| 热膨胀系数 / Kukulitsa Kutentha (CTE) | 4.5×10-6K-1 |
Ningbo VET Energy Technology Co., Ltd ndi kampani yapamwamba kwambiri yomwe imayang'ana kwambiri pakupanga ndi kupanga zipangizo zapamwamba kwambiri, zipangizo ndi ukadaulo kuphatikizapo graphite, silicon carbide, ziwiya zadothi, mankhwala a pamwamba monga SiC ❖ kuyanika, TaC ❖ kuyanika, galasi carbon ❖ kuyanika, pyrolytic carbon ❖ kuyanika, ndi zina zotero, zinthuzi zimagwiritsidwa ntchito kwambiri mu photovoltaic, semiconductor, new energy, metallurgy, etc.
Gulu lathu laukadaulo limachokera ku mabungwe apamwamba ofufuza mdziko muno, ndipo lapanga ukadaulo wambiri wokhala ndi patent kuti zitsimikizire kuti malonda amagwira ntchito bwino komanso ali bwino, lingathenso kupatsa makasitomala mayankho aukadaulo.
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