Mgolo susceptorndi gawo lalikulu mu semiconductor epitaxial kukula njira monga MOCVD, MBE, CVD. Amagwiritsidwa ntchito kwambiri kunyamula zowotcha m'zipinda zomwe zimatentha kwambiri ndikupatsanso malo otenthetsera komanso okhazikika kuti atsimikizire kuyika bwino kwa zigawo za epitaxial (monga GaN, SiC, etc.). Ntchito yake yayikulu ndikukwaniritsa kutentha kwapamwamba kwambiri kwa kutentha kwapamtunda kudzera muulamuliro wokhazikika wamafuta, potero kuonetsetsa makulidwe, kuchuluka kwa ma doping, komanso mawonekedwe a kristalo amafilimu oonda a epitaxial.
Timagwiritsa ntchito ukadaulo wathu wapatent kupangambiya susceptoryokhala ndi chiyero chapamwamba kwambiri, ❖ kuyanika kwabwino komanso moyo wabwino kwambiri wautumiki, komanso kukana kwamphamvu kwamankhwala komanso kukhazikika kwamafuta.
VET Energy imagwiritsa ntchito graphite yoyera kwambiri yokhala ndi zokutira za CVD-SiC kuti zithandizire kukhazikika kwamankhwala:
1. Kuyeretsa kwakukulu kwa graphite zakuthupi
High matenthedwe madutsidwe: matenthedwe madutsidwe wa graphite ndi katatu kuposa silicon, amene mofulumira kusamutsa kutentha gwero Kutentha gwero lopyapyala ndi kufupikitsa Kutentha nthawi.
Zimango mphamvu: Isostatic kuthamanga graphite kachulukidwe ≥ 1.85 g/cm ³, wokhoza kupirira kutentha pamwamba 1200 ℃ popanda mapindikidwe.
2. Kupaka kwa CVD SiC
A β - SiC wosanjikiza amapangidwa pamwamba pa graphite ndi mankhwala nthunzi mafunsidwe (CVD), ndi chiyero cha ≥ 99.99995%, yunifolomu cholakwika ❖ kuyanika makulidwe ndi zosakwana ± 5%, ndipo pamwamba roughness ndi zosakwana Ra0.5um.
3. Kuwongolera magwiridwe antchito:
Kukana kwa dzimbiri: Kumatha kupirira mpweya wambiri wowononga monga Cl2, HCl, ndi zina zotero, zimatha kukulitsa moyo wa GaN epitaxy katatu m'malo a NH3.
Kukhazikika kwamafuta: The coefficient of thermal expansion (4.5 × 10-6/℃) imagwirizana ndi graphite kupewa kupaka utoto chifukwa cha kusinthasintha kwa kutentha.
Kuuma ndi Kuvala Kukaniza: Kuuma kwa Vickers kumafika ku 28 GPa, komwe kuli kokwera ka 10 kuposa graphite ndipo kungachepetse chiopsezo cha zokopa za wafer.
| CVD SiC薄膜基本物理性能 Zida zoyambira za CVD SiCzokutira | |
| 性质 / Katundu | 典型数值 / Mtengo Wofanana |
| 晶体结构 / Kapangidwe ka Crystal | FCC β gawo多晶,主要為(111)取向 |
| 密度 / Kuchulukana | 3.21g/cm³ |
| 硬度 / Kuuma | 2500 维氏硬度 (500g katundu) |
| 晶粒大小 / Mbewu SiZe | 2 ~ 10μm |
| 纯度 / Chemical Purity | 99.99995% |
| 热容 / Kutentha Kwambiri | 640 jkg-1·K-1 |
| 升华温度 / Sublimation Kutentha | 2700 ℃ |
| 抗弯强度 / Flexural Mphamvu | 415 MPa RT 4-mfundo |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| 导热系数 / ThermalConductivity | 300Wm-1·K-1 |
| 热膨胀系数 Kukula kwa Matenthedwe (CTE) | 4.5 × 10-6K-1 |
Ningbo VET Energy Technology Co., Ltd ndi ogwira ntchito zamakono moganizira za chitukuko ndi kupanga zipangizo apamwamba-mapeto, zipangizo ndi luso kuphatikizapo graphite, pakachitsulo carbide, ziwiya zadothi, mankhwala pamwamba ngati ❖ kuyanika SiC, TaC ❖ kuyanika, magalasi mpweya ❖ kuyanika, pyrolytic mpweya ❖ kuyanika, etc., mankhwala amenewa chimagwiritsidwa ntchito photovoltaic, semiconductor watsopano mphamvu, zitsulo.
Gulu lathu laukadaulo limachokera ku mabungwe apamwamba ofufuza zapakhomo, ndipo apanga matekinoloje angapo ovomerezeka kuti awonetsetse kuti zinthu zikuyenda bwino komanso zabwino, zitha kupatsanso makasitomala mayankho aukadaulo.
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