ihe na-egbochi gbọmgbọmbụ isi ihe dị mkpa na usoro uto epitaxial semiconductor dịka MOCVD, MBE, CVD. A na-ejikarị ya ebu wafers n'ime ụlọ mmeghachi omume okpomọkụ dị elu ma na-enye gburugburu ebe okpomọkụ dị otu ma kwụsie ike iji hụ na edobere akwa epitaxial nke ọma (dịka GaN, SiC, wdg). Ọrụ ya bụ ime ka okpomọkụ elu wafer dị elu site na njikwa ọkụ kpọmkwem, si otú a na-ahụ na ọkpụrụkpụ, ntinye doping, na nhazi kristal bụ otu ihe nkiri dị gịrịgịrị epitaxial.
Anyị na-eji teknụzụ patent anyị emepụta iheihe na-egbochi gbọmgbọmnwere ịdị ọcha dị elu nke ukwuu, ịdị mma nke mkpuchi na ndụ ọrụ dị mma, yana iguzogide kemịkalụ dị elu na ihe ndị na-eme ka okpomọkụ sie ike.
VET Energy na-eji graphite dị ọcha nke ukwuu yana mkpuchi CVD-SiC iji mee ka nkwụsi ike kemịkalụ dịkwuo mma:
1. Ihe dị ọcha nke graphite
Oke ike okpomọkụ: ike okpomọkụ nke graphite dị okpukpu atọ karịa nke silicon, nke nwere ike ibufe okpomọkụ ngwa ngwa site na isi iyi ọkụ gaa na wafer ma belata oge okpomọkụ.
Ike igwe: Njupụta graphite nrụgide Isostatic ≥ 1.85 g/cm³, nke nwere ike iguzogide okpomọkụ dị elu karịa 1200 ℃ na-enweghị mgbanwe.
2. mkpuchi CVD SiC
A na-emepụta oyi akwa β-SiC n'elu graphite site na ihe e ji emepụta anwụrụ ọkụ kemịkalụ (CVD), nke dị ọcha nke ≥ 99.99995%, njehie nhata nke ọkpụrụkpụ mkpuchi ahụ erughị ±5%, na oke iru ala ahụ erughị Ra0.5um.
3. Mmezi arụmọrụ:
Nguzogide nrụrụ aka: nwere ike iguzogide nnukwu gas ndị na-emebi emebi dịka Cl2, HCl, wdg, nwere ike ịgbatị ndụ GaN epitaxy ugboro atọ na gburugburu NH3.
Nkwụsi ike nke okpomọkụ: Ọnụọgụ nke mgbasawanye okpomọkụ (4.5 × 10-6/℃) na-adakọ na graphite iji zere mgbawa mkpuchi nke mgbanwe okpomọkụ kpatara.
Ike na Mgbochi Iyi: Ike Vickers ruru 28 GPa, nke dị okpukpu iri karịa graphite ma nwee ike ibelata ihe egwu nke ịkpụcha wafer.
| CVD SiC薄膜基本物理性能 Njirimara anụ ahụ bụ isi nke CVD SiCmkpuchi | |
| 性质 / Ihe onwunwe | 典型数值 / Uru nkịtị |
| 晶体结构 / Nhazi kristal | FCC β nkebi多晶，主要为（111) 取向 |
| 密度 / Njupụta | 3.21 g/cm³ |
| 硬度 / Ike siri ike | 2500 维氏硬度： (ibu 500g) |
| 晶粒大小 / SiZe ọka | 2 ~ 10μm |
| 纯度 / Ịdị ọcha nke kemịkalụ | 99.99995% |
| 热容 / Ike Okpomọkụ | 640 J·kg-1·K-1 |
| 升华温度 / Okpomọkụ Sublimation | 2700℃ |
| 抗弯强度 / Ike nke Flexural | 415 MPa RT isi ihe anọ |
| 杨氏模量 / Modulu Young | 430 GPA 4pt gbagọrọ agbagọ, 1300℃ |
| 导热系数 / ThermalNhazigharị | 300W·m-1·K-1 |
| 热膨胀系数 / Mgbasawanye Okpomọkụ (CTE) | 4.5 × 10-6K-1 |
Ningbo VET Energy Technology Co., Ltd bụ ụlọ ọrụ teknụzụ dị elu nke na-elekwasị anya na mmepe na mmepụta nke ihe ndị dị elu, ihe na teknụzụ gụnyere graphite, silicon carbide, seramiiki, ọgwụgwọ elu dị ka mkpuchi SiC, mkpuchi TaC, mkpuchi carbon iko, mkpuchi carbon pyrolytic, wdg. A na-eji ngwaahịa ndị a eme ihe n'ọtụtụ ebe na fotovoltaic, semiconductor, ike ọhụrụ, metallurgy, wdg.
Ndị otu teknụzụ anyị sitere na ụlọ ọrụ nyocha kacha elu n'ime obodo, ha emepụtakwala ọtụtụ teknụzụ patented iji hụ na ngwaahịa na-arụ ọrụ nke ọma, ha nwekwara ike inye ndị ahịa ihe ngwọta ọkachamara.
