Isifudumezi se-Ceramic Wafer Heater AlN Alumina Heating Element

Isifudumezi se-Ceramic Wafer Heater AlN Alumina Heating Element
Kwimveliso ye-semiconductor, ii-wafers kufuneka zicutshungulwe kwiinkqubo ezahlukeneyo, ezinje ngokufakwa kwefilimu encinci, ukukrola, njl. Kwezi linki, ii-wafers kufuneka zifudunyezwe kubushushu obuthile, kwaye kukho iimfuno ezingqongqo zobushushu, kuba ukufana kobushushu kunempembelelo ebaluleke kakhulu kwimveliso, kwaye izinto zokufudumeza azinamsebenzi.

Isifudumezi seseramikhiIsetyenziswa ngqo kwigumbi lenkqubo kwaye idibana ngqo ne-wafer. Ayithwali nje kuphela i-wafer, kodwa ikwaqinisekisa ukuba i-wafer ifumana ubushushu benkqubo obuzinzileyo nobufanayo. Zizinto ezibalulekileyo kwizixhobo ze-semiconductor thin film deposition!

Isifudumezi seseramikhi siquka isiseko seseramikhi esixhasa i-wafer kunye nomzimba oxhasayo osi-cylindrical kwicala elingasemva elixhasayo. Ukongeza kwi-resistance element (umaleko wokufudumeza) wokufudumeza, kukwakho nee-electrode zerediyo (umaleko we-RF) ngaphakathi okanye kumphezulu wesiseko seseramikhi. Ukuze kufezekiswe ukufudumeza nokupholisa ngokukhawuleza, ubukhulu besiseko seseramikhi kufuneka bube buncinci, kodwa buncinci kakhulu buya kunciphisa ukuqina.

Inkxaso yeheater yeseramikhi ngokubanzi yenziwe ngezinto zeseramikhi ezine-coefficient yokwandisa ubushushu efana neyesiseko. Iheater isebenzisa isakhiwo esahlukileyo se-shaft joint bottom ukukhusela ii-terminals kunye nee-wire kwimiphumo ye-plasma kunye neegesi zekhemikhali ezirhabaxa. Inkxaso ixhotyiswe nge-inlet yegesi yokudlulisa ubushushu kunye nombhobho wokuphuma ukuqinisekisa ubushushu obufanayo beheater. Isiseko kunye nenkxaso zibotshelelwe ngeekhemikhali ngomaleko wokubopha.

Isifudumezi seseramikhi singenziwa ngeeseramikhi ezifana ne-aluminium nitride (AlN), i-silicon nitride (Si3N4), kunye ne-alumina (Al2O3). Phakathi kwazo, i-AlN yeyona ndlela ilungileyo kwizifudumezi zeseramikhi. Xa kuthelekiswa nezinye izinto, iseramikhi ye-VET Energy's AlN ineempawu ezilandelayo:
(1) Ukuqhuba kakuhle kobushushu;
(2) I-coefficient yokwandiswa kobushushu ehambelana nezinto ze-silicon ze-semiconductor;
(3) Iipropati ezilungileyo zoomatshini, ukumelana nokuguguleka okugqwesileyo, kunye neepropati ezipheleleyo zoomatshini zingcono kune-beryllium oxide kwaye zilingana ne-aluminium oxide;
(4) Iipropati zombane ezigqibeleleyo, ubushushu bombane obuhle kakhulu kunye nokulahleka okuphantsi kwe-dielectric;
(5) Ayinabungozi kwaye inobuhlobo nokusingqongileyo.