Ahaziri SiC mkpuchi Barrel Susceptor

Susceptor Barrelbụ akụkụ bụ isi na usoro uto epitaxial semiconductor dị ka MOCVD, MBE, CVD. A na-ejikarị ya ebu wafers n'ime ụlọ mmeghachi omume na-ekpo ọkụ na-ekpo ọkụ ma na-enye ebe obibi okpomọkụ na-edozi ahụ ma kwụsie ike iji hụ na ntinye nke epitaxial layers (dị ka GaN, SiC, wdg). Ọrụ ya bụ isi bụ iji nweta ịdị n'otu nke okpomọkụ dị elu site na njikwa ọkụ ziri ezi, si otú ahụ na-ahụ na ọkpụrụkpụ, itinye uche doping, na nhazi kristal ịdị n'otu nke ihe nkiri epitaxial.

Anyị na-eji teknụzụ patent anyị eme ihesusceptor gbọmgbọmna ịdị ọcha dị oke elu, mkpuchi mkpuchi dị mma na ndụ ọrụ magburu onwe ya, yana nnukwu nguzogide kemịkalụ na ihe nkwụsi ike ọkụ.

VET Energy na-eji graphite dị ọcha na mkpuchi CVD-SiC kwalite nkwụsi ike kemịkalụ:

1. Akwa graphite dị ọcha
Igwe ọkụ ọkụ dị elu: conductivity thermal conductivity nke graphite bụ okpukpu atọ nke silicon, nke nwere ike ịnyefe ọkụ ngwa ngwa site na isi iyi ọkụ na wafer ma belata oge kpo oku.
Mechanical ike: Isostatic mgbali graphite njupụta ≥ 1.85 g / cm ³, ike iguzogide elu okpomọkụ n'elu 1200 ℃ na-enweghị deformation.

2. CVD SiC mkpuchi
A β-SiC oyi akwa kpụrụ n'elu graphite site chemical vapor deposition (CVD), na ịdị ọcha nke ≥ 99.99995%, uniformity njehie nke mkpuchi ọkpụrụkpụ bụ ihe na-erughị ± 5%, na elu roughness bụ ihe na-erughị Ra0.5um.

3. Mmelite arụmọrụ:
Nguzogide corrosion: nwere ike iguzogide ikuku na-emebi emebi dị ka Cl2, HCl, wdg, nwere ike ịgbatị ndụ GaN epitaxy ugboro atọ na gburugburu NH3.
Nkwụsi ike nke okpomọkụ: ọnụọgụ nke mgbasawanye okpomọkụ (4.5 × 10-6 / ℃) dakọtara graphite iji zere mkpuchi mkpuchi nke mgbanwe okpomọkụ kpatara.
Isi ike na iyi Nguzogide: Ike siri ike nke Vickers ruru 28GPa, nke dị okpukpu iri karịa graphite ma nwee ike ibelata ihe ize ndụ nke nchapu wafer.